STP34NM60ND

Mfr. #: STP34NM60ND
Hersteller: STMicroelectronics
Beschreibung: MOSFET N-CH 600V 29A TO-220AB
Lebenszyklus: Neu von diesem Hersteller.
Datenblatt: STP34NM60ND Datenblatt
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
STP34NM60ND Overview

Product belongs to the N-channel MDmesh series. Tube is the packaging method for this product Weight of 0.011640 oz Through Hole Mounting-Style TO-220-3 Si is the technology used. Number of channels: 1 Channel Configuration Single Transistor type: 1 N-Channel Power-off control: 190 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 61.8 ns of 16 ns. This product has a 53.4 ns of 16 ns. This product's 25 V. The ID of continuous drain current is 29 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 600 V. The 110 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 111 ns This product has a 30 ns. Qg-Gate-Charge is 80.4 nC. This product operates in Enhancement channel mode for optimal performance.

STP34NM60ND Image

STP34NM60ND

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STP34NM60ND Specifications
  • Manufacturer ST
  • Product Category FETs - Single
  • Series N-channel MDmesh
  • Packaging Tube
  • Unit-Weight 0.011640 oz
  • Mounting-Style Through Hole
  • Package-Case TO-220-3
  • Technology Si
  • Number-of-Channels 1 Channel
  • Configuration Single
  • Transistor-Type 1 N-Channel
  • Pd-Power-Dissipation 190 W
  • Maximum-Operating-Temperature + 150 C
  • Minimum-Operating-Temperature - 55 C
  • Fall-Time 61.8 ns
  • Rise-Time 53.4 ns
  • Vgs-Gate-Source-Voltage 25 V
  • Id-Continuous-Drain-Current 29 A
  • Vds-Drain-Source-Breakdown-Voltage 600 V
  • Rds-On-Drain-Source-Resistance 110 mOhms
  • Transistor-Polarity N-Channel
  • Typical-Turn-Off-Delay-Time 111 ns
  • Typical-Turn-On-Delay-Time 30 ns
  • Qg-Gate-Charge 80.4 nC
  • Channel-Mode Enhancement

STP34NM60ND

STP34NM60ND Specifications

STP34NM60ND FAQ
  • A: What is the Series of the product?

    Q: The Series of the product is N-channel MDmesh.

  • A: What is the Packaging of the product?

    Q: The Packaging of the product is Tube.

  • A: Is the cutoff frequency of the product Unit-Weight?

    Q: Yes, the product's Unit-Weight is indeed 0.011640 oz

  • A: At what frequency does the Mounting-Style?

    Q: The product Mounting-Style is Through Hole.

  • A: At what frequency does the Package-Case?

    Q: The product Package-Case is TO-220-3.

  • A: Is the cutoff frequency of the product Technology?

    Q: Yes, the product's Technology is indeed Si

  • A: Is the cutoff frequency of the product Number-of-Channels?

    Q: Yes, the product's Number-of-Channels is indeed 1 Channel

  • A: What is the Configuration of the product?

    Q: The Configuration of the product is Single.

  • A: What is the Transistor-Type of the product?

    Q: The Transistor-Type of the product is 1 N-Channel.

  • A: At what frequency does the Pd-Power-Dissipation?

    Q: The product Pd-Power-Dissipation is 190 W.

  • A: What is the Maximum-Operating-Temperature of the product?

    Q: The Maximum-Operating-Temperature of the product is + 150 C.

  • A: Is the cutoff frequency of the product Minimum-Operating-Temperature?

    Q: Yes, the product's Minimum-Operating-Temperature is indeed - 55 C

  • A: What is the Fall-Time of the product?

    Q: The Fall-Time of the product is 61.8 ns.

  • A: Is the cutoff frequency of the product Rise-Time?

    Q: Yes, the product's Rise-Time is indeed 53.4 ns

  • A: At what frequency does the Vgs-Gate-Source-Voltage?

    Q: The product Vgs-Gate-Source-Voltage is 25 V.

  • A: What is the Id-Continuous-Drain-Current of the product?

    Q: The Id-Continuous-Drain-Current of the product is 29 A.

  • A: Is the cutoff frequency of the product Vds-Drain-Source-Breakdown-Voltage?

    Q: Yes, the product's Vds-Drain-Source-Breakdown-Voltage is indeed 600 V

  • A: What is the Rds-On-Drain-Source-Resistance of the product?

    Q: The Rds-On-Drain-Source-Resistance of the product is 110 mOhms.

  • A: At what frequency does the Transistor-Polarity?

    Q: The product Transistor-Polarity is N-Channel.

  • A: What is the Typical-Turn-Off-Delay-Time of the product?

    Q: The Typical-Turn-Off-Delay-Time of the product is 111 ns.

  • A: What is the Typical-Turn-On-Delay-Time of the product?

    Q: The Typical-Turn-On-Delay-Time of the product is 30 ns.

  • A: What is the Qg-Gate-Charge of the product?

    Q: The Qg-Gate-Charge of the product is 80.4 nC.

  • A: What is the Channel-Mode of the product?

    Q: The Channel-Mode of the product is Enhancement.

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