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Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.
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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| SIHD7N60ET-GE3 DISTI # 78-SIHD7N60ET-GE3 | Vishay Intertechnologies | MOSFET 600V 600mOhm@10V 7A N-Ch E-SRS RoHS: Compliant | 0 |
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| Bild | Teil # | Beschreibung |
|---|---|---|
|
Mfr.#: SIHD7N60ET1-GE3 OMO.#: OMO-SIHD7N60ET1-GE3 |
MOSFET 600V 600mOhm@10V 7A N-Ch E-SRS |
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Mfr.#: SIHD7N60E-E3 OMO.#: OMO-SIHD7N60E-E3 |
MOSFET 600V Vds 30V Vgs DPAK (TO-252) |
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Mfr.#: SIHD7N60ET5-GE3 OMO.#: OMO-SIHD7N60ET5-GE3 |
MOSFET 600V Vds E Series DPAK TO-252 |
|
Mfr.#: SIHD7N60E-E3 OMO.#: OMO-SIHD7N60E-E3-VISHAY |
RF Bipolar Transistors MOSFET 600V 600mOhm@10V 7A N-Ch E-SRS |
|
Mfr.#: SIHD7N60ET-GE3 OMO.#: OMO-SIHD7N60ET-GE3-317 |
RF Bipolar Transistors MOSFET 600V 600mOhm@10V 7A N-Ch E-SRS |
|
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Mfr.#: SIHD7N60E-GE3-CUT TAPE |
Neu und Original |
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Mfr.#: SIHD7N60E-GE3 OMO.#: OMO-SIHD7N60E-GE3-VISHAY |
MOSFET N-CH 600V 7A TO-252 |
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Mfr.#: SIHD7N60EGE3 OMO.#: OMO-SIHD7N60EGE3-1190 |
Power Field-Effect Transistor, 7A I(D), 609V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA |
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Mfr.#: SIHD7N60ET4-GE3 OMO.#: OMO-SIHD7N60ET4-GE3-VISHAY |
MOSFET N-CH 600V 7A TO252AA |
|
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Mfr.#: SIHD7N60ET5-GE3 OMO.#: OMO-SIHD7N60ET5-GE3-VISHAY |
MOSFET N-CH 600V 7A TO252AA |
