STP5NK80Z

Mfr. #: STP5NK80Z
Hersteller: STMicroelectronics
Beschreibung: MOSFET N-CH 800V 4.3A TO-220
Lebenszyklus: Neu von diesem Hersteller.
Datenblatt: STP5NK80Z Datenblatt
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
STP5NK80Z Overview

Product belongs to the PowerMESH series. Tube is the packaging method for this product Weight of 0.050717 oz Through Hole Mounting-Style TO-220-3 Si is the technology used. Operational temperature range: -55°C ~ 150°C (TJ) Through Hole mounting type Number of channels: 1 Channel Supplier device package: TO-220AB Configuration Single This product uses an MOSFET N-Channel, Metal Oxide FET-Type transistor. Transistor type: 1 N-Channel 800V This product has an 910pF @ 25V value of 300pF @ 25V. This product's Standard. 4.3A (Tc) continuous drain-ID current at 25°C; This product has an 2.4 Ohm @ 2.15A, 10V of 12 Ohm @ 150mA, 0V. Power-off control: 110 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 30 ns of 16 ns. This product has a 25 ns of 16 ns. This product's 30 V. The ID of continuous drain current is 4.3 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 800 V. The 2.4 Ohms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 45 ns This product has a 18 ns. Qg-Gate-Charge is 32.4 nC. This product features a 4.25 S of 500 S for high performance. This product operates in Enhancement channel mode for optimal performance.

STP5NK80Z Image

STP5NK80Z

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STP5NK80Z Specifications
  • Manufacturer STMicroelectronics
  • Product Category FETs - Single
  • Series PowerMESH
  • Packaging Tube
  • Unit-Weight 0.050717 oz
  • Mounting-Style Through Hole
  • Package-Case TO-220-3
  • Technology Si
  • Operating-Temperature -55°C ~ 150°C (TJ)
  • Mounting-Type Through Hole
  • Number-of-Channels 1 Channel
  • Supplier-Device-Package TO-220AB
  • Configuration Single
  • FET-Type MOSFET N-Channel, Metal Oxide
  • Power-Max 110W
  • Transistor-Type 1 N-Channel
  • Drain-to-Source-Voltage-Vdss 800V
  • Input-Capacitance-Ciss-Vds 910pF @ 25V
  • FET-Feature Standard
  • Current-Continuous-Drain-Id-25°C 4.3A (Tc)
  • Rds-On-Max-Id-Vgs 2.4 Ohm @ 2.15A, 10V
  • Vgs-th-Max-Id 4.5V @ 100μA
  • Gate-Charge-Qg-Vgs 45.5nC @ 10V
  • Pd-Power-Dissipation 110 W
  • Maximum-Operating-Temperature + 150 C
  • Minimum-Operating-Temperature - 55 C
  • Fall-Time 30 ns
  • Rise-Time 25 ns
  • Vgs-Gate-Source-Voltage 30 V
  • Id-Continuous-Drain-Current 4.3 A
  • Vds-Drain-Source-Breakdown-Voltage 800 V
  • Rds-On-Drain-Source-Resistance 2.4 Ohms
  • Transistor-Polarity N-Channel
  • Typical-Turn-Off-Delay-Time 45 ns
  • Typical-Turn-On-Delay-Time 18 ns
  • Qg-Gate-Charge 32.4 nC
  • Forward-Transconductance-Min 4.25 S
  • Channel-Mode Enhancement

STP5NK80Z

STP5NK80Z Specifications

STP5NK80Z FAQ
  • A: What is the Series of the product?

    Q: The Series of the product is PowerMESH.

  • A: What is the Packaging of the product?

    Q: The Packaging of the product is Tube.

  • A: At what frequency does the Unit-Weight?

    Q: The product Unit-Weight is 0.050717 oz.

  • A: Is the cutoff frequency of the product Mounting-Style?

    Q: Yes, the product's Mounting-Style is indeed Through Hole

  • A: At what frequency does the Package-Case?

    Q: The product Package-Case is TO-220-3.

