| Mfr. #: | STP170N8F7 |
|---|---|
| Hersteller: | STMicroelectronics |
| Beschreibung: | MOSFET N-CH 80V 120A TO-220AB |
| Lebenszyklus: | Neu von diesem Hersteller. |
| Datenblatt: | STP170N8F7 Datenblatt |
Product belongs to the N-channel STripFET series. Weight of 0.011640 oz Through Hole Mounting-Style TO-220-3 Si is the technology used. Number of channels: 1 Channel Power-off control: 250 W Maximum operating temperature of + 175 C Minimum operating temperature: - 55 C This product has a 37 ns of 16 ns. This product has a 53 ns of 16 ns. This product's +/- 20 V. The ID of continuous drain current is 120 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 80 V. This product has a 2.5 V to 4.5 V Vgs-th gate-source threshold voltage for efficient power management. The 3.9 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 79 ns This product has a 38 ns. Qg-Gate-Charge is 120 nC. This product operates in Enhancement channel mode for optimal performance.
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
STP170N8F7 Specifications
A: What is the Series of the product?
Q: The Series of the product is N-channel STripFET.
A: At what frequency does the Unit-Weight?
Q: The product Unit-Weight is 0.011640 oz.
A: At what frequency does the Mounting-Style?
Q: The product Mounting-Style is Through Hole.
A: Is the cutoff frequency of the product Package-Case?
Q: Yes, the product's Package-Case is indeed TO-220-3
A: At what frequency does the Technology?
Q: The product Technology is Si.
A: Is the cutoff frequency of the product Number-of-Channels?
Q: Yes, the product's Number-of-Channels is indeed 1 Channel
A: What is the Pd-Power-Dissipation of the product?
Q: The Pd-Power-Dissipation of the product is 250 W.
A: At what frequency does the Maximum-Operating-Temperature?
Q: The product Maximum-Operating-Temperature is + 175 C.
A: What is the Minimum-Operating-Temperature of the product?
Q: The Minimum-Operating-Temperature of the product is - 55 C.
A: Is the cutoff frequency of the product Fall-Time?
Q: Yes, the product's Fall-Time is indeed 37 ns
A: Is the cutoff frequency of the product Rise-Time?
Q: Yes, the product's Rise-Time is indeed 53 ns
A: What is the Vgs-Gate-Source-Voltage of the product?
Q: The Vgs-Gate-Source-Voltage of the product is +/- 20 V.
A: At what frequency does the Id-Continuous-Drain-Current?
Q: The product Id-Continuous-Drain-Current is 120 A.
A: Is the cutoff frequency of the product Vds-Drain-Source-Breakdown-Voltage?
Q: Yes, the product's Vds-Drain-Source-Breakdown-Voltage is indeed 80 V
A: At what frequency does the Vgs-th-Gate-Source-Threshold-Voltage?
Q: The product Vgs-th-Gate-Source-Threshold-Voltage is 2.5 V to 4.5 V.
A: At what frequency does the Rds-On-Drain-Source-Resistance?
Q: The product Rds-On-Drain-Source-Resistance is 3.9 mOhms.
A: What is the Transistor-Polarity of the product?
Q: The Transistor-Polarity of the product is N-Channel.
A: Is the cutoff frequency of the product Typical-Turn-Off-Delay-Time?
Q: Yes, the product's Typical-Turn-Off-Delay-Time is indeed 79 ns
A: What is the Typical-Turn-On-Delay-Time of the product?
Q: The Typical-Turn-On-Delay-Time of the product is 38 ns.
A: At what frequency does the Qg-Gate-Charge?
Q: The product Qg-Gate-Charge is 120 nC.
A: Is the cutoff frequency of the product Channel-Mode?
Q: Yes, the product's Channel-Mode is indeed Enhancement