STP75N3LLH6

Mfr. #: STP75N3LLH6
Hersteller: STMicroelectronics
Beschreibung: IGBT Transistors MOSFET N-Ch 30V 0.0042 Ohm 75A STripFET VI
Lebenszyklus: Neu von diesem Hersteller.
Datenblatt: STP75N3LLH6 Datenblatt
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
STP75N3LLH6 Overview

Product belongs to the STP75N3LLH6 series. Tube is the packaging method for this product Weight of 0.011640 oz Through Hole Mounting-Style TO-220-3 Si is the technology used. Number of channels: 1 Channel Configuration Single Transistor type: 1 N-Channel Power-off control: 60 W Maximum operating temperature of + 175 C Minimum operating temperature: - 55 C This product has a 12 ns of 16 ns. This product has a 30 ns of 16 ns. This product's 20 V. The ID of continuous drain current is 75 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 30 V. This product has a 1.7 V Vgs-th gate-source threshold voltage for efficient power management. The 5.9 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 37 ns This product has a 9.5 ns. Qg-Gate-Charge is 17 nC. This product operates in Enhancement channel mode for optimal performance.

STP75N3LLH6 Image

STP75N3LLH6

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STP75N3LLH6 Specifications
  • Manufacturer STMicroelectronics
  • Product Category Transistors - FETs, MOSFETs - Single
  • Series STP75N3LLH6
  • Packaging Tube
  • Unit-Weight 0.011640 oz
  • Mounting-Style Through Hole
  • Package-Case TO-220-3
  • Technology Si
  • Number-of-Channels 1 Channel
  • Configuration Single
  • Transistor-Type 1 N-Channel
  • Pd-Power-Dissipation 60 W
  • Maximum-Operating-Temperature + 175 C
  • Minimum-Operating-Temperature - 55 C
  • Fall-Time 12 ns
  • Rise-Time 30 ns
  • Vgs-Gate-Source-Voltage 20 V
  • Id-Continuous-Drain-Current 75 A
  • Vds-Drain-Source-Breakdown-Voltage 30 V
  • Vgs-th-Gate-Source-Threshold-Voltage 1.7 V
  • Rds-On-Drain-Source-Resistance 5.9 mOhms
  • Transistor-Polarity N-Channel
  • Typical-Turn-Off-Delay-Time 37 ns
  • Typical-Turn-On-Delay-Time 9.5 ns
  • Qg-Gate-Charge 17 nC
  • Channel-Mode Enhancement

STP75N3LLH6

STP75N3LLH6 Specifications

STP75N3LLH6 FAQ
  • A: Is the cutoff frequency of the product Series?

    Q: Yes, the product's Series is indeed STP75N3LLH6

  • A: What is the Packaging of the product?

    Q: The Packaging of the product is Tube.

  • A: What is the Unit-Weight of the product?

    Q: The Unit-Weight of the product is 0.011640 oz.

  • A: Is the cutoff frequency of the product Mounting-Style?

    Q: Yes, the product's Mounting-Style is indeed Through Hole

  • A: Is the cutoff frequency of the product Package-Case?

    Q: Yes, the product's Package-Case is indeed TO-220-3

  • A: Is the cutoff frequency of the product Technology?

    Q: Yes, the product's Technology is indeed Si

  • A: Is the cutoff frequency of the product Number-of-Channels?

    Q: Yes, the product's Number-of-Channels is indeed 1 Channel

  • A: What is the Configuration of the product?

    Q: The Configuration of the product is Single.

  • A: What is the Transistor-Type of the product?

    Q: The Transistor-Type of the product is 1 N-Channel.

  • A: What is the Pd-Power-Dissipation of the product?

    Q: The Pd-Power-Dissipation of the product is 60 W.

  • A: Is the cutoff frequency of the product Maximum-Operating-Temperature?

    Q: Yes, the product's Maximum-Operating-Temperature is indeed + 175 C

  • A: What is the Minimum-Operating-Temperature of the product?

    Q: The Minimum-Operating-Temperature of the product is - 55 C.

  • A: What is the Fall-Time of the product?

    Q: The Fall-Time of the product is 12 ns.

  • A: Is the cutoff frequency of the product Rise-Time?

    Q: Yes, the product's Rise-Time is indeed 30 ns

  • A: Is the cutoff frequency of the product Vgs-Gate-Source-Voltage?

    Q: Yes, the product's Vgs-Gate-Source-Voltage is indeed 20 V

  • A: Is the cutoff frequency of the product Id-Continuous-Drain-Current?

    Q: Yes, the product's Id-Continuous-Drain-Current is indeed 75 A

  • A: At what frequency does the Vds-Drain-Source-Breakdown-Voltage?

    Q: The product Vds-Drain-Source-Breakdown-Voltage is 30 V.

  • A: What is the Vgs-th-Gate-Source-Threshold-Voltage of the product?

    Q: The Vgs-th-Gate-Source-Threshold-Voltage of the product is 1.7 V.

  • A: What is the Rds-On-Drain-Source-Resistance of the product?

    Q: The Rds-On-Drain-Source-Resistance of the product is 5.9 mOhms.

  • A: Is the cutoff frequency of the product Transistor-Polarity?

    Q: Yes, the product's Transistor-Polarity is indeed N-Channel

  • A: Is the cutoff frequency of the product Typical-Turn-Off-Delay-Time?

    Q: Yes, the product's Typical-Turn-Off-Delay-Time is indeed 37 ns

  • A: Is the cutoff frequency of the product Typical-Turn-On-Delay-Time?

    Q: Yes, the product's Typical-Turn-On-Delay-Time is indeed 9.5 ns

  • A: At what frequency does the Qg-Gate-Charge?

    Q: The product Qg-Gate-Charge is 17 nC.

  • A: Is the cutoff frequency of the product Channel-Mode?

    Q: Yes, the product's Channel-Mode is indeed Enhancement

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