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IRF7416GTRPBF

IRF7416GTRPBF
Mfr. #:
IRF7416GTRPBF
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET P-CH 30V 10A 8-SOIC
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IRF7416GTRPBF Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRF7416GTRPBF DatasheetIRF7416GTRPBF Datasheet (P4-P6)IRF7416GTRPBF Datasheet (P7-P9)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
Internationaler Gleichrichter
Produktkategorie
Transistoren - FETs, MOSFETs - Single
Verpackung
Spule
Gewichtseinheit
0.019048 oz
Montageart
SMD/SMT
Paket-Koffer
SOIC-8
Technologie
Si
Anzahl der Kanäle
1 Channel
Aufbau
Single
Transistor-Typ
1 P-Channel
Pd-Verlustleistung
2.5 W
Maximale-Betriebstemperatur
+ 150 C
Abfallzeit
60 ns
Anstiegszeit
49 ns
ID-Dauer-Drain-Strom
- 10 A
Vds-Drain-Source-Breakdown-Voltage
- 30 V
Vgs-th-Gate-Source-Threshold-Voltage
- 2.04 V
Rds-On-Drain-Source-Widerstand
20 mOhms
Transistor-Polarität
P-Kanal
Qg-Gate-Ladung
92 nC
Vorwärts-Transkonduktanz-Min
5.6 S
Tags
IRF7416, IRF741, IRF74, IRF7, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***(Formerly Allied Electronics)
MOSFET, P-CHANNEL, -30V, -10A, 20 MOHM, 61 NC QG, SO-8, HALOGEN-FREE
***et
Trans MOSFET P-CH 30V 10A 8-Pin SOIC T/R
***ark
P CHANNEL POWER MOSFET, HEXFET, -30V, -10A, SO-8
***S
French Electronic Distributor since 1988
***ark
Mosfet Transistor, N Channel, 10.8 A, 30 V, 0.011 Ohm, 4.5 V, 3 V
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 11 Milliohms;ID 10.8A;SO-8;PD 2.5W;VGS +/-20
***eco
Transistor MOSFET N Channel 30 Volt 10.8.6 Amp 8 Pin SOIC
***ure Electronics
Single N-Channel 30 V 14 mOhm 17 nC HEXFET® Power Mosfet - SOIC-8
***S.I.T. Europe - USA - Asia
Small Signal Field-Effect Transistor, 10.8A I(D), 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***nell
MOSFET, N, LOGIC, SO-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 10.8A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.011ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 3V; Power Dissi
***et Japan
Transistor MOSFET Array Dual N-CH 30V 9.1A/11A 8-Pin SOIC T/R
***ure Electronics
Dual N-Channel 30 V 20.5/13.7 mOhm 10/21 nC HEXFET® Power Mosfet - SOIC-8
***(Formerly Allied Electronics)
MOSFET, Power,N-Ch,VDSS 30V,ID 9.1 A (Control FET), 11 A (Synchronous FET),SO-8
***ineon SCT
30V Dual N-Channel HEXFET Power MOSFET in a Lead Free SO-8 package, SO8, RoHS
***ineon
Benefits: RoHS Compliant; Low RDS(on); Low Thermal resistance to PCB; Compatible with Existing Surface Mount Techniques; Low RDS(ON) at 4.5V VGS; Very Low Gate Charge; Dual N-Channel MOSFET
***nell
MOSFET,NN CH,30V,9.1A,SO8; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 11A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0137ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.8V; Pow
***trelec
Transistor Polarity = N-Channel / Configuration = Dual / Drain-Source Voltage (Vds) V = 30 / Gate-Source Voltage V = 20 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SO-8 / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 2
***Yang
Transistor MOSFET Array Dual N-CH 30V 7.6A/11A 8-Pin SOIC T/R - Tape and Reel
***ure Electronics
Dual N-Channel 30 V 16.2 mOhm 7.5 nC HEXFET® Power Mosfet - SOIC-8
***ark
MOSFET; Transistor Polarity:N Channel; Continuous Drain Current Id:11A; Drain Source Voltage Vds:30V; On Resistance Rds(on):10.8mohm; Rds(on) Test Voltage Vgs:10V; No. of Pins:8; Leaded Process Compatible:Yes; Package / Case:SO-8
***ineon
Benefits: RoHS Compliant; Low RDS(on); Low Thermal resistance to PCB; Compatible with Existing Surface Mount Techniques; Low RDS(ON) at 4.5V VGS; Very Low Gate Charge; Dual N-Channel MOSFET
***nell
MOSFET, DUAL N CH, 30V, 11A, SOIC-8; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 11A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0086ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.25V; Power Dissipation Pd: 2W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***icroelectronics
P-channel -30 V, 0.016 Ohm typ., -7 A STripFET II Power MOSFET in a SO-8 package
***ure Electronics
P-Channel 30 V 0.021 Ohm Surface Mount STripFET II Power MosFet - SOIC-8
***enic
30V 7A 2.5W 21m¦¸@10V,3.5A 2.5V@250¦ÌA P Channel SOIC-8_150mil MOSFETs ROHS
***ark
Transistor; Transistor Type:MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:7A; On Resistance, Rds(on):0.028ohm; Rds(on) Test Voltage, Vgs:20V; Threshold Voltage, Vgs Typ:1.6V ;RoHS Compliant: Yes
***ark
MOSFET Transistor, N Channel, 9 A, 30 V, 19 mohm, 10 V, 1 V
***icroelectronics
N-Channel 30V - 0.019 Ohm - 9A - SO-8 LOW GATE CHARGE STripFET(TM) II MOSFET
***nell
MOSFET, N, LOGIC, SO-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 9A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.019ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1V; Power Dissipati
***et Japan
Transistor MOSFET Array Dual N-CH 30V 10A 8-Pin SOIC T/R
***icroelectronics
Dual N-channel 30 V, 0.019 Ohm;, 10 A, SO-8 STripFET (TM); V Power MOSFET
***ark
Mosfet, Dual N-Ch, 30V, 10A, Soic; Channel Type:n Channel; Drain Source Voltage Vds N Channel:30V; Drain Source Voltage Vds P Channel:30V; Continuous Drain Current Id N Channel:10A; Continuous Drain Current Id P Channel:10A Rohs Compliant: Yes
Teil # Mfg. Beschreibung Aktie Preis
IRF7416GTRPBF
DISTI # IRF7416GTRPBFCT-ND		Infineon Technologies AGMOSFET P-CH 30V 10A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		2846In Stock
  • 1000:$0.5795
  • 500:$0.7341
  • 100:$0.9466
  • 10:$1.1980
  • 1:$1.3500
IRF7416GTRPBF
DISTI # IRF7416GTRPBFDKR-ND		Infineon Technologies AGMOSFET P-CH 30V 10A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		2846In Stock
  • 1000:$0.5795
  • 500:$0.7341
  • 100:$0.9466
  • 10:$1.1980
  • 1:$1.3500
IRF7416GTRPBF
DISTI # IRF7416GTRPBFTR-ND		Infineon Technologies AGMOSFET P-CH 30V 10A 8-SOIC
RoHS: Compliant
Min Qty: 4000
Container: Tape & Reel (TR)		Limited Supply - Call
    IRF7416GTRPBF
    DISTI # 70019633    		Infineon Technologies AGMOSFET,P-CHANNEL,-30V,-10A,20 MOHM,61 NC QG,SO-8,HALOGEN-FREE
    RoHS: Compliant    		0
    • 4000:$0.6960
    • 8000:$0.6320
    • 12000:$0.5800
    • 16000:$0.5350
    • 20000:$0.4970
    IRF7416GTRPBF
    DISTI # 942-IRF7416GTRPBF    		Infineon Technologies AGMOSFET MOSFT PCh -30V -10A 20mOhm 61nC
    RoHS: Compliant    		0
      IRF7416GTRPBFInternational Rectifier 3014
        Bild Teil # Beschreibung
        IRF7416PBF

