STW6N95K5

Mfr. #: STW6N95K5
Hersteller: STMicroelectronics
Beschreibung: MOSFET N-CH 950V 9A TO-274
Lebenszyklus: Neu von diesem Hersteller.
Datenblatt: STW6N95K5 Datenblatt
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
STW6N95K5 Overview

Product belongs to the MDmesh K5 series. Tube is the packaging method for this product Weight of 1.340411 oz Through Hole Mounting-Style TO-247-3 Si is the technology used. Power-off control: 90 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product's 30 V. The ID of continuous drain current is 9 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 950 V. The 1.25 Ohms for this product is 12 Ohms. The transistor polarity is N-Channel. Qg-Gate-Charge is 13 nC.

STW6N95K5 Image

STW6N95K5

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STW6N95K5 Specifications
  • Manufacturer ST
  • Product Category FETs - Single
  • Series MDmesh K5
  • Packaging Tube
  • Unit-Weight 1.340411 oz
  • Mounting-Style Through Hole
  • Package-Case TO-247-3
  • Technology Si
  • Pd-Power-Dissipation 90 W
  • Maximum-Operating-Temperature + 150 C
  • Minimum-Operating-Temperature - 55 C
  • Vgs-Gate-Source-Voltage 30 V
  • Id-Continuous-Drain-Current 9 A
  • Vds-Drain-Source-Breakdown-Voltage 950 V
  • Rds-On-Drain-Source-Resistance 1.25 Ohms
  • Transistor-Polarity N-Channel
  • Qg-Gate-Charge 13 nC

STW6N95K5

STW6N95K5 Specifications

STW6N95K5 FAQ
  • A: What is the Series of the product?

    Q: The Series of the product is MDmesh K5.

  • A: At what frequency does the Packaging?

    Q: The product Packaging is Tube.

  • A: Is the cutoff frequency of the product Unit-Weight?

    Q: Yes, the product's Unit-Weight is indeed 1.340411 oz

  • A: What is the Mounting-Style of the product?

    Q: The Mounting-Style of the product is Through Hole.

  • A: At what frequency does the Package-Case?

    Q: The product Package-Case is TO-247-3.

  • A: At what frequency does the Technology?

    Q: The product Technology is Si.

  • A: What is the Pd-Power-Dissipation of the product?

    Q: The Pd-Power-Dissipation of the product is 90 W.

  • A: At what frequency does the Maximum-Operating-Temperature?

    Q: The product Maximum-Operating-Temperature is + 150 C.

  • A: What is the Minimum-Operating-Temperature of the product?

    Q: The Minimum-Operating-Temperature of the product is - 55 C.

  • A: At what frequency does the Vgs-Gate-Source-Voltage?

    Q: The product Vgs-Gate-Source-Voltage is 30 V.

  • A: At what frequency does the Id-Continuous-Drain-Current?

    Q: The product Id-Continuous-Drain-Current is 9 A.

  • A: Is the cutoff frequency of the product Vds-Drain-Source-Breakdown-Voltage?

    Q: Yes, the product's Vds-Drain-Source-Breakdown-Voltage is indeed 950 V

  • A: At what frequency does the Rds-On-Drain-Source-Resistance?

    Q: The product Rds-On-Drain-Source-Resistance is 1.25 Ohms.

  • A: What is the Transistor-Polarity of the product?

    Q: The Transistor-Polarity of the product is N-Channel.

  • A: Is the cutoff frequency of the product Qg-Gate-Charge?

    Q: Yes, the product's Qg-Gate-Charge is indeed 13 nC

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