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IPB180N08S402ATMA1

IPB180N08S402ATMA1
Mfr. #:
IPB180N08S402ATMA1
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET N-CHANNEL 75/80V
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPB180N08S402ATMA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IPB180N08S402ATMA1 DatasheetIPB180N08S402ATMA1 Datasheet (P4-P6)IPB180N08S402ATMA1 Datasheet (P7-P9)
ECAD Model:
Mehr Informationen:
IPB180N08S402ATMA1 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TO-263-7
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
80 V
Id - Kontinuierlicher Drainstrom:
180 A
Rds On - Drain-Source-Widerstand:
1.8 mOhms
Vgs th - Gate-Source-Schwellenspannung:
2 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
167 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Pd - Verlustleistung:
277 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Qualifikation:
AEC-Q101
Verpackung:
Spule
Höhe:
4.4 mm
Länge:
10 mm
Transistortyp:
1 N-Channel
Breite:
9.25 mm
Marke:
Infineon-Technologien
Abfallzeit:
50 ns
Produktart:
MOSFET
Anstiegszeit:
15 ns
Werkspackungsmenge:
1000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
50 ns
Typische Einschaltverzögerungszeit:
30 ns
Teil # Aliase:
IPB180N08S4-02 SP000983458
Gewichtseinheit:
0.053885 oz
Tags
IPB180N0, IPB180N, IPB18, IPB1, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ineon SCT
80V, N-Ch, 2.2 mΩ max, Automotive MOSFET, D2PAK 7pin, OptiMOS™-T2, PG-TO263-7, RoHS
***ical
Trans MOSFET N-CH 80V 180A Automotive 7-Pin(6+Tab) D2PAK T/R
***nell
MOSFET, AEC-Q101, N-CH, 80V, TO-263; Transistor Polarity: N Channel; Continuous Drain Current Id: 180A; Drain Source Voltage Vds: 80V; On Resistance Rds(on): 0.0018ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 277W; Transistor Case Style: TO-263; No. of Pins: 7Pins; Operating Temperature Max: 175°C; Product Range: OptiMOS T2 Series; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***ineon
Summary of Features: N-channel - Enhancement mode; AEC Q101 qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green Product (RoHS compliant); 100% Avalanche tested; Ultra low R DSon; Ultra high I D
***ark
Mosfet Transistor, N Channel, 195 A, 60 V, 0.00165 Ohm, 10 V, 3.7 V
*** Source Electronics
MOSFET N CH 60V 195A D2PAK / Trans MOSFET N-CH Si 60V 295A 3-Pin(2+Tab) D2PAK T/R
***trelec
Operating temperature: -55...+175 °C Housing type: D2PAK Polarity: N Power dissipation: 375 W
***ineon SCT
60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
***ure Electronics
Single N-Channel 60 V 2 mOhm 274 nC HEXFET® Power Mosfet - D2PAK
***(Formerly Allied Electronics)
MOSFET,60V, 195A, 2.0mOhm, 274 nC, D2PAK
*** Stop Electro
Power Field-Effect Transistor, 195A I(D), 60V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***ineon
Benefits: RoHS Compliant; Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability
***nell
MOSFET, N CH, 60V, 195A, TO-263-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 195A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.00165ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.7V
***icroelectronics
N-channel 80 V, 1.7 mOhm typ., 180 A STripFET F7 Power MOSFET in H2PAK-6 package
***ure Electronics
STH270N8F7 Series 80 V 180 A 0.0021 Ohm N-Ch STripFET™ F7 Power Mosfet - H2PAK-6
***ical
Trans MOSFET N-CH 80V 180A 7-Pin(6+Tab) H2PAK T/R
***(Formerly Allied Electronics)
MOSFET N-Ch 80V 180A STripFET H2PAK6
*** Electronic Components
MOSFET N-CH 80V 17mOhm 180A STripFET VII
***r Electronics
Power Field-Effect Transistor, 180A I(D), 80V, 0.0021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***icroelectronics SCT
Power MOSFETs, 80V, 180A, H2PAK-6, Tape and Reel
***ineon SCT
60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
