STP2N62K3

Mfr. #: STP2N62K3
Hersteller: STMicroelectronics
Beschreibung: IGBT Transistors MOSFET N-Ch 620V 3 Ohm 2.2A SuperMESH3
Lebenszyklus: Neu von diesem Hersteller.
Datenblatt: STP2N62K3 Datenblatt
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
STP2N62K3 Overview

Product belongs to the STP2N62K3 series. Tube is the packaging method for this product Weight of 0.011640 oz Through Hole Mounting-Style TO-220-3 Si is the technology used. Number of channels: 1 Channel Configuration Single Transistor type: 1 N-Channel Power-off control: 45 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product's 30 V. The ID of continuous drain current is 2.2 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 620 V. The 3.6 Ohms for this product is 12 Ohms. The transistor polarity is N-Channel. Qg-Gate-Charge is 15 nC.

STP2N62K3 Image

STP2N62K3

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STP2N62K3 Specifications
  • Manufacturer ST
  • Product Category FETs - Single
  • Series STP2N62K3
  • Packaging Tube
  • Unit-Weight 0.011640 oz
  • Mounting-Style Through Hole
  • Package-Case TO-220-3
  • Technology Si
  • Number-of-Channels 1 Channel
  • Configuration Single
  • Transistor-Type 1 N-Channel
  • Pd-Power-Dissipation 45 W
  • Maximum-Operating-Temperature + 150 C
  • Minimum-Operating-Temperature - 55 C
  • Vgs-Gate-Source-Voltage 30 V
  • Id-Continuous-Drain-Current 2.2 A
  • Vds-Drain-Source-Breakdown-Voltage 620 V
  • Rds-On-Drain-Source-Resistance 3.6 Ohms
  • Transistor-Polarity N-Channel
  • Qg-Gate-Charge 15 nC

STP2N62K3

STP2N62K3 Specifications

STP2N62K3 FAQ
  • A: What is the Series of the product?

    Q: The Series of the product is STP2N62K3.

  • A: What is the Packaging of the product?

    Q: The Packaging of the product is Tube.

  • A: What is the Unit-Weight of the product?

    Q: The Unit-Weight of the product is 0.011640 oz.

  • A: Is the cutoff frequency of the product Mounting-Style?

    Q: Yes, the product's Mounting-Style is indeed Through Hole

  • A: Is the cutoff frequency of the product Package-Case?

    Q: Yes, the product's Package-Case is indeed TO-220-3

  • A: At what frequency does the Technology?

    Q: The product Technology is Si.

  • A: What is the Number-of-Channels of the product?

    Q: The Number-of-Channels of the product is 1 Channel.

  • A: At what frequency does the Configuration?

    Q: The product Configuration is Single.

  • A: At what frequency does the Transistor-Type?

    Q: The product Transistor-Type is 1 N-Channel.

  • A: What is the Pd-Power-Dissipation of the product?

    Q: The Pd-Power-Dissipation of the product is 45 W.

  • A: At what frequency does the Maximum-Operating-Temperature?

    Q: The product Maximum-Operating-Temperature is + 150 C.

  • A: At what frequency does the Minimum-Operating-Temperature?

    Q: The product Minimum-Operating-Temperature is - 55 C.

  • A: What is the Vgs-Gate-Source-Voltage of the product?

    Q: The Vgs-Gate-Source-Voltage of the product is 30 V.

  • A: What is the Id-Continuous-Drain-Current of the product?

    Q: The Id-Continuous-Drain-Current of the product is 2.2 A.

  • A: At what frequency does the Vds-Drain-Source-Breakdown-Voltage?

    Q: The product Vds-Drain-Source-Breakdown-Voltage is 620 V.

  • A: Is the cutoff frequency of the product Rds-On-Drain-Source-Resistance?

    Q: Yes, the product's Rds-On-Drain-Source-Resistance is indeed 3.6 Ohms

  • A: Is the cutoff frequency of the product Transistor-Polarity?

    Q: Yes, the product's Transistor-Polarity is indeed N-Channel

  • A: Is the cutoff frequency of the product Qg-Gate-Charge?

    Q: Yes, the product's Qg-Gate-Charge is indeed 15 nC

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1
0,87 $
0,87 $
10
0,83 $
8,30 $
100
0,79 $
78,60 $
500
0,74 $
371,15 $
1000
0,70 $
698,60 $
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