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SIA906EDJ-T1-GE3

SIA906EDJ-T1-GE3
Mfr. #:
SIA906EDJ-T1-GE3
Hersteller:
Vishay
Beschreibung:
IGBT Transistors MOSFET 20V 4.5A 7.8W 46mohm @ 4.5V
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SIA906EDJ-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
SIA906EDJ-T1-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller
Vishay Siliconix
Produktkategorie
FETs - Arrays
Serie
GrabenFETR
Verpackung
Digi-ReelR Alternative Verpackung
Teil-Aliasnamen
SIA906EDJ-GE3
Gewichtseinheit
0.000988 oz
Montageart
SMD/SMT
Paket-Koffer
PowerPAKR SC-70-6 Dual
Technologie
Si
Betriebstemperatur
-55°C ~ 150°C (TJ)
Befestigungsart
Oberflächenmontage
Anzahl der Kanäle
2 Channel
Lieferanten-Geräte-Paket
PowerPAKR SC-70-6 Dual
Aufbau
Dual
FET-Typ
2 N-Channel (Dual)
Leistung max
7.8W
Transistor-Typ
2 N-Channel
Drain-zu-Source-Spannung-Vdss
20V
Eingangskapazität-Ciss-Vds
350pF @ 10V
FET-Funktion
Logik-Level-Gate
Strom-Dauer-Drain-Id-25°C
4.5A
Rds-On-Max-Id-Vgs
46 mOhm @ 3.9A, 4.5V
Vgs-th-Max-Id
1.4V @ 250μA
Gate-Lade-Qg-Vgs
12nC @ 10V
Pd-Verlustleistung
1.9 W
Maximale-Betriebstemperatur
+ 150 C
Mindest-Betriebstemperatur
- 55 C
Abfallzeit
12 ns
Anstiegszeit
12 ns
Vgs-Gate-Source-Spannung
12 V
ID-Dauer-Drain-Strom
4.5 A
Vds-Drain-Source-Breakdown-Voltage
20 V
Rds-On-Drain-Source-Widerstand
46 mOhms
Transistor-Polarität
N-Kanal
Typische-Ausschaltverzögerungszeit
18 ns 15 ns
Typische-Einschaltverzögerungszeit
10 ns 5 ns
Kanal-Modus
Erweiterung
Tags
SIA906EDJ-T, SIA906, SIA90, SIA9, SIA
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
SIA906EDJ-T1-GE3 N-channel MOSFET Transistor; 4.5 A; 20 V; 6-Pin SC-70
***Components
In a Pack of 20, N-Channel MOSFET, 4.5 A, 20 V, 6-Pin SOT-363 (SC-70) Vishay SIA906EDJ-T1-GE3
***ure Electronics
Dual N Channel 20 V 0.046 O 3.5 nC Power Mosfet - PowerPAK SC-70-6L Dual
***ark
Dual N-Channel 20-V (D-S) Mosfet Rohs Compliant: No
***et
Trans MOSFET N-CH 20V 4.5A 6-Pin PowerPAK SC-70 T/R
***et Europe
Trans MOSFET Array Dual N-CH 20V 4.5A 6-Pin SC-70
***C
MOSFET 20V 4.5A 7.8W 46mohm @ 4.5V
***i-Key
MOSFET 2N-CH 20V 4.5A SC70-6
***
DUAL N-CHANNEL 20-V (D-S) MOSF
***ment14 APAC
Prices include import duty and tax. MOSFET, DUAL N-CH, 20V, POWERPAK SC70; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:4.5A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.037ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1.4V; Power Dissipation Pd:7.8W; Transistor Case Style:PowerPAK SC70; No. of Pins:6Pins; Operating Temperature Max:150°C; Product Range:TrenchFET Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018)
***nell
MOSFET, DOPPIO CA-N 20V, 66A, SC70; Polarità Transistor:Canale N Doppio; Corrente Continua di Drain Id:4.5A; Tensione Drain Source Vds:20V; Resistenza di Attivazione Rds(on):0.037ohm; Tensione Vgs di Misura Rds(on):4.5V; Tensione di Soglia Vgs:1.4V; Dissipazione di Potenza Pd:7.8W; Modello Case Transistor:PowerPAK SC70; No. di Pin:6Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:TrenchFET Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (15-Jan-2018)
Integrated MOSFET Solutions
Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. 
Vishay Siliconix SiA906EDJ Dual N-Channel MOSFET
Vishay Siliconix SiA906EDJ Dual N-Channel MOSFET is designed to save space and increase power efficiency in portable electronics. It features the industry's lowest on-resistance for 20V (12V VGS) devices at 4.5V gate drives in the 2x2mm footprint area. The SiA906EDJ is optimized for load switches for portable applications and high frequency DC/DC converters.Learn More
Teil # Mfg. Beschreibung Aktie Preis
SIA906EDJ-T1-GE3
DISTI # V72:2272_09216851		Vishay IntertechnologiesTrans MOSFET N-CH 20V 4.5A 6-Pin PowerPAK SC-70 T/R
RoHS: Compliant		2513
  • 1000:$0.1827
  • 500:$0.2509
  • 250:$0.2943
  • 100:$0.2975
  • 25:$0.3735
  • 10:$0.3780
  • 1:$0.4588
SIA906EDJ-T1-GE3
DISTI # SIA906EDJ-T1-GE3TR-ND		Vishay SiliconixMOSFET 2N-CH 20V 4.5A SC70-6
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		On Order
  • 3000:$0.2302
SIA906EDJ-T1-GE3
DISTI # SIA906EDJ-T1-GE3CT-ND		Vishay SiliconixMOSFET 2N-CH 20V 4.5A SC70-6