        Mfr.#: IRF7416PBF

        OMO.#: OMO-IRF7416PBF

        		 MOSFET 1 P-CH -30V HEXFET 20mOhms 61nC
        IRF7416TRPBF.

        Mfr.#: IRF7416TRPBF.

        OMO.#: OMO-IRF7416TRPBF--1190

        		 PLANAR_MOSFETS , ROHS COMPLIANT: YES
        IRF7410PBF

        Mfr.#: IRF7410PBF

        OMO.#: OMO-IRF7410PBF-INFINEON-TECHNOLOGIES

        		 MOSFET P-CH 12V 16A 8-SOIC
        IRF7410TRPBF

        Mfr.#: IRF7410TRPBF

        OMO.#: OMO-IRF7410TRPBF-INFINEON-TECHNOLOGIES

        		 MOSFET P-CH 12V 16A 8-SOIC
        IRF7410TRPBF,F7410

        Mfr.#: IRF7410TRPBF,F7410

        OMO.#: OMO-IRF7410TRPBF-F7410-1190

        		 Neu und Original
        IRF7413A

        Mfr.#: IRF7413A

        OMO.#: OMO-IRF7413A-INFINEON-TECHNOLOGIES

        		 MOSFET N-CH 30V 12A 8-SOIC
        IRF7413PBF

        Mfr.#: IRF7413PBF

        OMO.#: OMO-IRF7413PBF-INFINEON-TECHNOLOGIES

        		 MOSFET N-CH 30V 13A 8-SOIC
        IRF7413QTRPBF

        Mfr.#: IRF7413QTRPBF

        OMO.#: OMO-IRF7413QTRPBF-INFINEON-TECHNOLOGIES

        		 MOSFET N-CH 30V 13A 8-SOIC
        IRF7413TRPBF,IRF7413,IRF

        Mfr.#: IRF7413TRPBF,IRF7413,IRF

        OMO.#: OMO-IRF7413TRPBF-IRF7413-IRF-1190

        		 Neu und Original
        IRF7416TRPBF-1

        Mfr.#: IRF7416TRPBF-1

        OMO.#: OMO-IRF7416TRPBF-1-1190

        		 Trans MOSFET P-CH 30V 10A 8-Pin SOIC T/R (Alt: IRF7416TRPBF-1)
        Verfügbarkeit
        Aktie:
        Available
        Auf Bestellung:
        1000
        Menge eingeben:
        Der aktuelle Preis von IRF7416GTRPBF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
        Referenzpreis (USD)
        Menge
        Stückpreis
        ext. Preis
        1
        0,75 $
        0,75 $
        10
        0,71 $
        7,08 $
        100
        0,67 $
        67,10 $
        500
        0,63 $
        316,85 $
        1000
        0,60 $
        596,40 $
        Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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