STP16NF06L

STP16NF06L Overview

Product belongs to the STripFET II series. Tube is the packaging method for this product Weight of 0.011640 oz Through Hole Mounting-Style TO-220-3 Si is the technology used. Operational temperature range: -55°C ~ 175°C (TJ) Through Hole mounting type Number of channels: 1 Channel Supplier device package: TO-220AB Configuration Single This product uses an MOSFET N-Channel, Metal Oxide FET-Type transistor. Transistor type: 1 N-Channel 60V This product has an 345pF @ 25V value of 300pF @ 25V. This product's Standard. 16A (Tc) continuous drain-ID current at 25°C; This product has an 90 mOhm @ 8A, 10V of 12 Ohm @ 150mA, 0V. Power-off control: 45 W Maximum operating temperature of + 175 C Minimum operating temperature: - 55 C This product has a 12.5 ns of 16 ns. This product has a 37 ns of 16 ns. This product's 16 V. The ID of continuous drain current is 16 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 60 V. The 80 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 20 ns This product has a 10 ns. This product features a 17 S of 500 S for high performance. This product operates in Enhancement channel mode for optimal performance.

STP16NF06L Image

STP16NF06L Specifications

• Manufacturer ST
• Product Category FETs - Single
• Series STripFET II
• Packaging Tube
• Unit-Weight 0.011640 oz
• Mounting-Style Through Hole
• Package-Case TO-220-3
• Technology Si
• Operating-Temperature -55°C ~ 175°C (TJ)
• Mounting-Type Through Hole
• Number-of-Channels 1 Channel
• Supplier-Device-Package TO-220AB
• Configuration Single
• FET-Type MOSFET N-Channel, Metal Oxide
• Power-Max 45W
• Transistor-Type 1 N-Channel
• Drain-to-Source-Voltage-Vdss 60V
• Input-Capacitance-Ciss-Vds 345pF @ 25V
• FET-Feature Standard
• Current-Continuous-Drain-Id-25°C 16A (Tc)
• Rds-On-Max-Id-Vgs 90 mOhm @ 8A, 10V
• Vgs-th-Max-Id 2.5V @ 250μA
• Gate-Charge-Qg-Vgs 10nC @ 5V
• Pd-Power-Dissipation 45 W
• Maximum-Operating-Temperature + 175 C
• Minimum-Operating-Temperature - 55 C
• Fall-Time 12.5 ns
• Rise-Time 37 ns
• Vgs-Gate-Source-Voltage 16 V
• Id-Continuous-Drain-Current 16 A
• Vds-Drain-Source-Breakdown-Voltage 60 V
• Rds-On-Drain-Source-Resistance 80 mOhms
• Transistor-Polarity N-Channel
• Typical-Turn-Off-Delay-Time 20 ns
• Typical-Turn-On-Delay-Time 10 ns
• Forward-Transconductance-Min 17 S
• Channel-Mode Enhancement

STP16NF06L FAQ

• A: What is the Series of the product?

  Q: The Series of the product is STripFET II.

• A: At what frequency does the Packaging?

  Q: The product Packaging is Tube.

• A: Is the cutoff frequency of the product Unit-Weight?

  Q: Yes, the product's Unit-Weight is indeed 0.011640 oz

• A: What is the Mounting-Style of the product?

  Q: The Mounting-Style of the product is Through Hole.

• A: What is the Package-Case of the product?

  Q: The Package-Case of the product is TO-220-3.

• A: Is the cutoff frequency of the product Technology?

  Q: Yes, the product's Technology is indeed Si

• A: What is the Operating-Temperature of the product?

  Q: The Operating-Temperature of the product is -55°C ~ 175°C (TJ).

• A: What is the Mounting-Type of the product?

  Q: The Mounting-Type of the product is Through Hole.

• A: Is the cutoff frequency of the product Number-of-Channels?

  Q: Yes, the product's Number-of-Channels is indeed 1 Channel

• A: At what frequency does the Supplier-Device-Package?

  Q: The product Supplier-Device-Package is TO-220AB.

• A: Is the cutoff frequency of the product Configuration?

  Q: Yes, the product's Configuration is indeed Single

• A: What is the FET-Type of the product?

  Q: The FET-Type of the product is MOSFET N-Channel, Metal Oxide.

• A: What is the Transistor-Type of the product?

  Q: The Transistor-Type of the product is 1 N-Channel.

• A: At what frequency does the Drain-to-Source-Voltage-Vdss?

  Q: The product Drain-to-Source-Voltage-Vdss is 60V.

• A: Is the cutoff frequency of the product Input-Capacitance-Ciss-Vds?

  Q: Yes, the product's Input-Capacitance-Ciss-Vds is indeed 345pF @ 25V

• A: What is the FET-Feature of the product?

  Q: The FET-Feature of the product is Standard.

• A: What is the Current-Continuous-Drain-Id-25°C of the product?

  Q: The Current-Continuous-Drain-Id-25°C of the product is 16A (Tc).

• A: Is the cutoff frequency of the product Rds-On-Max-Id-Vgs?

  Q: Yes, the product's Rds-On-Max-Id-Vgs is indeed 90 mOhm @ 8A, 10V

• A: Is the cutoff frequency of the product Pd-Power-Dissipation?

  Q: Yes, the product's Pd-Power-Dissipation is indeed 45 W

• A: What is the Maximum-Operating-Temperature of the product?

  Q: The Maximum-Operating-Temperature of the product is + 175 C.

• A: What is the Minimum-Operating-Temperature of the product?

  Q: The Minimum-Operating-Temperature of the product is - 55 C.

• A: What is the Fall-Time of the product?

  Q: The Fall-Time of the product is 12.5 ns.

• A: What is the Rise-Time of the product?

  Q: The Rise-Time of the product is 37 ns.

• A: What is the Vgs-Gate-Source-Voltage of the product?

  Q: The Vgs-Gate-Source-Voltage of the product is 16 V.

• A: At what frequency does the Id-Continuous-Drain-Current?

  Q: The product Id-Continuous-Drain-Current is 16 A.

• A: At what frequency does the Vds-Drain-Source-Breakdown-Voltage?

  Q: The product Vds-Drain-Source-Breakdown-Voltage is 60 V.

• A: Is the cutoff frequency of the product Rds-On-Drain-Source-Resistance?

  Q: Yes, the product's Rds-On-Drain-Source-Resistance is indeed 80 mOhms

• A: At what frequency does the Transistor-Polarity?

  Q: The product Transistor-Polarity is N-Channel.

• A: Is the cutoff frequency of the product Typical-Turn-Off-Delay-Time?

  Q: Yes, the product's Typical-Turn-Off-Delay-Time is indeed 20 ns

• A: What is the Typical-Turn-On-Delay-Time of the product?

  Q: The Typical-Turn-On-Delay-Time of the product is 10 ns.

• A: What is the Forward-Transconductance-Min of the product?

  Q: The Forward-Transconductance-Min of the product is 17 S.

• A: What is the Channel-Mode of the product?

  Q: The Channel-Mode of the product is Enhancement.