| Mfr. #: | STL23NM60ND |
|---|---|
| Hersteller: | STMicroelectronics |
| Beschreibung: | MOSFET N-CH 600V 19.5A POWERFLAT |
| Lebenszyklus: | Neu von diesem Hersteller. |
| Datenblatt: | STL23NM60ND Datenblatt |
Product belongs to the N-channel MDmesh series. Reel is the packaging method for this product SMD/SMT Mounting-Style PowerFlat-8 Si is the technology used. Number of channels: 1 Channel Transistor type: 1 N-Channel Power-off control: 3 W This product has a 40 ns of 16 ns. This product has a 45 ns of 16 ns. This product's 25 V. The ID of continuous drain current is 19.5 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 600 V. This product has a 4 V Vgs-th gate-source threshold voltage for efficient power management. The 150 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. Qg-Gate-Charge is 70 nC.
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
STL23NM60ND Specifications
A: Is the cutoff frequency of the product Series?
Q: Yes, the product's Series is indeed N-channel MDmesh
A: Is the cutoff frequency of the product Packaging?
Q: Yes, the product's Packaging is indeed Reel
A: What is the Mounting-Style of the product?
Q: The Mounting-Style of the product is SMD/SMT.
A: What is the Package-Case of the product?
Q: The Package-Case of the product is PowerFlat-8.
A: Is the cutoff frequency of the product Technology?
Q: Yes, the product's Technology is indeed Si
A: Is the cutoff frequency of the product Number-of-Channels?
Q: Yes, the product's Number-of-Channels is indeed 1 Channel
A: What is the Transistor-Type of the product?
Q: The Transistor-Type of the product is 1 N-Channel.
A: What is the Pd-Power-Dissipation of the product?
Q: The Pd-Power-Dissipation of the product is 3 W.
A: At what frequency does the Fall-Time?
Q: The product Fall-Time is 40 ns.
A: Is the cutoff frequency of the product Rise-Time?
Q: Yes, the product's Rise-Time is indeed 45 ns
A: At what frequency does the Vgs-Gate-Source-Voltage?
Q: The product Vgs-Gate-Source-Voltage is 25 V.
A: At what frequency does the Id-Continuous-Drain-Current?
Q: The product Id-Continuous-Drain-Current is 19.5 A.
A: At what frequency does the Vds-Drain-Source-Breakdown-Voltage?
Q: The product Vds-Drain-Source-Breakdown-Voltage is 600 V.
A: What is the Vgs-th-Gate-Source-Threshold-Voltage of the product?
Q: The Vgs-th-Gate-Source-Threshold-Voltage of the product is 4 V.
A: What is the Rds-On-Drain-Source-Resistance of the product?
Q: The Rds-On-Drain-Source-Resistance of the product is 150 mOhms.
A: At what frequency does the Transistor-Polarity?
Q: The product Transistor-Polarity is N-Channel.
A: What is the Qg-Gate-Charge of the product?
Q: The Qg-Gate-Charge of the product is 70 nC.