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IGT60R070D1ATMA1

IGT60R070D1ATMA1
Mfr. #:
IGT60R070D1ATMA1
Hersteller:
Infineon Technologies
Beschreibung:
IC GAN FET 600V 60A 8HSOF
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IGT60R070D1ATMA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
IGT60R070D1ATMA1 Mehr Informationen
Produkteigenschaft
Attributwert
Tags
IGT60, IGT6, IGT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
CoolGaN™ Gallium Nitride HEMTs
Infineon CoolGaN™ Gallium Nitride HEMTs offer excellent advantages including ultimate efficiency, reliability, power density, and highest quality over silicon. CoolGaN transistors are built with the most reliable technology, designed for the highest efficiency and power density in switch mode power supplies. The devices work similar to conventional silicon MOSFETs with enhancement mode gate drive bias using a p-GaN gate structure.
Teil # Mfg. Beschreibung Aktie Preis
IGT60R070D1ATMA1
DISTI # V72:2272_22710692		Infineon Technologies AGIGT60R070D1ATMA13961
  • 3000:$15.3900
  • 1000:$15.4000
  • 250:$15.4100
  • 100:$15.4200
  • 25:$19.6300
  • 10:$20.0500
  • 1:$22.0400
IGT60R070D1ATMA1
DISTI # V36:1790_22710692		Infineon Technologies AGIGT60R070D1ATMA10
  • 1000000:$13.4800
  • 200000:$14.0500
  • 20000:$15.1900
  • 2000:$15.3900
IGT60R070D1ATMA1
DISTI # IGT60R070D1ATMA1CT-ND		Infineon Technologies AGIC GAN FET 600V 60A 8HSOF
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		609In Stock
  • 500:$17.2689
  • 100:$19.0208
  • 10:$22.2740
  • 1:$24.1500
IGT60R070D1ATMA1
DISTI # IGT60R070D1ATMA1DKR-ND		Infineon Technologies AGIC GAN FET 600V 60A 8HSOF
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		609In Stock
  • 500:$17.2689
  • 100:$19.0208
  • 10:$22.2740
  • 1:$24.1500
IGT60R070D1ATMA1
DISTI # IGT60R070D1ATMA1TR-ND		Infineon Technologies AGIC GAN FET 600V 60A 8HSOF
RoHS: Compliant
Min Qty: 2000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 2000:$15.3890
IGT60R070D1ATMA1
DISTI # 32361397		Infineon Technologies AGIGT60R070D1ATMA13961
  • 3000:$15.3900
  • 1000:$15.4000
  • 250:$15.4100
  • 100:$15.4200
  • 25:$19.6300
  • 10:$20.0500
  • 1:$22.0400
IGT60R070D1ATMA1
DISTI # SP001300364		Infineon Technologies AGTrans MOSFET N-CH 600V 31A 8-Pin HSOF (Alt: SP001300364)
RoHS: Compliant
Min Qty: 2000		Europe - 100
  • 20000:€12.7900
  • 12000:€13.6900
  • 8000:€14.7900
  • 4000:€15.3900
  • 2000:€15.9900
IGT60R070D1ATMA1
DISTI # IGT60R070D1ATMA1		Infineon Technologies AGTrans MOSFET N-CH 600V 31A 8-Pin HSOF - Tape and Reel (Alt: IGT60R070D1ATMA1)
RoHS: Compliant
Min Qty: 2000
Container: Reel		Americas - 0
  • 20000:$14.6900
  • 12000:$14.8900
  • 8000:$15.3900
  • 4000:$15.9900
  • 2000:$16.5900
IGT60R070D1ATMA1
DISTI # 84AC1771		Infineon Technologies AGMOSFET, N-CH, 600V, 31A, 150DEG C, 125W,Transistor Polarity:N Channel,Continuous Drain Current Id:31A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.055ohm,Rds(on) Test Voltage Vgs:-,Threshold Voltage Vgs:1.2V,Power RoHS Compliant: Yes1992
  • 1000:$14.0300
  • 500:$16.1300
  • 250:$16.9500
  • 100:$17.7700
  • 50:$18.8200
  • 25:$19.8800
  • 10:$20.8100
  • 1:$22.5500
IGT60R070D1ATMA1
DISTI # 726-IGT60R070D1ATMA1		Infineon Technologies AGMOSFET 600V CoolGaN Power Transistor
RoHS: Compliant		2160
  • 1:$22.3300
  • 5:$22.1000
  • 10:$20.6000
  • 25:$19.6800
  • 100:$17.5900
  • 250:$16.7800
  • 500:$15.9700
  • 1000:$13.8900
IGT60R070D1ATMA1
DISTI # IGT60R070D1ATMA1		Infineon Technologies AGTransistor: N-JFET,CoolGaN™,unipolar,600V,31A,Idm:60A,125W5
  • 10:$22.5500
  • 3:$25.5900
  • 1:$28.4100
IGT60R070D1ATMA1
DISTI # 2981532		Infineon Technologies AGMOSFET, N-CH, 600V, 31A, 150DEG C, 125W
RoHS: Compliant		1992
  • 2000:$23.1500
  • 500:$25.6600
  • 100:$26.5000
  • 50:$28.9100
  • 1:$31.8100
  • 10:$31.8100
IGT60R070D1ATMA1
DISTI # 2981532		Infineon Technologies AGMOSFET, N-CH, 600V, 31A, 150DEG C, 125W1974
  • 100:£13.6900
  • 50:£14.5100
  • 10:£15.3200
  • 5:£17.2000
  • 1:£17.3800
IGT60R070D1ATMA1
DISTI # XSKDRABV0044851		Infineon Technologies AGDFlip-Flop,4000/14000/40000Series,2-Func,PositiveEdgeTriggered,1-Bit,ComplementaryOutput, CMOS,PDSO14
RoHS: Compliant		80 in Stock0 on Order
  • 80:$20.2700
  • 33:$21.7200
Bild Teil # Beschreibung
IGT60R070D1ATMA1

Mfr.#: IGT60R070D1ATMA1

OMO.#: OMO-IGT60R070D1ATMA1

 MOSFET 600V CoolGaN Power Transistor
IGT60R070D1ATMA1

Mfr.#: IGT60R070D1ATMA1

OMO.#: OMO-IGT60R070D1ATMA1-INFINEON-TECHNOLOGIES

 IC GAN FET 600V 60A 8HSOF
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
5500
Menge eingeben:
Der aktuelle Preis von IGT60R070D1ATMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
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Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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