  • A: At what frequency does the Technology?

    Q: The product Technology is Si.

  • A: What is the Operating-Temperature of the product?

    Q: The Operating-Temperature of the product is -55°C ~ 150°C (TJ).

  • A: At what frequency does the Mounting-Type?

    Q: The product Mounting-Type is Through Hole.

  • A: At what frequency does the Number-of-Channels?

    Q: The product Number-of-Channels is 1 Channel.

  • A: At what frequency does the Supplier-Device-Package?

    Q: The product Supplier-Device-Package is TO-220AB.

  • A: Is the cutoff frequency of the product Configuration?

    Q: Yes, the product's Configuration is indeed Single

  • A: At what frequency does the FET-Type?

    Q: The product FET-Type is MOSFET N-Channel, Metal Oxide.

  • A: Is the cutoff frequency of the product Transistor-Type?

    Q: Yes, the product's Transistor-Type is indeed 1 N-Channel

  • A: What is the Drain-to-Source-Voltage-Vdss of the product?

    Q: The Drain-to-Source-Voltage-Vdss of the product is 800V.

  • A: What is the Input-Capacitance-Ciss-Vds of the product?

    Q: The Input-Capacitance-Ciss-Vds of the product is 910pF @ 25V.

  • A: What is the FET-Feature of the product?

    Q: The FET-Feature of the product is Standard.

  • A: At what frequency does the Current-Continuous-Drain-Id-25°C?

    Q: The product Current-Continuous-Drain-Id-25°C is 4.3A (Tc).

  • A: Is the cutoff frequency of the product Rds-On-Max-Id-Vgs?

    Q: Yes, the product's Rds-On-Max-Id-Vgs is indeed 2.4 Ohm @ 2.15A, 10V

  • A: What is the Pd-Power-Dissipation of the product?

    Q: The Pd-Power-Dissipation of the product is 110 W.

  • A: At what frequency does the Maximum-Operating-Temperature?

    Q: The product Maximum-Operating-Temperature is + 150 C.

  • A: At what frequency does the Minimum-Operating-Temperature?

    Q: The product Minimum-Operating-Temperature is - 55 C.

  • A: What is the Fall-Time of the product?

    Q: The Fall-Time of the product is 30 ns.

  • A: What is the Rise-Time of the product?

    Q: The Rise-Time of the product is 25 ns.

  • A: What is the Vgs-Gate-Source-Voltage of the product?

    Q: The Vgs-Gate-Source-Voltage of the product is 30 V.

  • A: At what frequency does the Id-Continuous-Drain-Current?

    Q: The product Id-Continuous-Drain-Current is 4.3 A.

  • A: Is the cutoff frequency of the product Vds-Drain-Source-Breakdown-Voltage?

    Q: Yes, the product's Vds-Drain-Source-Breakdown-Voltage is indeed 800 V

  • A: At what frequency does the Rds-On-Drain-Source-Resistance?

    Q: The product Rds-On-Drain-Source-Resistance is 2.4 Ohms.

  • A: What is the Transistor-Polarity of the product?

    Q: The Transistor-Polarity of the product is N-Channel.

  • A: At what frequency does the Typical-Turn-Off-Delay-Time?

    Q: The product Typical-Turn-Off-Delay-Time is 45 ns.

  • A: What is the Typical-Turn-On-Delay-Time of the product?

    Q: The Typical-Turn-On-Delay-Time of the product is 18 ns.

  • A: At what frequency does the Qg-Gate-Charge?

    Q: The product Qg-Gate-Charge is 32.4 nC.

  • A: What is the Forward-Transconductance-Min of the product?

    Q: The Forward-Transconductance-Min of the product is 4.25 S.

  • A: Is the cutoff frequency of the product Channel-Mode?

    Q: Yes, the product's Channel-Mode is indeed Enhancement

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1
0,62 $
0,62 $
10
0,59 $
5,93 $
100
0,56 $
56,17 $
500
0,53 $
265,25 $
1000
0,50 $
499,30 $
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