TGF2023-2-01

TGF2023-2-01
Mfr. #:
TGF2023-2-01
Hersteller:
Qorvo
Beschreibung:
RF JFET Transistors DC-18GHZ 6W TQGaN25 PAE 71.6% Gain 18dB
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
TGF2023-2-01 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
TGF2023-2-01 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller
TriQuint (Qorvo)
Produktkategorie
Transistoren - FETs, MOSFETs - Single
Serie
TGF
Verpackung
Gel-Pack
Teil-Aliasnamen
1099624
Paket-Koffer
STERBEN
Technologie
GaN SiC
Transistor-Typ
HEMT
Transistor-Polarität
N-Kanal
Tags
TGF2023-2-0, TGF2023-2, TGF2023, TGF202, TGF20, TGF2, TGF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***hardson RFPD
RF POWER TRANSISTOR
GaN Solutions
Qorvo Qorvo is your smart RF partner for building solutions using gallium nitride (GaN) technology. Qorvo's is the only supplier to achieve MRL 9 using USAF MRL tool and is a “trusted” supplier with industry-leading GaN reliability. Qorvo is a world-class certified manufacturer - ISO9001, ISO14001, ISO/TS16949.Learn More
QPD GaN RF Transistors
Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.
TGF2023 GaN HEMT Transistors
Qorvo TGF2023 GaN HEMT Transistors are discrete 1.25 to 20mm GaN on SiC HEMT which operate from DC-18 GHz. Each device is designed using Qorvo's proven 0.25um GaN production process. This process features advanced field plate techniques to optimize microwave power and efficiency at high drain bias operating conditions. These devices typically provide between 38-50.5dBm of saturated output power with power gain from 17.5dB and up to 21db at 3GHz. The maximum power added efficiency is between 52-78.3% which makes the these devices appropriate for high efficiency applications.Learn More
Teil # Mfg. Beschreibung Aktie Preis
TGF2023-2-01
DISTI # 772-TGF2023-2-01
QorvoRF JFET Transistors DC-18GHZ 6W TQGaN25 PAE 71.6% Gain 18dB
RoHS: Compliant
0
  • 50:$30.2800
  • 100:$26.1900
  • 250:$24.6200
Bild Teil # Beschreibung
TGF2021-12

Mfr.#: TGF2021-12

OMO.#: OMO-TGF2021-12-318

RF JFET Transistors DC-12GHz 12mm Pwr pHEMT (0.35um)
TGF2025

Mfr.#: TGF2025

OMO.#: OMO-TGF2025-318

RF JFET Transistors DC-20GHz Gain 14dB NF .9dB P1dB 24dBm
TGF2022-06

Mfr.#: TGF2022-06

OMO.#: OMO-TGF2022-06-318

RF JFET Transistors DC-20GHz 0.6mm Pwr pHEMT (0.35um)
TGF2022-60

Mfr.#: TGF2022-60

OMO.#: OMO-TGF2022-60-318

RF JFET Transistors DC-20GHz 6.0mm Pwr pHEMT (0.35um)
TGF2021-01

Mfr.#: TGF2021-01

OMO.#: OMO-TGF2021-01-318

RF JFET Transistors DC-12GHz 1mm Pwr pHEMT (0.35um)
TGF2023-2-02

Mfr.#: TGF2023-2-02

OMO.#: OMO-TGF2023-2-02-318

RF JFET Transistors DC-18GHZ 12W TQGaN25 PAE 73.3% Gain 21dB
TGF2021-04-SG

Mfr.#: TGF2021-04-SG

OMO.#: OMO-TGF2021-04-SG-1152

RF JFET Transistors 20-4000MHz Gain 12dB 12.5Volts Pwr 4 dBm
TGF2021-04SD

Mfr.#: TGF2021-04SD

OMO.#: OMO-TGF2021-04SD-1190

Neu und Original
TGF2021-08-SG

Mfr.#: TGF2021-08-SG

OMO.#: OMO-TGF2021-08-SG-1152

RF JFET Transistors 20-4000MHz Gain 12dB 12.5Volts Pwr 7 dBm
TGF2023-10

Mfr.#: TGF2023-10

OMO.#: OMO-TGF2023-10-1152

RF JFET Transistors 10mm GaN Discrete
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1000
Menge eingeben:
Der aktuelle Preis von TGF2023-2-01 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
36,93 $
36,93 $
10
35,08 $
350,84 $
100
33,24 $
3 323,70 $
500
31,39 $
15 695,25 $
1000
29,54 $
29 544,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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