| Mfr. #: | STL70N10F3 |
|---|---|
| Hersteller: | STMicroelectronics |
| Beschreibung: | IGBT Transistors MOSFET N-Ch 100V 0.0065 Ohm 16A STripFET III MOS |
| Lebenszyklus: | Neu von diesem Hersteller. |
| Datenblatt: | STL70N10F3 Datenblatt |
Product belongs to the STL70N10F3 series. Reel is the packaging method for this product SMD/SMT Mounting-Style PowerFlat-8 Si is the technology used. Power-off control: 136 W This product has a 5.7 ns of 16 ns. This product has a 11 ns of 16 ns. The ID of continuous drain current is 16 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 100 V. This product has a 4 V Vgs-th gate-source threshold voltage for efficient power management. The 8.4 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 43 ns This product has a 17 ns. Qg-Gate-Charge is 56 nC. This product operates in Enhancement channel mode for optimal performance.
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
STL70N10F3 Specifications
A: At what frequency does the Series?
Q: The product Series is STL70N10F3.
A: What is the Packaging of the product?
Q: The Packaging of the product is Reel.
A: Is the cutoff frequency of the product Mounting-Style?
Q: Yes, the product's Mounting-Style is indeed SMD/SMT
A: What is the Package-Case of the product?
Q: The Package-Case of the product is PowerFlat-8.
A: What is the Technology of the product?
Q: The Technology of the product is Si.
A: What is the Pd-Power-Dissipation of the product?
Q: The Pd-Power-Dissipation of the product is 136 W.
A: What is the Fall-Time of the product?
Q: The Fall-Time of the product is 5.7 ns.
A: Is the cutoff frequency of the product Rise-Time?
Q: Yes, the product's Rise-Time is indeed 11 ns
A: At what frequency does the Id-Continuous-Drain-Current?
Q: The product Id-Continuous-Drain-Current is 16 A.
A: At what frequency does the Vds-Drain-Source-Breakdown-Voltage?
Q: The product Vds-Drain-Source-Breakdown-Voltage is 100 V.
A: What is the Vgs-th-Gate-Source-Threshold-Voltage of the product?
Q: The Vgs-th-Gate-Source-Threshold-Voltage of the product is 4 V.
A: Is the cutoff frequency of the product Rds-On-Drain-Source-Resistance?
Q: Yes, the product's Rds-On-Drain-Source-Resistance is indeed 8.4 mOhms
A: Is the cutoff frequency of the product Transistor-Polarity?
Q: Yes, the product's Transistor-Polarity is indeed N-Channel
A: What is the Typical-Turn-Off-Delay-Time of the product?
Q: The Typical-Turn-Off-Delay-Time of the product is 43 ns.
A: What is the Typical-Turn-On-Delay-Time of the product?
Q: The Typical-Turn-On-Delay-Time of the product is 17 ns.
A: Is the cutoff frequency of the product Qg-Gate-Charge?
Q: Yes, the product's Qg-Gate-Charge is indeed 56 nC
A: Is the cutoff frequency of the product Channel-Mode?
Q: Yes, the product's Channel-Mode is indeed Enhancement