STS4DNFS30

Mfr. #:: STS4DNFS30
Hersteller:: STMicroelectronics
Beschreibung:: MOSFET N Ch 30V 0.044 Ohm 4.5A
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: STS4DNFS30 Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: STS4DNFS30 Datasheet STS4DNFS30 Datasheet (P4-P6)STS4DNFS30 Datasheet (P7-P9)STS4DNFS30 Datasheet (P10-P12)
ECAD Model:
Mehr Informationen:: STS4DNFS30 Mehr Informationen STS4DNFS30 Product Details

Produkteigenschaft
Attributwert

Hersteller:: STMicroelectronics

Produktkategorie:: MOSFET

RoHS:: Y

Technologie:: Si

Montageart:: SMD/SMT

Paket / Koffer:: SOIC-8

Anzahl der Kanäle:: 1 Channel

Polarität des Transistors:: N-Kanal

Vds - Drain-Source-Durchbruchspannung:: 30 V

Id - Kontinuierlicher Drainstrom:: 4.5 A

Rds On - Drain-Source-Widerstand:: 55 mOhms

Vgs - Gate-Source-Spannung:: 20 V

Minimale Betriebstemperatur:: - 55 C

Maximale Betriebstemperatur:: + 150 C

Pd - Verlustleistung:: 2 W

Aufbau:: Single

Kanalmodus:: Erweiterung

Verpackung:: Spule

Höhe:: 1.65 mm

Länge:: 5 mm

Serie:: STS4DNFS30

Transistortyp:: 1 N-Channel

Breite:: 4 mm

Marke:: STMicroelectronics

Abfallzeit:: 6 ns

Produktart:: MOSFET

Anstiegszeit:: 17 ns

Werkspackungsmenge:: 2500

Unterkategorie:: MOSFETs

Typische Ausschaltverzögerungszeit:: 15 ns

Typische Einschaltverzögerungszeit:: 9 ns

Gewichtseinheit:: 0.017870 oz

Tags: STS4DNFS, STS4DN, STS4D, STS4, STS

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

STS4DNFS30 Beschreibung

***ser: Power MOSFET Transistors N Ch 30V 0.044 Ohm 4.5A

***icroelectronics: N-channel - 30V - 0.044Y - 4.5A SO-8

***ca Corp: Power Field-Effect Transistor, 4.5A I(D), 30V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

***el Electronic: CAP CER 8200PF 100V C0G RADIAL

***et: Trans MOSFET N-CH 30V 4.9A 8-Pin SOIC T/R

***(Formerly Allied Electronics): MOSFET, DUAL N-CHANNEL, 30V, 4.9A, SO-8, Q101 QUALIFIED

***ernational Rectifier: 30V Dual N-Channel HEXFET Power MOSFET in a SO-8 package

***ark: Transistor; Transistor Type:MOSFET; Transistor Polarity:Dual N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:4.9A; On Resistance, Rds(on):50mohm; Rds(on) Test Voltage, Vgs:20V; Threshold Voltage, Vgs Typ:1V ;RoHS Compliant: Yes

***(Formerly Allied Electronics): MOSFET, Power;P-Ch;VDSS -30V;RDS(ON) 0.045Ohm;ID -5.8A;SO-8;PD 2.5W;VGS +/-20V

***ure Electronics: Single P-Channel 30 V 0.045 Ohm 59 nC HEXFET® Power Mosfet - SOIC-8

***ineon SCT: -30V Single P-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS

***ark: Mosfet Transistor; Transistor Polarity:p Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:2.8A; On Resistance Rds(On):0.07Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:4.5V; No. Of Pins:8Pins Rohs Compliant: Yes

*** Stop Electro: Power Field-Effect Transistor, 6.7A I(D), 30V, 0.045ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; P-Channel MOSFET

