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If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| BSC014NE2LSIATMA1 DISTI # BSC014NE2LSIATMA1CT-ND | Infineon Technologies AG | MOSFET N-CH 25V 33A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | 10In Stock |
|
| BSC014NE2LSIATMA1 DISTI # BSC014NE2LSIATMA1DKR-ND | Infineon Technologies AG | MOSFET N-CH 25V 33A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | 10In Stock |
|
| BSC014NE2LSIATMA1 DISTI # BSC014NE2LSIATMA1TR-ND | Infineon Technologies AG | MOSFET N-CH 25V 33A TDSON-8 RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR) | On Order |
|
| BSC014NE2LSI DISTI # BSC014NE2LSI | Infineon Technologies AG | Trans MOSFET N-CH 25V 33A 8-Pin TDSON T/R (Alt: BSC014NE2LSI) RoHS: Compliant Min Qty: 5000 Container: Tape and Reel | Asia - 0 | |
| BSC014NE2LSI DISTI # BSC014NE2LSIATMA1 | Infineon Technologies AG | Trans MOSFET N-CH 25V 33A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC014NE2LSIATMA1) RoHS: Compliant Min Qty: 5000 Container: Reel | Americas - 0 |
|
| BSC014NE2LSIATMA1 DISTI # 50Y1794 | Infineon Technologies AG | MOSFET, N-CH, 25V, 100A, 150DEG C, 74W,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:25V,On Resistance Rds(on):0.0012ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V RoHS Compliant: Yes | 0 |
|
| BSC014NE2LSI DISTI # 726-BSC014NE2LSIXT | Infineon Technologies AG | MOSFET N-Ch 25V 100A TDSON-8 OptiMOS RoHS: Compliant | 243 |
|
| BSC014NE2LSIATMA1 DISTI # 726-BSC014NE2LSI | Infineon Technologies AG | MOSFET N-Ch 25V 100A TDSON-8 OptiMOS RoHS: Compliant | 14 |
|
| BSC014NE2LSIXT DISTI # 726-BSC014NE2LSIATMA | Infineon Technologies AG | MOSFET N-Ch 25V 100A TDSON-8 OptiMOS RoHS: Compliant | 13 |
|
| BSC014NE2LSIATMA1 | Infineon Technologies AG | Power Field-Effect Transistor, 33A I(D), 25V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | 50 |
|
| BSC014NE2LSIATMA1 DISTI # 2480708 | Infineon Technologies AG | MOSFET, N-CH, 25V, 100A, TDSON-8 RoHS: Compliant | 8686 |
|
| BSC014NE2LSIATMA1 DISTI # 2480708RL | Infineon Technologies AG | MOSFET, N-CH, 25V, 100A, TDSON-8 RoHS: Compliant | 0 |
|
| BSC014NE2LSIATMA1 DISTI # 2480708 | Infineon Technologies AG | MOSFET, N-CH, 25V, 100A, TDSON-8 RoHS: Compliant | 3685 |
|
| BSC014NE2LSI | Infineon Technologies AG | 25V,1.4m,100A,N-Channel Power MOSFET | 34 |
|
| Bild | Teil # | Beschreibung |
|---|---|---|
|
Mfr.#: BSC014N06NS OMO.#: OMO-BSC014N06NS |
MOSFET N-Ch 60V 100A TDSON-8 OptiMOS |
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Mfr.#: BSC014N04LSATMA1 OMO.#: OMO-BSC014N04LSATMA1 |
MOSFET N-Ch 40V 100A TDSON-8 FL OptiMOS |
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Mfr.#: BSC014NE2LSIATMA1 OMO.#: OMO-BSC014NE2LSIATMA1 |
MOSFET N-Ch 25V 100A TDSON-8 OptiMOS |
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Mfr.#: BSC014N03MS G OMO.#: OMO-BSC014N03MS-G |
MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3M |
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Mfr.#: BSC014N03LSGATMA1 OMO.#: OMO-BSC014N03LSGATMA1 |
MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3 |
|
Mfr.#: BSC014N03LS G OMO.#: OMO-BSC014N03LS-G-1190 |
Trans MOSFET N-CH 30V 34A 8-Pin TDSON EP |
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Mfr.#: BSC014N03LSG OMO.#: OMO-BSC014N03LSG-1190 |
MOSFET, N-CH, 30V, 100A, TDSON-8 |
|
Mfr.#: BSC014N03LSGATMA1 |
MOSFET N-CH 30V 100A TDSON-8 |
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|
Mfr.#: BSC014N03LSGATMA1 , TDA1 |
Neu und Original |
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Mfr.#: BSC014N04LSATMA1 |
MOSFET N-CH 40V 32A TDSON-8 |
