| Mfr. #: | TIP35CW |
|---|---|
| Hersteller: | STMicroelectronics |
| Beschreibung: | Bipolar Transistors - BJT HIGH POWER TRANS |
| Lebenszyklus: | Neu von diesem Hersteller. |
| Datenblatt: | TIP35CW Datenblatt |


Product belongs to the 500V Transistors series. Tube is the packaging method for this product Weight of 1.340411 oz Through Hole Mounting-Style TO-247-3 Through Hole mounting type Supplier device package: TO-247-3 Configuration Single Transistor type: NPN Maximum current collector Ic is 25A . Maximum collector-emitter breakdown voltage of 100V DC current gain minimum (hFE) of Ic/Vce at 10 @ 15A, 4V. Product Attribute: Vce-Saturation-Max-Ib-Ic: 4V @ 5A, 25A Power-off control: 125000 mW Maximum operating temperature of + 150 C Minimum operating temperature: - 65 C Rated VCEO up to 100 V The transistor polarity is NPN PNP. The 100 V voltage rating is 40 V. 5 V rating of 5 V Max DC collector current: 25 A Gain-Bandwidth-Product: 3 MHz Minimum hfe for DC collector-base gain is 25.

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

TIP35CW Specifications
A: What is the Series of the product?
Q: The Series of the product is 500V Transistors.
A: At what frequency does the Packaging?
Q: The product Packaging is Tube.
A: Is the cutoff frequency of the product Unit-Weight?
Q: Yes, the product's Unit-Weight is indeed 1.340411 oz
A: What is the Mounting-Style of the product?
Q: The Mounting-Style of the product is Through Hole.
A: Is the cutoff frequency of the product Package-Case?
Q: Yes, the product's Package-Case is indeed TO-247-3
A: At what frequency does the Mounting-Type?
Q: The product Mounting-Type is Through Hole.
A: What is the Supplier-Device-Package of the product?
Q: The Supplier-Device-Package of the product is TO-247-3.
A: Is the cutoff frequency of the product Configuration?
Q: Yes, the product's Configuration is indeed Single
A: What is the Transistor-Type of the product?
Q: The Transistor-Type of the product is NPN.
A: What is the Current-Collector-Ic-Max of the product?
Q: The Current-Collector-Ic-Max of the product is 25A.
A: What is the Voltage-Collector-Emitter-Breakdown-Max of the product?
Q: The Voltage-Collector-Emitter-Breakdown-Max of the product is 100V.
A: At what frequency does the DC-Current-Gain-hFE-Min-Ic-Vce?
Q: The product DC-Current-Gain-hFE-Min-Ic-Vce is 10 @ 15A, 4V.
A: Is the cutoff frequency of the product Vce-Saturation-Max-Ib-Ic?
Q: Yes, the product's Vce-Saturation-Max-Ib-Ic is indeed 4V @ 5A, 25A
A: Is the cutoff frequency of the product Pd-Power-Dissipation?
Q: Yes, the product's Pd-Power-Dissipation is indeed 125000 mW
A: At what frequency does the Maximum-Operating-Temperature?
Q: The product Maximum-Operating-Temperature is + 150 C.
A: Is the cutoff frequency of the product Minimum-Operating-Temperature?
Q: Yes, the product's Minimum-Operating-Temperature is indeed - 65 C
A: At what frequency does the Collector-Emitter-Voltage-VCEO-Max?
Q: The product Collector-Emitter-Voltage-VCEO-Max is 100 V.
A: Is the cutoff frequency of the product Transistor-Polarity?
Q: Yes, the product's Transistor-Polarity is indeed NPN PNP
A: Is the cutoff frequency of the product Collector-Base-Voltage-VCBO?
Q: Yes, the product's Collector-Base-Voltage-VCBO is indeed 100 V
A: What is the Emitter-Base-Voltage-VEBO of the product?
Q: The Emitter-Base-Voltage-VEBO of the product is 5 V.
A: What is the Maximum-DC-Collector-Current of the product?
Q: The Maximum-DC-Collector-Current of the product is 25 A.
A: At what frequency does the Gain-Bandwidth-Product-fT?
Q: The product Gain-Bandwidth-Product-fT is 3 MHz.
A: At what frequency does the DC-Collector-Base-Gain-hfe-Min?
Q: The product DC-Collector-Base-Gain-hfe-Min is 25.