| Mfr. #: | STP8NK80Z |
|---|---|
| Hersteller: | STMicroelectronics |
| Beschreibung: | MOSFET N-CH 800V 6.2A TO-220 |
| Lebenszyklus: | Neu von diesem Hersteller. |
| Datenblatt: | STP8NK80Z Datenblatt |


Product belongs to the N-channel MDmesh series. Tube is the packaging method for this product Weight of 0.050717 oz Through Hole Mounting-Style TO-220-3 Si is the technology used. Number of channels: 1 Channel Configuration Single Transistor type: 1 N-Channel Power-off control: 140 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 28 ns of 16 ns. This product has a 30 ns of 16 ns. This product's 30 V. The ID of continuous drain current is 6.2 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 800 V. The 1.5 Ohms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 48 ns This product has a 17 ns. Qg-Gate-Charge is 46 nC. This product features a 5.2 S of 500 S for high performance. This product operates in Enhancement channel mode for optimal performance.

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STP8NK80Z Specifications
A: Is the cutoff frequency of the product Series?
Q: Yes, the product's Series is indeed N-channel MDmesh
A: Is the cutoff frequency of the product Packaging?
Q: Yes, the product's Packaging is indeed Tube
A: What is the Unit-Weight of the product?
Q: The Unit-Weight of the product is 0.050717 oz.
A: At what frequency does the Mounting-Style?
Q: The product Mounting-Style is Through Hole.
A: At what frequency does the Package-Case?
Q: The product Package-Case is TO-220-3.
A: What is the Technology of the product?
Q: The Technology of the product is Si.
A: At what frequency does the Number-of-Channels?
Q: The product Number-of-Channels is 1 Channel.
A: What is the Configuration of the product?
Q: The Configuration of the product is Single.
A: At what frequency does the Transistor-Type?
Q: The product Transistor-Type is 1 N-Channel.
A: Is the cutoff frequency of the product Pd-Power-Dissipation?
Q: Yes, the product's Pd-Power-Dissipation is indeed 140 W
A: Is the cutoff frequency of the product Maximum-Operating-Temperature?
Q: Yes, the product's Maximum-Operating-Temperature is indeed + 150 C
A: At what frequency does the Minimum-Operating-Temperature?
Q: The product Minimum-Operating-Temperature is - 55 C.
A: Is the cutoff frequency of the product Fall-Time?
Q: Yes, the product's Fall-Time is indeed 28 ns
A: At what frequency does the Rise-Time?
Q: The product Rise-Time is 30 ns.
A: What is the Vgs-Gate-Source-Voltage of the product?
Q: The Vgs-Gate-Source-Voltage of the product is 30 V.
A: What is the Id-Continuous-Drain-Current of the product?
Q: The Id-Continuous-Drain-Current of the product is 6.2 A.
A: Is the cutoff frequency of the product Vds-Drain-Source-Breakdown-Voltage?
Q: Yes, the product's Vds-Drain-Source-Breakdown-Voltage is indeed 800 V
A: Is the cutoff frequency of the product Rds-On-Drain-Source-Resistance?
Q: Yes, the product's Rds-On-Drain-Source-Resistance is indeed 1.5 Ohms
A: What is the Transistor-Polarity of the product?
Q: The Transistor-Polarity of the product is N-Channel.
A: Is the cutoff frequency of the product Typical-Turn-Off-Delay-Time?
Q: Yes, the product's Typical-Turn-Off-Delay-Time is indeed 48 ns
A: Is the cutoff frequency of the product Typical-Turn-On-Delay-Time?
Q: Yes, the product's Typical-Turn-On-Delay-Time is indeed 17 ns
A: What is the Qg-Gate-Charge of the product?
Q: The Qg-Gate-Charge of the product is 46 nC.
A: At what frequency does the Forward-Transconductance-Min?
Q: The product Forward-Transconductance-Min is 5.2 S.
A: Is the cutoff frequency of the product Channel-Mode?
Q: Yes, the product's Channel-Mode is indeed Enhancement