STP80N6F6

STP80N6F6 Overview

Product belongs to the N-channel STripFET series. Tube is the packaging method for this product Weight of 0.011640 oz Through Hole Mounting-Style TO-220-3 Si is the technology used. Number of channels: 1 Channel Configuration Single Transistor type: 1 N-Channel Power-off control: 150 W Maximum operating temperature of + 175 C Minimum operating temperature: - 55 C This product's 20 V. The ID of continuous drain current is 110 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 60 V. This product has a 4.5 V Vgs-th gate-source threshold voltage for efficient power management. The 5.8 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. Qg-Gate-Charge is 122 nC.

STP80N6F6 Image

STP80N6F6 Specifications

• Manufacturer STMicroelectronics
• Product Category Transistors - FETs, MOSFETs - Single
• Series N-channel STripFET
• Packaging Tube
• Unit-Weight 0.011640 oz
• Mounting-Style Through Hole
• Package-Case TO-220-3
• Technology Si
• Number-of-Channels 1 Channel
• Configuration Single
• Transistor-Type 1 N-Channel
• Pd-Power-Dissipation 150 W
• Maximum-Operating-Temperature + 175 C
• Minimum-Operating-Temperature - 55 C
• Vgs-Gate-Source-Voltage 20 V
• Id-Continuous-Drain-Current 110 A
• Vds-Drain-Source-Breakdown-Voltage 60 V
• Vgs-th-Gate-Source-Threshold-Voltage 4.5 V
• Rds-On-Drain-Source-Resistance 5.8 mOhms
• Transistor-Polarity N-Channel
• Qg-Gate-Charge 122 nC

STP80N6F6 FAQ

• A: Is the cutoff frequency of the product Series?

  Q: Yes, the product's Series is indeed N-channel STripFET

• A: At what frequency does the Packaging?

  Q: The product Packaging is Tube.

• A: Is the cutoff frequency of the product Unit-Weight?

  Q: Yes, the product's Unit-Weight is indeed 0.011640 oz

• A: Is the cutoff frequency of the product Mounting-Style?

  Q: Yes, the product's Mounting-Style is indeed Through Hole

• A: What is the Package-Case of the product?

  Q: The Package-Case of the product is TO-220-3.

• A: What is the Technology of the product?

  Q: The Technology of the product is Si.

• A: At what frequency does the Number-of-Channels?

  Q: The product Number-of-Channels is 1 Channel.

• A: Is the cutoff frequency of the product Configuration?

  Q: Yes, the product's Configuration is indeed Single

• A: What is the Transistor-Type of the product?

  Q: The Transistor-Type of the product is 1 N-Channel.

• A: What is the Pd-Power-Dissipation of the product?

  Q: The Pd-Power-Dissipation of the product is 150 W.

• A: What is the Maximum-Operating-Temperature of the product?

  Q: The Maximum-Operating-Temperature of the product is + 175 C.

• A: What is the Minimum-Operating-Temperature of the product?

  Q: The Minimum-Operating-Temperature of the product is - 55 C.

• A: At what frequency does the Vgs-Gate-Source-Voltage?

  Q: The product Vgs-Gate-Source-Voltage is 20 V.

• A: At what frequency does the Id-Continuous-Drain-Current?

  Q: The product Id-Continuous-Drain-Current is 110 A.

• A: At what frequency does the Vds-Drain-Source-Breakdown-Voltage?

  Q: The product Vds-Drain-Source-Breakdown-Voltage is 60 V.

• A: Is the cutoff frequency of the product Vgs-th-Gate-Source-Threshold-Voltage?

  Q: Yes, the product's Vgs-th-Gate-Source-Threshold-Voltage is indeed 4.5 V

• A: What is the Rds-On-Drain-Source-Resistance of the product?

  Q: The Rds-On-Drain-Source-Resistance of the product is 5.8 mOhms.

• A: What is the Transistor-Polarity of the product?

  Q: The Transistor-Polarity of the product is N-Channel.

• A: Is the cutoff frequency of the product Qg-Gate-Charge?

  Q: Yes, the product's Qg-Gate-Charge is indeed 122 nC