| Mfr. #: | STY80NM60N |
|---|---|
| Hersteller: | STMicroelectronics |
| Beschreibung: | MOSFET N-channel 600 V, 74A Power II Mdmesh |
| Lebenszyklus: | Neu von diesem Hersteller. |
| Datenblatt: | STY80NM60N Datenblatt |
RoHS compliant with Details Input bias current of Through Hole Package type is TO-247-3 Single 1 Channel for basic signal processing The transistor polarity is N-Channel. 600 V is the Vds - Drain-Source Breakdown Voltage Continuous Drain Current identified as 74 A; The Rds On - Drain-Source Resistance of the product is 35 mOhms. The Vgs - Gate-Source Voltage attribute for this product is 25 V. Maximum Operating Temperature: + 150 C Si is the technology used. Tube is the packaging method for this product Enhancement Channel Mode Configuration Single Fall Time of 200 ns - 55 C minimum operating temperature The power dissipation is 447 W. 65 ns Rise Time Product belongs to the N-channel MDmesh series. 1 N-Channel Transistor Type Typical Turn-Off Delay Time of 440 ns; The 50 ns typical turn-on delay time The Unit Weight is 1.340411 oz.
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
STY80NM60N Specifications
A: At what frequency does the RoHS?
Q: The product RoHS is Details.
A: What is the Mounting Style of the product?
Q: The Mounting Style of the product is Through Hole.
A: What is the Package / Case of the product?
Q: The Package / Case of the product is TO-247-3.
A: Is the cutoff frequency of the product Number of Channels?
Q: Yes, the product's Number of Channels is indeed 1 Channel
A: At what frequency does the Transistor Polarity?
Q: The product Transistor Polarity is N-Channel.
A: At what frequency does the Vds - Drain-Source Breakdown Voltage?
Q: The product Vds - Drain-Source Breakdown Voltage is 600 V.
A: Is the cutoff frequency of the product Id - Continuous Drain Current?
Q: Yes, the product's Id - Continuous Drain Current is indeed 74 A
A: What is the Rds On - Drain-Source Resistance of the product?
Q: The Rds On - Drain-Source Resistance of the product is 35 mOhms.
A: What is the Vgs - Gate-Source Voltage of the product?
Q: The Vgs - Gate-Source Voltage of the product is 25 V.
A: Is the cutoff frequency of the product Maximum Operating Temperature?
Q: Yes, the product's Maximum Operating Temperature is indeed + 150 C
A: At what frequency does the Technology?
Q: The product Technology is Si.
A: What is the Packaging of the product?
Q: The Packaging of the product is Tube.
A: What is the Channel Mode of the product?
Q: The Channel Mode of the product is Enhancement.
A: Is the cutoff frequency of the product Configuration?
Q: Yes, the product's Configuration is indeed Single
A: What is the Fall Time of the product?
Q: The Fall Time of the product is 200 ns.
A: Is the cutoff frequency of the product Minimum Operating Temperature?
Q: Yes, the product's Minimum Operating Temperature is indeed - 55 C
A: Is the cutoff frequency of the product Pd - Power Dissipation?
Q: Yes, the product's Pd - Power Dissipation is indeed 447 W
A: What is the Rise Time of the product?
Q: The Rise Time of the product is 65 ns.
A: What is the Series of the product?
Q: The Series of the product is N-channel MDmesh.
A: At what frequency does the Transistor Type?
Q: The product Transistor Type is 1 N-Channel.
A: At what frequency does the Typical Turn-Off Delay Time?
Q: The product Typical Turn-Off Delay Time is 440 ns.
A: What is the Typical Turn-On Delay Time of the product?
Q: The Typical Turn-On Delay Time of the product is 50 ns.
A: Is the cutoff frequency of the product Unit Weight?
Q: Yes, the product's Unit Weight is indeed 1.340411 oz