SI2307CDS-T1-E3

SI2307CDS-T1-E3
Mfr. #:
SI2307CDS-T1-E3
Hersteller:
Vishay / Siliconix
Beschreibung:
MOSFET -30V Vds 20V Vgs SOT-23
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SI2307CDS-T1-E3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI2307CDS-T1-E3 DatasheetSI2307CDS-T1-E3 Datasheet (P4-P6)SI2307CDS-T1-E3 Datasheet (P7-P9)
ECAD Model:
Mehr Informationen:
SI2307CDS-T1-E3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Vishay
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
SOT-23-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
P-Kanal
Vds - Drain-Source-Durchbruchspannung:
30 V
Id - Kontinuierlicher Drainstrom:
3.5 A
Rds On - Drain-Source-Widerstand:
88 mOhms
Vgs th - Gate-Source-Schwellenspannung:
1 V
Vgs - Gate-Source-Spannung:
10 V
Qg - Gate-Ladung:
4.1 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
1.8 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
TrenchFET
Verpackung:
Spule
Serie:
SI2
Transistortyp:
1 P-Channel
Marke:
Vishay / Siliconix
Vorwärtstranskonduktanz - Min:
7 S
Abfallzeit:
7.7 ns
Produktart:
MOSFET
Anstiegszeit:
13 ns
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
17 ns
Typische Einschaltverzögerungszeit:
5.5 ns
Teil # Aliase:
SI2307CDS-E3
Gewichtseinheit:
0.000282 oz
Tags
SI2307CDS-T, SI2307C, SI2307, SI230, SI23, SI2
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single P-Channel 30 V 1.1 W 6.2 nC Silicon Surface Mount Mosfet - SOT-23
***et
Trans MOSFET P-CH 30V 2.7A 3-Pin SOT-23 T/R
***ark
Transistor Polarity:p Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:2.7A; On Resistance Rds(On):0.073Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.5V Rohs Compliant: No
SI2 Series TrenchFET® Power MOSFETs
Vishay SI2 Series TrenchFET® Power MOSFETs are N-channel MOSFETs designed with 30V V(ds) and are 100% tested gate resistance(Rg). These MOSFETs have gate resistance tested for 1MHz frequency with 0.2Ω to 1.4Ω. These SI2 series MOSFETs operate from -55ºC to 150ºC junction and storage temperature. The SI2 series are ideal for DC/DC converter, Load switch, and power management.
Teil # Mfg. Beschreibung Aktie Preis
SI2307CDS-T1-E3
DISTI # V72:2272_09216789
Vishay IntertechnologiesTrans MOSFET P-CH 30V 2.7A 3-Pin SOT-23 T/R
RoHS: Compliant
22
  • 500:$0.2186
  • 250:$0.2498
  • 100:$0.2775
  • 25:$0.3666
  • 10:$0.4074
  • 1:$0.4780
SI2307CDS-T1-E3
DISTI # V36:1790_09216789
Vishay IntertechnologiesTrans MOSFET P-CH 30V 2.7A 3-Pin SOT-23 T/R
RoHS: Compliant
0
  • 3000:$0.1909
SI2307CDS-T1-E3
DISTI # SI2307CDS-T1-E3CT-ND
Vishay SiliconixMOSFET P-CH 30V 3.5A SOT23-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
15731In Stock
  • 1000:$0.1695
  • 500:$0.2194
  • 100:$0.2792
  • 10:$0.3740
  • 1:$0.4400
SI2307CDS-T1-E3
DISTI # SI2307CDS-T1-E3DKR-ND
Vishay SiliconixMOSFET P-CH 30V 3.5A SOT23-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
15731In Stock
  • 1000:$0.1695
  • 500:$0.2194
  • 100:$0.2792
  • 10:$0.3740
  • 1:$0.4400
SI2307CDS-T1-E3
DISTI # SI2307CDS-T1-E3TR-ND
Vishay SiliconixMOSFET P-CH 30V 3.5A SOT23-3
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
12000In Stock
  • 75000:$0.1226
  • 30000:$0.1239
  • 15000:$0.1307
  • 6000:$0.1404
  • 3000:$0.1501
SI2307CDS-T1-E3
DISTI # 32899050
Vishay IntertechnologiesTrans MOSFET P-CH 30V 2.7A 3-Pin SOT-23 T/R
RoHS: Compliant
688
  • 40:$0.4780
SI2307CDS-T1-E3
DISTI # SI2307CDS-T1-E3
Vishay IntertechnologiesTrans MOSFET P-CH 30V 2.7A 3-Pin SOT-23 T/R - Tape and Reel (Alt: SI2307CDS-T1-E3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel
Americas - 9000
  • 30000:$0.0855
  • 18000:$0.0879
  • 12000:$0.0904
  • 6000:$0.0942
  • 3000:$0.0971
SI2307CDS-T1-E3.
DISTI # 26AC3316
Vishay IntertechnologiesTransistor Polarity:P Channel,Continuous Drain Current Id:2.7A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.073ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:1.5V,Power Dissipation Pd:1.8W,No. of Pins:2Pins RoHS Compliant: No9000
  • 30000:$0.0880
  • 18000:$0.0910
  • 12000:$0.0930
  • 6000:$0.0970
  • 1:$0.1000
SI2307CDS-T1-E3
DISTI # 70459668
Vishay SiliconixMOSFET P-CH 30V 3.5A SOT23-3
RoHS: Compliant
0
  • 3000:$0.4200
  • 6000:$0.3670
SI2307CDS-T1-E3
DISTI # 781-SI2307CDS-E3
Vishay IntertechnologiesMOSFET -30V Vds 20V Vgs SOT-23
RoHS: Compliant
13067
  • 1:$0.5300
  • 10:$0.4050
  • 100:$0.3000
  • 500:$0.2460
  • 1000:$0.1900
  • 3000:$0.1730
  • 6000:$0.1620
  • 9000:$0.1510
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    SI2307CDS-T1-E3Vishay IntertechnologiesMOSFET -30V Vds 20V Vgs SOT-23
    RoHS: Compliant
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      Verfügbarkeit
      Aktie:
      12
      Auf Bestellung:
      1995
      Menge eingeben:
      Der aktuelle Preis von SI2307CDS-T1-E3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      0,53 $
      0,53 $
      10
      0,40 $
      4,05 $
      100
      0,30 $
      30,00 $
      500
      0,25 $
      123,00 $
      1000
      0,19 $
      190,00 $
      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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