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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| FMP12N50E DISTI # FE0000000001009 | Fuji Electric Co Ltd | Power Field-Effect Transistor, 12A I(D),500V,0.52ohm, 1-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET, TO-220AB RoHS: Compliant | 0 in Stock0 on Order | |
| FMP12N50ES DISTI # FE0000000001010 | Fuji Electric Co Ltd | Power Field-Effect Transistor, 12A I(D),500V,0.5ohm, 1-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET, TO-220AB RoHS: Compliant | 0 in Stock0 on Order |
| Bild | Teil # | Beschreibung |
|---|---|---|
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Mfr.#: FMP12-R25 OMO.#: OMO-FMP12-R25-1190 |
Neu und Original |
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Mfr.#: FMP12-R45 OMO.#: OMO-FMP12-R45-1190 |
Neu und Original |
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Mfr.#: FMP12-R85 OMO.#: OMO-FMP12-R85-1190 |
Neu und Original |
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Mfr.#: FMP12-R85-2 OMO.#: OMO-FMP12-R85-2-1190 |
Neu und Original |
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Mfr.#: FMP12N50E OMO.#: OMO-FMP12N50E-1190 |
Power Field-Effect Transistor, 12A I(D),500V,0.52ohm, 1-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET, TO-220AB |
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Mfr.#: FMP12N50ES OMO.#: OMO-FMP12N50ES-1190 |
Power Field-Effect Transistor, 12A I(D),500V,0.5ohm, 1-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET, TO-220AB |
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Mfr.#: FMP12N60ES OMO.#: OMO-FMP12N60ES-1190 |
Power Field-Effect Transistor, 12A I(D),600V,0.75ohm, 1-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET, TO-220AB |
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Mfr.#: FMP120S141 OMO.#: OMO-FMP120S141-1190 |
FMP120S141 FCT TERM HPWR |