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475-102N21A-00

475-102N21A-00
Mfr. #:
475-102N21A-00
Hersteller:
Littelfuse
Beschreibung:
RF MOSFET Transistors DE-475 21A 1000V N Channel MOSFET
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
475-102N21A-00 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
475-102N21A-00 Datasheet475-102N21A-00 Datasheet (P4-P5)
ECAD Model:
Mehr Informationen:
475-102N21A-00 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
IXYS
Produktkategorie:
HF-MOSFET-Transistoren
RoHS:
Y
Polarität des Transistors:
N-Kanal
Technologie:
Si
Id - Kontinuierlicher Drainstrom:
24 A
Vds - Drain-Source-Durchbruchspannung:
1000 V
Rds On - Drain-Source-Widerstand:
450 mOhms
Ausgangsleistung:
1.8 kW
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Montageart:
SMD/SMT
Paket / Koffer:
SMD-6
Verpackung:
Rohr
Arbeitsfrequenz:
30 MHz
Serie:
DE
Typ:
HF-Leistungs-MOSFET
Marke:
IXYS
Vorwärtstranskonduktanz - Min:
12 S
Anzahl der Kanäle:
1 Channel
Produktart:
HF-MOSFET-Transistoren
Qg - Gate-Ladung:
155 nC
Werkspackungsmenge:
20
Unterkategorie:
MOSFETs
Vgs - Gate-Source-Spannung:
20 V
Vgs th - Gate-Source-Schwellenspannung:
3.5 V
Teil # Aliase:
DE475-102N21A VREF
Tags
475-10, 475-1, 475
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Power MOSFETs
IXYS Power MOSFETs are designed for RF applications below 100MHz, linear applications, and high-power, high-frequency, and high-speed switching applications. These Power MOSFETs are available in a wide variety of standard industrial package options for a broad spectrum of market needs, electrical design requirements, and mechanical and mounting specifications.
Teil # Mfg. Beschreibung Aktie Preis
475-102N21A-00
DISTI # V36:1790_14391253		IXYS CorporationNOT RECOMMENDED FOR REFLOW0
    475-102N21A-00
    DISTI # 475-102N21A-00-ND    		IXYS CorporationRF MOSFET N-CHANNEL DE475
    RoHS: Not compliant
    Min Qty: 1
    Container: Tube    		On Order
    • 100:$26.0384
    • 40:$28.0160
    • 20:$30.4880
    • 1:$32.9600
    475-102N21A-00
    DISTI # 747-475-102N21A-00    		IXYS CorporationRF MOSFET Transistors DE-475 21A 1000V N Channel MOSFET
    RoHS: Compliant    		0
    • 1:$37.9000
    • 5:$37.0500
    • 10:$35.0600
    • 25:$32.9600
    • 50:$30.4900
    • 100:$29.9400
    • 250:$25.5400
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    		 INDUCTOR, 22UH, 1.7A, 20%, SHIELDED
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    4500
    Menge eingeben:
    Der aktuelle Preis von 475-102N21A-00 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    37,90 $
    37,90 $
    5
    37,05 $
    185,25 $
    10
    35,06 $
    350,60 $
    25
    32,96 $
    824,00 $
    50
    30,49 $
    1 524,50 $
    100
    29,94 $
    2 994,00 $
    250
    25,54 $
    6 385,00 $
    500
    22,25 $
    11 125,00 $
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