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Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| FMH11N90E DISTI # 70241511 | Fuji Electric Co Ltd | IC,MOSFET,N-Channel,FAP-E3 Planar,900V,11A,285W,TO-3P(Q) RoHS: Compliant | 463 |
|
| FMH11N90E-S33PPSCQ-P DISTI # C1S230200100084 | Fuji Electric Co Ltd | Unclassified RoHS: Not Compliant | 300 |
|
| Bild | Teil # | Beschreibung |
|---|---|---|
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Mfr.#: FMH11N70E OMO.#: OMO-FMH11N70E-1190 |
Neu und Original |
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Mfr.#: FMH11N90 OMO.#: OMO-FMH11N90-1190 |
Neu und Original |
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Mfr.#: FMH11N90E OMO.#: OMO-FMH11N90E-1190 |
IC, MOSFET, N-Channel, FAP-E3 Planar, 900V, 11A, 285W, TO-3P(Q) |
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Mfr.#: FMH11N90E 11N90E OMO.#: OMO-FMH11N90E-11N90E-1190 |
Neu und Original |
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Mfr.#: FMH13N60ES OMO.#: OMO-FMH13N60ES-1190 |
Power Field-Effect Transistor, 13A I(D),600V,0.58ohm, 1-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET |
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Mfr.#: FMH16N50E OMO.#: OMO-FMH16N50E-1190 |
Power Field-Effect Transistor, 16A I(D),500V,0.38ohm, 1-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET |
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Mfr.#: FMH16N60E OMO.#: OMO-FMH16N60E-1190 |
Neu und Original |
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Mfr.#: FMH16N60ES OMO.#: OMO-FMH16N60ES-1190 |
Power Field-Effect Transistor, 16A I(D),600V,0.47ohm, 1-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET |
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Mfr.#: FMH19N50G OMO.#: OMO-FMH19N50G-1190 |
Neu und Original |
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Mfr.#: FMH19N60E OMO.#: OMO-FMH19N60E-1190 |
IC, MOSFET, N-Channel, FAP-E3 Planar, 600V, 19A, 315W, TO-3P(Q) |