***et: Trans MOSFET P-CH 30V 4.9A 8-Pin SOIC T/R

***(Formerly Allied Electronics): MOSFET, DUAL P-CHANNEL, -30V, 4.9A, SO-8, HALOGEN-FREE

*** Electronic Components: IGBT Transistors MOSFET MOSFT DUAL PCh -30V 4.9A

***S: French Electronic Distributor since 1988

***ark: DUAL P CH MOSFET, -30V, SOIC-8; Transistor Polarity:P Channel; Continuous Drain Current Id:-4.9A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):42mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-1V ;RoHS Compliant: Yes

***ure Electronics: Dual N/P-Channel 30 V 2.1 W 12.9/12.7 nC Silicon Surface Mount Mosfet - SOIC-8

***des Inc SCT: 30V SO8 Complementary dual enhancement mode MOSFET, N+P, 30V VDS, 20±V VGS

***et: Trans MOSFET N/P-CH 30V 7.3A/5.3A 8-Pin SO T/R

***ark: Mosfet, Dual, N/p-Ch, 30V, 7.3A Rohs Compliant: Yes

***ronik: CMOS 30V 7,3/5,3A 24mOhm SO-8 RoHSconf

***ernational Rectifier: 30V Dual N- and P- Channel HEXFET Power MOSFET in a Lead-Free SO-8 package

***et Europe: Trans MOSFET N/P-CH 30V 3.5A/2.3A 8-Pin SOIC

***nell: MOSFET, NP SO-8; Transistor Type:MOSFET; Transistor Polarity:Dual N; Voltage, Vds Typ:30V; Current, Id Cont:3.5A; On State Resistance:0.08ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:1V; Case Style:SOIC; Termination Type:SMD; Current, Id Cont N Channel 2:3.5A; Current, Id Cont P Channel:2.3A; Current, Idm Pulse N Channel 2:16A; Current, Idm Pulse P Channel:10A; Max On State Resistance N Channel:0.10ohm; Max On State Resistance P Channel:0.25ohm; Power Dissipation Pd:2.0W; Voltage, Vds:30V; Voltage, Vds Max:30V

***(Formerly Allied Electronics): MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 0.035Ohm;ID 5.6A;SO-8;PD 1.8W;VGS +/-20V;-55

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Continuous Drain Current, Id:5.6A; Package/Case:8-uSOIC; Power Dissipation, Pd:1.8W; Drain Source On Resistance @ 10V:35mohm; Drain Source On Resistance @ 4.5V:600mohm ;RoHS Compliant: Yes

***ment14 APAC: N CHANNEL MOSFET, 30V, 5.6A, MICRO8; Tra; N CHANNEL MOSFET, 30V, 5.6A, MICRO8; Transistor Polarity:N Channel; Continuous Drain Current Id:5.6A; Drain Source Voltage Vds:30V; On Resistance Rds(on):35mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1V

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
STS4DNFS30 DISTI # V36:1790_07584602	STMicroelectronics	Trans MOSFET N-CH 30V 4.5A 8-Pin SO N T/R RoHS: Compliant	0
STS4DNFS30 DISTI # 497-6187-1-ND	STMicroelectronics	MOSFET N-CH 30V 4.5A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	2564In Stock	1000:$0.7841 500:$0.9463 100:$1.1518 10:$1.4330 1:$1.6000
STS4DNFS30 DISTI # 497-6187-6-ND	STMicroelectronics	MOSFET N-CH 30V 4.5A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	2564In Stock	1000:$0.7841 500:$0.9463 100:$1.1518 10:$1.4330 1:$1.6000
STS4DNFS30 DISTI # 497-6187-2-ND	STMicroelectronics	MOSFET N-CH 30V 4.5A 8-SOIC RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	2500In Stock	2500:$0.7087
STS4DNFS30L DISTI # 497-3227-2-ND	STMicroelectronics	MOSFET N-CH 30V 4A 8-SOIC RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	Limited Supply - Call
STS4DNFS30L DISTI # 497-3227-1-ND	STMicroelectronics	MOSFET N-CH 30V 4A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
STS4DNFS30L DISTI # 497-3227-6-ND	STMicroelectronics	MOSFET N-CH 30V 4A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
STS4DNFS30L DISTI # 57P2226	STMicroelectronics	MOSFET Transistor, Dual N Channel, 4 A, 30 V, 0.044 ohm, 10 V, 1 V	0
STS4DNFS30L DISTI # 89K1651	STMicroelectronics	DUAL N CHANNEL MOSFET, 30V, 4A, SOIC,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:4A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.044ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1V RoHS Compliant: Yes	0
STS4DNFS30 DISTI # 511-STS4DNFS30	STMicroelectronics	MOSFET N Ch 30V 0.044 Ohm 4.5A RoHS: Compliant	0
STS4DNFS30L DISTI # 511-STS4DNFS30L	STMicroelectronics	MOSFET N-Ch 30 Volt 4 Amp RoHS: Compliant	0
STS4DNFS30	STMicroelectronics	4.5 A, 30 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET	2000	867:$1.0500 464:$1.1550 1:$2.8000
STS4DNFS30L	STMicroelectronics	MOSFET Transistor, N-Channel, SO	12	4:$1.1250 1:$1.5000
STS4DNFS30L	STMicroelectronics		1464
STS4DNFS30L	STMicroelectronics	RoHS: Compliant	925
STS4DNFS30L DISTI # 1611431	STMicroelectronics	RoHS: Compliant	0	1000:$0.9290 500:$1.0500 100:$1.2000 10:$1.5700 1:$1.8600

