IS66WVC4M16EALL-7010BLI

IS66WVC4M16EALL-7010BLI
Mfr. #:
IS66WVC4M16EALL-7010BLI
Hersteller:
ISSI
Beschreibung:
DRAM Pseudo SRAM 64Mb
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IS66WVC4M16EALL-7010BLI Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
IS66WVC4M16EALL-7010BLI Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
ISSI
Produktkategorie:
DRAM
RoHS:
Y
Typ:
PSRAM (Psuedo-SRAM)
Datenbusbreite:
16 bit
Organisation:
4 M x 16
Paket / Koffer:
VFBGA-54
Speichergröße:
64 Mbit
Maximale Taktfrequenz:
104 MHz
Zugriffszeit:
70 ns
Versorgungsspannung - Max.:
1.95 V
Versorgungsspannung - Min.:
1.7 V
Versorgungsstrom - Max.:
30 mA
Minimale Betriebstemperatur:
- 40 C
Maximale Betriebstemperatur:
+ 85 C
Serie:
IS66WVC4M16EALL
Marke:
ISSI
Montageart:
SMD/SMT
Feuchtigkeitsempfindlich:
ja
Produktart:
DRAM
Werkspackungsmenge:
480
Unterkategorie:
Speicher & Datenspeicherung
Gewichtseinheit:
0.003034 oz
Tags
IS66WVC4M16EA, IS66WVC4M16E, IS66WVC4, IS66WVC, IS66WV, IS66W, IS66, IS6
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    N***V
    N***V
    RU

    All ok.

    2019-07-11
    I***v
    I***v
    UZ

    The goods are received on time and in good quality.Long live the communist party of china!Goods received on time and in good quality.Long live the chinese communist party!

    2019-05-29
***
PSRAM (Pseudo SRAM) Memory IC 64Mb (4M x 16) Parallel 7 ns 54-VFBGA (6x8)
***I SCT
Cellular RAM Pseudo SRAM, 4Mx16, 1.7 to 1.95V, 70ns, VFBGA-54
***ical
PSRAM Async Single Port 64M-bit 4M x 16 70ns 54-Pin VFBGA
***ark
64Mb,Pseudo SRAM,Asynch/Page/Burst CRAM 1.5,4M x 16,70ns,1.7v
***i-Key
IC PSRAM 64MBIT PARALLEL 54VFBGA
Pseudo SRAM/CellularRAM
ISSI Pseudo SRAM/CellularRAM Devices offer the best of both DRAM and SRAM features. ISSI PSRAM/CellularRAM has a SRAM-like architecture. Unlike DRAM, there is a hidden re-fresh feature which does not require physical refresh. These CellularRAM devics are designed in accordance to the CellularRAM standards and are available in CRAM 1.5 and CRAM 2.0.
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Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1989
Menge eingeben:
Der aktuelle Preis von IS66WVC4M16EALL-7010BLI dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
5,79 $
5,79 $
10
5,28 $
52,80 $
25
5,14 $
128,50 $
100
4,61 $
461,00 $
250
4,60 $
1 150,00 $
500
4,31 $
2 155,00 $
1000
4,13 $
4 130,00 $
2500
3,80 $
9 500,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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