STP75N75F4

STP75N75F4 Overview

Product belongs to the N-channel STripFET series. Tube is the packaging method for this product Weight of 0.011640 oz Through Hole Mounting-Style TO-220-3 Si is the technology used. Number of channels: 1 Channel Transistor type: 1 N-Channel Power-off control: 150 W This product has a 14 ns of 16 ns. This product has a 33 ns of 16 ns. The ID of continuous drain current is 78 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 75 V. This product has a 4 V Vgs-th gate-source threshold voltage for efficient power management. The 11 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 61 ns This product has a 25 ns. Qg-Gate-Charge is 76 nC. This product operates in Enhancement channel mode for optimal performance.

STP75N75F4 Image

STP75N75F4 Specifications

• Manufacturer STMicroelectronics
• Product Category Transistors - FETs, MOSFETs - Single
• Series N-channel STripFET
• Packaging Tube
• Unit-Weight 0.011640 oz
• Mounting-Style Through Hole
• Package-Case TO-220-3
• Technology Si
• Number-of-Channels 1 Channel
• Transistor-Type 1 N-Channel
• Pd-Power-Dissipation 150 W
• Fall-Time 14 ns
• Rise-Time 33 ns
• Id-Continuous-Drain-Current 78 A
• Vds-Drain-Source-Breakdown-Voltage 75 V
• Vgs-th-Gate-Source-Threshold-Voltage 4 V
• Rds-On-Drain-Source-Resistance 11 mOhms
• Transistor-Polarity N-Channel
• Typical-Turn-Off-Delay-Time 61 ns
• Typical-Turn-On-Delay-Time 25 ns
• Qg-Gate-Charge 76 nC
• Channel-Mode Enhancement

STP75N75F4 FAQ

• A: What is the Series of the product?

  Q: The Series of the product is N-channel STripFET.

• A: Is the cutoff frequency of the product Packaging?

  Q: Yes, the product's Packaging is indeed Tube

• A: At what frequency does the Unit-Weight?

  Q: The product Unit-Weight is 0.011640 oz.

• A: At what frequency does the Mounting-Style?

  Q: The product Mounting-Style is Through Hole.

• A: What is the Package-Case of the product?

  Q: The Package-Case of the product is TO-220-3.

• A: Is the cutoff frequency of the product Technology?

  Q: Yes, the product's Technology is indeed Si

• A: What is the Number-of-Channels of the product?

  Q: The Number-of-Channels of the product is 1 Channel.

• A: What is the Transistor-Type of the product?

  Q: The Transistor-Type of the product is 1 N-Channel.

• A: Is the cutoff frequency of the product Pd-Power-Dissipation?

  Q: Yes, the product's Pd-Power-Dissipation is indeed 150 W

• A: What is the Fall-Time of the product?

  Q: The Fall-Time of the product is 14 ns.

• A: What is the Rise-Time of the product?

  Q: The Rise-Time of the product is 33 ns.

• A: Is the cutoff frequency of the product Id-Continuous-Drain-Current?

  Q: Yes, the product's Id-Continuous-Drain-Current is indeed 78 A

• A: At what frequency does the Vds-Drain-Source-Breakdown-Voltage?

  Q: The product Vds-Drain-Source-Breakdown-Voltage is 75 V.

• A: What is the Vgs-th-Gate-Source-Threshold-Voltage of the product?

  Q: The Vgs-th-Gate-Source-Threshold-Voltage of the product is 4 V.

• A: What is the Rds-On-Drain-Source-Resistance of the product?

  Q: The Rds-On-Drain-Source-Resistance of the product is 11 mOhms.

• A: What is the Transistor-Polarity of the product?

  Q: The Transistor-Polarity of the product is N-Channel.

• A: At what frequency does the Typical-Turn-Off-Delay-Time?

  Q: The product Typical-Turn-Off-Delay-Time is 61 ns.

• A: What is the Typical-Turn-On-Delay-Time of the product?

  Q: The Typical-Turn-On-Delay-Time of the product is 25 ns.

• A: What is the Qg-Gate-Charge of the product?

  Q: The Qg-Gate-Charge of the product is 76 nC.

• A: Is the cutoff frequency of the product Channel-Mode?

  Q: Yes, the product's Channel-Mode is indeed Enhancement