Verwandte Produkte

Bild	Teil #	Beschreibung
	Mfr.#: STS4DNFS30 OMO.#: OMO-STS4DNFS30	MOSFET N Ch 30V 0.044 Ohm 4.5A
	Mfr.#: STS4DPF30L OMO.#: OMO-STS4DPF30L	MOSFET P-Ch 30 Volt 4 Amp
	Mfr.#: STS4DPF20L OMO.#: OMO-STS4DPF20L-STMICROELECTRONICS	IGBT Transistors MOSFET P-Ch 20 Volt 4 Amp
	Mfr.#: STS4DNF-S30L OMO.#: OMO-STS4DNF-S30L-1190	Neu und Original
	Mfr.#: STS4DNF60L S4DNF60L OMO.#: OMO-STS4DNF60L-S4DNF60L-1190	Neu und Original
	Mfr.#: STS4DNF60L/F OMO.#: OMO-STS4DNF60L-F-1190	Neu und Original
	Mfr.#: STS4DNFS30L/LQ OMO.#: OMO-STS4DNFS30L-LQ-1190	Neu und Original
	Mfr.#: STS4DPF-20L OMO.#: OMO-STS4DPF-20L-1190	Neu und Original
	Mfr.#: STS4DPFS20L OMO.#: OMO-STS4DPFS20L-1190	Neu und Original
	Mfr.#: STS4DPFS30L OMO.#: OMO-STS4DPFS30L-STMICROELECTRONICS	MOSFET P-CH 30V 5A 8-SOIC

Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 2000
Menge eingeben:

Der aktuelle Preis von STS4DNFS30 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Beginnen mit

STS4DNFS 4
STS4DN 14
STS4D 25
STS4 52
STS 615

Neueste Produkte

LD56050 Ultra-Low Dropout Linear Regulator

STMicro's LD56050 linear regulator includes thermal protection, maximum space-saving package, and is suitable for low power, battery-operated applications.
Compare STS4DNFS30

STS4DNFS30 vs STS4DNFS30L vs STS4DNFS30LLQ
Automotive-Grade Rectifiers

STMicroelectronics offers a large number of rectifiers that meet AEC-Q101 standards as well as strict international automotive quality requirements.
Electronic Fuses

STMicroelectronics' E-Fuses are a hot-swap power management IC that can reduce maintenance costs and improve equipment uptime and availability.
Easy-to-Use Teseo-LIV3F GNSS Module

STMicro's Teseo-LIV3F module is an easy-to-use global navigation satellite system (GNSS) standalone module.
SPC58 Automotive General Purpose MCU with Networki

STMicroelectronics' SPC58 automotive microcontrollers offer a unique scalability ideal for long-term platform development strategy of automotive customers.

More Newest Products

STS4DNFS30

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes