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SPD07N20GBTMA1

SPD07N20GBTMA1
Mfr. #:
SPD07N20GBTMA1
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET N-Ch 200V 7A DPAK-2
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SPD07N20GBTMA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TO-252-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
200 V
Id - Kontinuierlicher Drainstrom:
7 A
Rds On - Drain-Source-Widerstand:
300 mOhms
Vgs th - Gate-Source-Schwellenspannung:
2.1 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
31.5 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Pd - Verlustleistung:
40 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
SIPMOS
Verpackung:
Spule
Höhe:
2.3 mm
Länge:
6.5 mm
Transistortyp:
1 N-Channel
Breite:
6.22 mm
Marke:
Infineon-Technologien
Vorwärtstranskonduktanz - Min:
3 S
Abfallzeit:
30 ns
Produktart:
MOSFET
Anstiegszeit:
40 ns
Werkspackungsmenge:
2500
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
55 ns
Typische Einschaltverzögerungszeit:
10 ns
Teil # Aliase:
G SP000449008 SPD07N20 SPD07N20GXT
Gewichtseinheit:
0.139332 oz
Tags
SPD07N20G, SPD07N2, SPD07N, SPD07, SPD0, SPD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 200V 7A 3-Pin(2+Tab) DPAK T/R
***ineon
Infineon's 200V OptiMOS products are performance leading benchmark technologies, perfectly suited for synchronous rectification in 48V systems,DC-DC converters, uninterruptable power supplies (UPS) and inverters for DC motor drives. | Summary of Features: Industrys lowest R DS(on); Lowest Q g and Q gd; Worlds lowest FOM RoHS compliant halogen free MSL 1 rated | Benefits: Highest efficiency; Highest power density; Lowest board space consumption; Minimal device paralleling required; System cost improvement; Enviromentally friendly; Easy-to-design-in products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V110V systems; Isolated DC-DC converters; Lighting for 110V AC networks; HID lamps; Class D audio amplifiers; Uninterruptable power supplies (UPS); LED lighting power supply
***nell
MOSFET, N-CH, 200V, 7A, TO-252-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 7A; Drain Source Voltage Vds: 200V; On Resistance Rds(on): 0.3ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 40W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***icroelectronics
N-channel 200 V, 0.35 Ohm typ., 7 A Power MOSFET in DPAK package
***ure Electronics
N-Channel 200 V 0.4 Ohm 45 W Surface Mount MESH Overlay Power Mosfet - TO-252
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 7A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***nell
MOSFET, N CH, 200V, 7A, DPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:7A; Drain Source Voltage Vds:200V; On Resistance Rds(on):0.35ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:45W; Transistor Case Style:TO-252; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
***ter Electronics
N-CH/LL/100V/8.4A/0.2OHM@VGS=5V/Substitute of IRLR120TM
***Yang
MOSFET 100V N-Channel a-FET Logic Level - Bulk
***nell
MOSFET, 100V, 8.4A; Transistor Polarity: N Channel; Continuous Drain Current Id: 8.4A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.22ohm; Rds(on) Test Voltage Vgs: 5V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 35W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Termination Type: Surface Mount Device; Transistor Type: Power MOSFET; Voltage Vds Typ: 100V; Voltage Vgs Rds on Measurement: 5V
***ure Electronics
Single P-Channel 60 V 155 mOhm Surface Mount TrenchFET Power Mosfet - TO-252
***ment14 APAC
MOSFET, P-CH, 20V, -8.2A, TO-252; Transistor Polarity:P Channel; Continuous Drain Current Id:-8.2A; Source Voltage Vds:-60V; On Resistance
***ark
MOSFET, P-CH, 60V, 8.2A, 150DEG C, 20.8W; Channel Type:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:8.2A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V RoHS Compliant: Yes
***nell
MOSFET, P-CH, 20V, -8.2A, TO-252; Transistor Polarity: P Channel; Continuous Drain Current Id: -8.2A; Drain Source Voltage Vds: -60V; On Resistance Rds(on): 0.125ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -2V; Power Dissipation Pd: 20.8W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: TrenchFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (20-Jun-2016)
***-Wing Technology
Tape & Reel (TR) Surface Mount P-Channel Single Mosfet Transistor 7.8A Tc 7.8A 2.5W 20ns
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 7.8A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
***nell
MOSFET, P, 60V, 7.8A; Transistor Polarity: P Channel; Continuous Drain Current Id: -7.8A; Drain Source Voltage Vds: -60V; On Resistance Rds(on): 0.28ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -4V; Power Dissipation Pd: 32W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Termination Type: Surface Mount Device; Transistor Type: Power MOSFET; Voltage Vds Typ: -60V; Voltage Vgs Rds on Measurement: -10V
***emi
N-Channel PowerTrench® MOSFET 200V 3.6A, 130mΩ
***r Electronics
Power Field-Effect Transistor, 3.6A I(D), 200V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
***ment14 APAC
MOSFET, N, SMD, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:3.6A; Drain Source Voltage Vds:200V; On Resistance Rds(on):130mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:70mW; Transistor Case Style:TO-252; No. of Pins:2; SVHC:No SVHC (19-Dec-2011); Current Id Max:3.6A; Package / Case:DPAK; Power Dissipation Pd:70mW; Pulse Current Idm:20A; Termination Type:SMD; Voltage Vds Typ:200V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
***rchild Semiconductor
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.
***ure Electronics
N-Channel 500 V 600 mOhm 32 nC CoolMOS™ Power Mosfet - PG-TO252-3-1
*** Source Electronics
Trans MOSFET N-CH 500V 7.6A 3-Pin(2+Tab) DPAK T/R / MOSFET N-CH 500V 7.6A DPAK
***ment14 APAC
MOSFET, N, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:7.6A; Drain Source Voltage Vds:560V; On Resistance Rds(on):600mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:83W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-252; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:7.6A; Package / Case:TO-252; Power Dissipation Pd:83W; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:560V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
***ineon
Replacement for 500V CoolMOS C3 is 500V CoolMOS CE >> Click & go to 500V CoolMOS CE | Summary of Features: Low specific on-state resistance; (R on*A); Very low energy storage in output capacitance (E oss) @400V; Low gate charge (Q g); Fieldproven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding cost/performance; High reliability; Ease-of-use | Target Applications: Server; Telecom; Consumer; PC power; Adapter
Teil # Mfg. Beschreibung Aktie Preis
SPD07N20GBTMA1
DISTI # SPD07N20GBTMA1TR-ND		Infineon Technologies AGMOSFET N-CH 200V 7A TO252
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		Limited Supply - Call
    SPD07N20GBTMA1
    DISTI # SPD07N20GBTMA1CT-ND    		Infineon Technologies AGMOSFET N-CH 200V 7A TO252
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Limited Supply - Call
      SPD07N20GBTMA1
      DISTI # SPD07N20GBTMA1DKR-ND      		Infineon Technologies AGMOSFET N-CH 200V 7A TO252
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®      		Limited Supply - Call
        SPD07N20GBTMA1
        DISTI # 726-SPD07N20GBTMA1        		Infineon Technologies AGMOSFET N-Ch 200V 7A DPAK-2
        RoHS: Compliant        		0
          SPD07N20 G
          DISTI # 726-SPD07N20G          		Infineon Technologies AGMOSFET N-Ch 200V 7A DPAK-2
          RoHS: Compliant          		0
            Bild Teil # Beschreibung
            SPD07N20GBTMA1