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 1000:$0.2600
  • 500:$0.3365
  • 100:$0.4589
  • 10:$0.6120
  • 1:$0.7300
SIA906EDJ-T1-GE3
DISTI # SIA906EDJ-T1-GE3DKR-ND		Vishay SiliconixMOSFET 2N-CH 20V 4.5A SC70-6
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 1000:$0.2600
  • 500:$0.3365
  • 100:$0.4589
  • 10:$0.6120
  • 1:$0.7300
SIA906EDJ-T1-GE3
DISTI # 31003583		Vishay IntertechnologiesTrans MOSFET N-CH 20V 4.5A 6-Pin PowerPAK SC-70 T/R
RoHS: Compliant		2513
  • 1000:$0.1827
  • 500:$0.2509
  • 250:$0.2943
  • 100:$0.2975
  • 38:$0.3735
SIA906EDJ-T1-GE3
DISTI # SIA906EDJ-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 20V 4.5A 6-Pin PowerPAK SC-70 T/R (Alt: SIA906EDJ-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Asia - 0
    SIA906EDJ-T1-GE3
    DISTI # SIA906EDJ-T1-GE3    		Vishay IntertechnologiesTrans MOSFET Array Dual N-CH 20V 4.5A 6-Pin SC-70 (Alt: SIA906EDJ-T1-GE3)
    RoHS: Compliant
    Min Qty: 1    		Europe - 0
    • 1:€0.4059
    • 10:€0.2769
    • 25:€0.2379
    • 50:€0.2199
    • 100:€0.2119
    • 500:€0.2079
    • 1000:€0.2049
    SIA906EDJ-T1-GE3
    DISTI # SIA906EDJ-T1-GE3    		Vishay IntertechnologiesTrans MOSFET N-CH 20V 4.5A 6-Pin PowerPAK SC-70 T/R - Tape and Reel (Alt: SIA906EDJ-T1-GE3)
    RoHS: Not Compliant
    Min Qty: 3000
    Container: Reel    		Americas - 0
    • 3000:$0.1859
    • 6000:$0.1809
    • 12000:$0.1729
    • 18000:$0.1689
    • 30000:$0.1639
    SIA906EDJ-T1-GE3
    DISTI # 15R4841    		Vishay IntertechnologiesMOSFET, DUAL N CHANNEL, 20V, 4.5A, POWERPAK-6, FULL REEL,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:4.5A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.037ohm,Rds(on) Test Voltage Vgs:4.5V , RoHS Compliant: Yes0
    • 1:$0.2000
    • 3000:$0.1990
    • 6000:$0.1890
    • 12000:$0.1680
    SIA906EDJ-T1-GE3
    DISTI # 09X6410    		Vishay IntertechnologiesMOSFET, DUAL N CHANNEL, 20V, 4.5A, POWERPAK-6,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:4.5A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.037ohm,Rds(on) Test Voltage Vgs:4.5V,No. of Pins:6Pins , RoHS Compliant: Yes0
    • 1:$0.3910
    • 10:$0.3780
    • 100:$0.2990
    • 250:$0.2840
    • 500:$0.2650
    • 1000:$0.2120
    SIA906EDJ-T1-GE3
    DISTI # 70459578    		Vishay SiliconixSIA906EDJ-T1-GE3 N-channel MOSFET Transistor,4.5 A,20 V,6-Pin SC-70
    RoHS: Compliant    		0
    • 3000:$0.2600
    • 6000:$0.2520
    • 12000:$0.2440
    SIA906EDJ-T1-GE3Vishay IntertechnologiesDual N Channel 20 V 0.046 O 3.5 nC Power Mosfet - PowerPAK SC-70-6L Dual
    RoHS: Compliant    		15000Reel
    • 3000:$0.2600
    SIA906EDJ-T1-GE3
    DISTI # 781-SIA906EDJ-GE3    		Vishay IntertechnologiesMOSFET 20V Vds 12V Vgs PowerPAK SC-70
    RoHS: Compliant    		0
    • 1:$0.6400
    • 10:$0.4880
    • 100:$0.3620
    • 500:$0.2980
    • 1000:$0.2300
    • 3000:$0.2100
    • 6000:$0.1960
    SIA906EDJ-T1-GE3.Vishay IntertechnologiesMOSFET 20V 4.5A 7.8W 46mohm @ 4.5V
    RoHS: Compliant    		Americas - 2975
    • 25:$0.3220
    SIA906EDJ-T1-GE3Vishay IntertechnologiesMOSFET 20V Vds 12V Vgs PowerPAK SC-70
    RoHS: Compliant    		Americas - 3000
      SIA906EDJ-T1-GE3
      DISTI # 2889714      		Vishay IntertechnologiesMOSFET, DUAL N-CH, 20V, POWERPAK SC70
      RoHS: Compliant      		0
      • 5:$0.8630
      • 25:$0.7140
      • 100:$0.5600
      • 250:$0.4600
      • 500:$0.3910
      • 1000:$0.3700
      • 5000:$0.3570
      SIA906EDJ-T1-GE3
      DISTI # 2889714      		Vishay IntertechnologiesMOSFET, DUAL N-CH, 20V, POWERPAK SC70
      RoHS: Compliant      		0
      • 5:£0.3780
      • 25:£0.3260
      • 100:£0.2740
      • 250:£0.2720
      • 500:£0.2230
      SIA906EDJ-T1-GE3
      DISTI # C1S803601446282      		Vishay IntertechnologiesMOSFETs
      RoHS: Compliant      		2763
      • 250:$0.2939
      • 100:$0.2970
      • 25:$0.3725
      • 10:$0.3768
      SIA906EDJ-T1-GE3
      DISTI # XSFP00000063545      		Vishay Siliconix 
      RoHS: Compliant      		14133
      • 3000:$0.5200
      • 14133:$0.4727
      Bild Teil # Beschreibung
      SIA906EDJ-T1-GE3

