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IRLHS6376TR2PBF

IRLHS6376TR2PBF
Mfr. #:
IRLHS6376TR2PBF
Hersteller:
Infineon / IR
Beschreibung:
MOSFET MOSFT DUAL N-Ch 30V 63mOhm 2.5V cpbl
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IRLHS6376TR2PBF Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
PQFN-6
Anzahl der Kanäle:
2 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
30 V
Id - Kontinuierlicher Drainstrom:
3.6 A
Rds On - Drain-Source-Widerstand:
63 mOhms
Vgs th - Gate-Source-Schwellenspannung:
12 V
Vgs - Gate-Source-Spannung:
12 V
Qg - Gate-Ladung:
2.8 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
6.6 W
Aufbau:
Dual
Verpackung:
Spule
Höhe:
0.9 mm
Länge:
2 mm
Transistortyp:
2 N-Channel
Breite:
2 mm
Marke:
Infineon / IR
Vorwärtstranskonduktanz - Min:
8.8 S
Abfallzeit:
9.4 ns
Produktart:
MOSFET
Anstiegszeit:
11 ns
Werkspackungsmenge:
400
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
11 nS
Typische Einschaltverzögerungszeit:
4.4 nS
Teil # Aliase:
SP001550442
Gewichtseinheit:
0.017637 oz
Tags
IRLHS6376T, IRLHS637, IRLHS63, IRLHS6, IRLHS, IRLH, IRL
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Dual N-Channel 30 V 63 mOhm 2.8 nC HEXFET® Power Mosfet - PQFN 2 x 2 mm
***ernational Rectifier
30V Dual N-Channel HEXFET Power MOSFET in a 2mm X 2mm PQFN package
***et
Trans MOSFET N-CH 30V 3.6A 6-Pin PQFN EP T/R
***ied Electronics & Automation
MOSFET Dual N-Channel 30V 3.6A PQFN6EP
***ark
DUAL N CH, 30V, 3.6A, PQFN-6; Transistor Polarity:N Channel; Continuous Drain Current Id, N Channel:3.6A; Drain Source Voltage Vds, N Channel:30V; On Resistance Rds(on), N Channel:0.048ohm; Rds(on) Test Voltage Vgs:4.5V ;RoHS Compliant: Yes
***nell
MOSFET,NN CH,30V,3.6A,PQFN22; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:800mV; Power Dissipation Pd:1.5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:QFN; No. of Pins:6; SVHC:No SVHC (20-Jun-2011); Continuous Drain Current Id:3.6A; Drain Source Voltage Vds:30V; Module Configuration:Dual; On Resistance Rds(on):0.048ohm; Power Dissipation Pd:1.5W
Teil # Mfg. Beschreibung Aktie Preis
IRLHS6376TR2PBF
DISTI # IRLHS6376TR2PBFCT-ND		Infineon Technologies AGMOSFET 2N-CH 30V 3.6A PQFN
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Limited Supply - Call
    IRLHS6376TR2PBF
    DISTI # IRLHS6376TR2PBFDKR-ND    		Infineon Technologies AGMOSFET 2N-CH 30V 3.6A PQFN
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		Limited Supply - Call
      IRLHS6376TR2PBF
      DISTI # 942-IRLHS6376TR2PBF      		Infineon Technologies AGMOSFET MOSFT DUAL N-Ch 30V 63mOhm 2.5V cpbl
      RoHS: Compliant      		0
        Bild Teil # Beschreibung
        IRLHS6376TR2PBF

        Mfr.#: IRLHS6376TR2PBF

        OMO.#: OMO-IRLHS6376TR2PBF

        		 MOSFET MOSFT DUAL N-Ch 30V 63mOhm 2.5V cpbl
        IRLHS6342TR2PBF

        Mfr.#: IRLHS6342TR2PBF

        OMO.#: OMO-IRLHS6342TR2PBF-INFINEON-TECHNOLOGIES

        		 MOSFET N-CH 30V 8.7A PQFN
        IRLHS6342TRPBF

        Mfr.#: IRLHS6342TRPBF

        OMO.#: OMO-IRLHS6342TRPBF-INFINEON-TECHNOLOGIES

        		 MOSFET N-CH 30V 8.7A PQFN
        IRLHS6342TRPBF.

        Mfr.#: IRLHS6342TRPBF.

        OMO.#: OMO-IRLHS6342TRPBF--1190

        		 Continuous Drain Current Id:8.7A, Drain Source Voltage Vds:30V, Automotive Qualification Standard:- RoHS Compliant: Yes
        IRLHS6376PBF

        Mfr.#: IRLHS6376PBF

        OMO.#: OMO-IRLHS6376PBF-1190

        		 Neu und Original
        IRLHS6376TR2PBF

        Mfr.#: IRLHS6376TR2PBF

        OMO.#: OMO-IRLHS6376TR2PBF-INFINEON-TECHNOLOGIES

        		 MOSFET 2N-CH 30V 3.6A PQFN
        IRLHS6376TRPBF

        Mfr.#: IRLHS6376TRPBF

        OMO.#: OMO-IRLHS6376TRPBF-INFINEON-TECHNOLOGIES

        		 MOSFET 2N-CH 30V 3.6A PQFN
        IRLHS6376TRPBF-CUT TAPE

        Mfr.#: IRLHS6376TRPBF-CUT TAPE

        OMO.#: OMO-IRLHS6376TRPBF-CUT-TAPE-1190

        		 Neu und Original
        IRLHS6376TRPBF.

        Mfr.#: IRLHS6376TRPBF.

        OMO.#: OMO-IRLHS6376TRPBF--1190

        		 Transistor Polarity:Dual N Channel, Continuous Drain Current Id:3.6A, Drain Source Voltage Vds:30V, On Resistance Rds(on):0.048ohm, Rds(on) Test Voltage Vgs:4.5V, Threshold Voltage Vgs:800mV, Po
        IRLHS6342TR2PBF.

        Mfr.#: IRLHS6342TR2PBF.

        OMO.#: OMO-IRLHS6342TR2PBF--1190

        		 Neu und Original
        Verfügbarkeit
        Aktie:
        Available
        Auf Bestellung:
        3000
        Menge eingeben:
        Der aktuelle Preis von IRLHS6376TR2PBF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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