            Mfr.#: SPD07N20GBTMA1

            OMO.#: OMO-SPD07N20GBTMA1

            		 MOSFET N-Ch 200V 7A DPAK-2
            SPD07N20

            Mfr.#: SPD07N20

            OMO.#: OMO-SPD07N20

            		 MOSFET N-Ch 200V 7A DPAK-2
            SPD07N20

            Mfr.#: SPD07N20

            OMO.#: OMO-SPD07N20-INFINEON-TECHNOLOGIES

            		 MOSFET N-CH 200V 7A TO-252
            SPD07N20 G

            Mfr.#: SPD07N20 G

            OMO.#: OMO-SPD07N20-G-1190

            		 MOSFET N-Ch 200V 7A DPAK-2
            SPD07N20G

            Mfr.#: SPD07N20G

            OMO.#: OMO-SPD07N20G-1190

            		 Neu und Original
            SPD07N20GBTMA1

            Mfr.#: SPD07N20GBTMA1

            OMO.#: OMO-SPD07N20GBTMA1-INFINEON-TECHNOLOGIES

            		 MOSFET N-CH 200V 7A TO252
            Verfügbarkeit
            Aktie:
            Available
            Auf Bestellung:
            5500
            Menge eingeben:
            Der aktuelle Preis von SPD07N20GBTMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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