BSC047N08NS3GATMA1

Mfr. #:: BSC047N08NS3GATMA1
Hersteller:: Infineon Technologies
Beschreibung:: MOSFET N-Ch 80V 100A TDSON-8 OptiMOS 3
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: BSC047N08NS3GATMA1 Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: BSC047N08NS3GATMA1 Datasheet BSC047N08NS3GATMA1 Datasheet (P4-P6)BSC047N08NS3GATMA1 Datasheet (P7-P9)
ECAD Model:

Produkteigenschaft
Attributwert

Hersteller:: Infineon

Produktkategorie:: MOSFET

RoHS:: Y

Technologie:: Si

Montageart:: SMD/SMT

Paket / Koffer:: TDSON-8

Anzahl der Kanäle:: 1 Channel

Polarität des Transistors:: N-Kanal

Vds - Drain-Source-Durchbruchspannung:: 80 V

Id - Kontinuierlicher Drainstrom:: 100 A

Rds On - Drain-Source-Widerstand:: 3.9 mOhms

Vgs th - Gate-Source-Schwellenspannung:: 2 V

Vgs - Gate-Source-Spannung:: 20 V

Qg - Gate-Ladung:: 69 nC

Minimale Betriebstemperatur:: - 55 C

Maximale Betriebstemperatur:: + 150 C

Pd - Verlustleistung:: 125 W

Aufbau:: Single

Kanalmodus:: Erweiterung

Handelsname:: OptiMOS

Verpackung:: Spule

Höhe:: 1.27 mm

Länge:: 5.9 mm

Serie:: OptiMOS 3

Transistortyp:: 1 N-Channel

Breite:: 5.15 mm

Marke:: Infineon-Technologien

Vorwärtstranskonduktanz - Min:: 60 S

Abfallzeit:: 11 ns

Produktart:: MOSFET

Anstiegszeit:: 17 ns

Werkspackungsmenge:: 5000

Unterkategorie:: MOSFETs

Typische Ausschaltverzögerungszeit:: 44 ns

Typische Einschaltverzögerungszeit:: 18 ns

Teil # Aliase:: BSC047N08NS3 BSC47N8NS3GXT G SP000436372

Gewichtseinheit:: 0.004310 oz

Tags: BSC047N08NS3G, BSC047N08NS3, BSC047, BSC04, BSC0, BSC

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

BSC047N08NS3GATMA1 Beschreibung

***ure Electronics: Single N-Channel 80 V 4.7 mOhm 52 nC OptiMOS Power Mosfet - TDSON-8

***ark: Transistor Polarity:n Channel; Drain Source Voltage Vds:80V; Continuous Drain Current Id:18A; On Resistance Rds(On):0.0047Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.8V Rohs Compliant: Yes

***ineon: OptiMOS is the market leader in highly efficient solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle). | Summary of Features: Optimized technology for DC-DC converters; Excellent gate charge x R DS(ON) product (FOM); Superior thermal resistance; Dual sided cooling; Low parasitic inductance; Low profile (<0,7mm); N-channel, normal level; 100% avalanche tested; Pb-free plating; RoHS compliant | Target Applications: Solar; Consumer; Telecom; Server; PC power; DC-DC; AC-DC; Adapter; SMPS; LED; Motor control

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
BSC047N08NS3GATMA1 DISTI # BSC047N08NS3GATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 80V 100A TDSON-8 RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR)	On Order	5000:$1.2348
BSC047N08NS3GATMA1 DISTI # BSC047N08NS3GATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 80V 100A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Temporarily Out of Stock	1000:$1.4186 500:$1.7121 100:$2.2013 10:$2.7390 1:$3.0300
BSC047N08NS3GATMA1 DISTI # BSC047N08NS3GATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 80V 100A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Temporarily Out of Stock	1000:$1.4186 500:$1.7121 100:$2.2013 10:$2.7390 1:$3.0300
BSC047N08NS3GATMA1 DISTI # BSC047N08NS3GATMA1	Infineon Technologies AG	Trans MOSFET N-CH 80V 18A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC047N08NS3GATMA1) RoHS: Compliant Min Qty: 5000 Container: Reel	Americas - 0	5000:$1.2439 10000:$1.1989 20000:$1.1549 30000:$1.1169 50000:$1.0969
BSC047N08NS3GATMA1. DISTI # 31AC8216	Infineon Technologies AG	TRANSITIONAL MOSFETS	0	1:$1.4900 10000:$1.3900 30000:$1.2900
BSC047N08NS3 G DISTI # 726-BSC047N08NS3G	Infineon Technologies AG	MOSFET N-Ch 80V 100A TDSON-8 OptiMOS 3 RoHS: Compliant	0	1:$2.5500 10:$2.1600 100:$1.7300 500:$1.5200 1000:$1.2600 2500:$1.1700 5000:$1.1300
BSC047N08NS3GATMA1 DISTI # 726-BSC047N08NS3GATM	Infineon Technologies AG	MOSFET N-Ch 80V 100A TDSON-8 OptiMOS 3 RoHS: Compliant	0	1:$2.5500 10:$2.1600 100:$1.7300 500:$1.5200 1000:$1.2600 2500:$1.1700 5000:$1.1300

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Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 1986
Menge eingeben:

Der aktuelle Preis von BSC047N08NS3GATMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~2,54 $~~; ~~2,54 $~~

10: ~~2,15 $~~; ~~21,50 $~~

100: ~~1,72 $~~; ~~172,00 $~~

500: ~~1,51 $~~; ~~755,00 $~~

1000: ~~1,25 $~~; ~~1 250,00 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

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BSC047N08NS3GATMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes