| Mfr. #: | STX616-AP |
|---|---|
| Hersteller: | STMicroelectronics |
| Beschreibung: | Bipolar Transistors - BJT High Voltage NPN power trans |
| Lebenszyklus: | Neu von diesem Hersteller. |
| Datenblatt: | STX616-AP Datenblatt |
Product belongs to the STX616 series. Cut Tape (CT) Alternate Packaging is the packaging method for this product Through Hole Mounting-Style TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Through Hole mounting type Supplier device package: TO-92AP Configuration Single Transistor type: NPN Maximum current collector Ic is 1.5A . Maximum collector-emitter breakdown voltage of 500V DC current gain minimum (hFE) of Ic/Vce at 12 @ 500mA, 5V. Product Attribute: Vce-Saturation-Max-Ib-Ic: 1V @ 200mA, 1A Power-off control: 2800 mW Maximum operating temperature of + 150 C Minimum operating temperature: - 65 C Rated VCEO up to 500 V The transistor polarity is NPN. Saturation voltage between collector and emitter is 1 V 12 V rating of 5 V Max DC collector current: 2.4 A Minimum hfe for DC collector-base gain is 17 at 500 uA at 2 V 25 at 200 mA at 5 V 12 at 500 mA at 5 V 4 at 1.5 A at 5 V.
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
STX616-AP Specifications
A: Is the cutoff frequency of the product Series?
Q: Yes, the product's Series is indeed STX616
A: At what frequency does the Packaging?
Q: The product Packaging is Cut Tape (CT) Alternate Packaging.
A: At what frequency does the Mounting-Style?
Q: The product Mounting-Style is Through Hole.
A: Is the cutoff frequency of the product Package-Case?
Q: Yes, the product's Package-Case is indeed TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
A: Is the cutoff frequency of the product Mounting-Type?
Q: Yes, the product's Mounting-Type is indeed Through Hole
A: At what frequency does the Supplier-Device-Package?
Q: The product Supplier-Device-Package is TO-92AP.
A: At what frequency does the Configuration?
Q: The product Configuration is Single.
A: Is the cutoff frequency of the product Transistor-Type?
Q: Yes, the product's Transistor-Type is indeed NPN
A: At what frequency does the Current-Collector-Ic-Max?
Q: The product Current-Collector-Ic-Max is 1.5A.
A: Is the cutoff frequency of the product Voltage-Collector-Emitter-Breakdown-Max?
Q: Yes, the product's Voltage-Collector-Emitter-Breakdown-Max is indeed 500V
A: Is the cutoff frequency of the product DC-Current-Gain-hFE-Min-Ic-Vce?
Q: Yes, the product's DC-Current-Gain-hFE-Min-Ic-Vce is indeed 12 @ 500mA, 5V
A: At what frequency does the Vce-Saturation-Max-Ib-Ic?
Q: The product Vce-Saturation-Max-Ib-Ic is 1V @ 200mA, 1A.
A: Is the cutoff frequency of the product Pd-Power-Dissipation?
Q: Yes, the product's Pd-Power-Dissipation is indeed 2800 mW
A: At what frequency does the Maximum-Operating-Temperature?
Q: The product Maximum-Operating-Temperature is + 150 C.
A: What is the Minimum-Operating-Temperature of the product?
Q: The Minimum-Operating-Temperature of the product is - 65 C.
A: At what frequency does the Collector-Emitter-Voltage-VCEO-Max?
Q: The product Collector-Emitter-Voltage-VCEO-Max is 500 V.
A: At what frequency does the Transistor-Polarity?
Q: The product Transistor-Polarity is NPN.
A: What is the Collector-Emitter-Saturation-Voltage of the product?
Q: The Collector-Emitter-Saturation-Voltage of the product is 1 V.
A: At what frequency does the Emitter-Base-Voltage-VEBO?
Q: The product Emitter-Base-Voltage-VEBO is 12 V.
A: Is the cutoff frequency of the product Maximum-DC-Collector-Current?
Q: Yes, the product's Maximum-DC-Collector-Current is indeed 2.4 A
A: What is the DC-Collector-Base-Gain-hfe-Min of the product?
Q: The DC-Collector-Base-Gain-hfe-Min of the product is 17 at 500 uA at 2 V 25 at 200 mA at 5 V 12 at 500 mA at 5 V 4 at 1.5 A at 5 V.