      Mfr.#: SIA906EDJ-T1-GE3

      OMO.#: OMO-SIA906EDJ-T1-GE3

      		 MOSFET 20V Vds 12V Vgs PowerPAK SC-70
      SIA906EDJ-T1-GE3

      Mfr.#: SIA906EDJ-T1-GE3

      OMO.#: OMO-SIA906EDJ-T1-GE3-VISHAY

      		 IGBT Transistors MOSFET 20V 4.5A 7.8W 46mohm @ 4.5V
      SIA906EDJ

      Mfr.#: SIA906EDJ

      OMO.#: OMO-SIA906EDJ-1190

      		 Neu und Original
      SIA906EDJ-T1-E3

      Mfr.#: SIA906EDJ-T1-E3

      OMO.#: OMO-SIA906EDJ-T1-E3-1190

      		 Neu und Original
      SIA906EDJ-T4-GE3

      Mfr.#: SIA906EDJ-T4-GE3

      OMO.#: OMO-SIA906EDJ-T4-GE3-1190

      		 Neu und Original
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      4000
      Menge eingeben:
      Der aktuelle Preis von SIA906EDJ-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      0,23 $
      0,23 $
      10
      0,22 $
      2,22 $
      100
      0,21 $
      21,05 $
      500
      0,20 $
      99,40 $
      1000
      0,19 $
      187,10 $
      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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