***ure Electronics
Single N-Channel 60 V 2.4 mOhm 186 nC HEXFET® Power Mosfet - D2PAK
***ical
Trans MOSFET N-CH Si 60V 232A 3-Pin(2+Tab) D2PAK Tube
***(Formerly Allied Electronics)
MOSFET, 60V,195A, 2.4mOhm, 186nC, D2PAK
*** Stop Electro
Power Field-Effect Transistor, 195A I(D), 60V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***ineon
Benefits: RoHS Compliant; Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability
***r Electronics
Power Field-Effect Transistor, 180A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
***ical
Trans MOSFET N-CH 80V 180A Automotive 7-Pin(6+Tab) H2PAK T/R
***icroelectronics
Automotive-grade N-channel 80 V, 1.7 mOhm typ., 180 A STripFET F7 Power MOSFET in H2PAK-6 package
***nell
MOSFET, AEC-Q101, N-CH, 80V, 180A; Transistor Polarity: N Channel; Continuous Drain Current Id: 180A; Drain Source Voltage Vds: 80V; On Resistance Rds(on): 0.0017ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4.5V; Power Dissipation Pd: 315W; Transistor Case Style: H2PAK-6; No. of Pins: 7Pins; Operating Temperature Max: 175°C; Product Range: STripFET F7 Series; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
***ark
N CH POWER MOSFET, HEXFET, 100V, 190A, D2PAK-7; Transistor Polarity:N Channel; C
***ineon SCT
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak 7-pin package, D2PAK7P, RoHS
***ure Electronics
Single N-Channel 100 V 4 mOhm 230 nC HEXFET® Power Mosfet - D2PAK
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 190A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
***et
Trans MOSFET N-CH 100V 190A 7-Pin(6+Tab) D2PAK T/R
***Yang
Trans MOSFET N-CH 100V 190A 7-Pin(6+Tab) D2PAK T/R - Product that comes on tape, but is not reeled (
***ment14 APAC
MOSFET, N-CH, 100V, 190A, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:190A; Source Voltage Vds:100V; On Resistance
***ineon
Benefits: RoHS Compliant; Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability | Target Applications: Battery Operated Drive
***nell
MOSFET, N-CH, 100V, 190A, TO-263; Transistor Polarity: N Channel; Continuous Drain Current Id: 190A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.0033ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 380W; Transistor Case Style: TO-263; No. of Pins: 7Pins; Operating Temperature Max: 175°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***icroelectronics
N-channel 60 V, 1.7 mOhm typ., 180 A STripFET F6 Power MOSFET in H2PAK-6 package
***r Electronics
Power Field-Effect Transistor, 180A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
***ical
Trans MOSFET N-CH 60V 180A 7-Pin(6+Tab) H2PAK T/R
***ure Electronics
N-Channel 60 V 2.4 mOhm SMT STripFET VI DeepGate Power Mosfet - H2PAK-6
***icroelectronics SCT
Power MOSFETs, 60V, 180A, H2PAK-6, Tape and Reel
75V to 100V N-Channel Automotive MOSFETs
Infineon Technologies 75V to 100V N-Channel Automotive MOSFETs are AEC-Q101 qualified for automotive applications, and available in a wide range of package types, including D-PAK, TOLL (HSOF-8),  TOLG (HSOG-8), and SSO8 (TDSON-8). These MOSFETs are ideal for fuel injection systems, in-vehicle wireless charging applications, and the C02 emission-reducing 48V power subsystem known as Board Net.
Teil # Mfg. Beschreibung Aktie Preis
IPB180N08S402ATMA1
DISTI # V36:1790_06378825		Infineon Technologies AGTrans MOSFET N-CH 80V 180A Automotive T/R
RoHS: Compliant		0
    IPB180N08S402ATMA1
    DISTI # V72:2272_06378825    		Infineon Technologies AGTrans MOSFET N-CH 80V 180A Automotive T/R
    RoHS: Compliant    		0
      IPB180N08S402ATMA1
      DISTI # IPB180N08S402ATMA1CT-ND      		Infineon Technologies AGMOSFET N-CH TO263-7
      RoHS: Compliant
      Min Qty: 1
      Container: Cut Tape (CT)      		146In Stock
      • 500:$3.4845
      • 100:$4.0933
      • 10:$4.9960
      • 1:$5.5600
      IPB180N08S402ATMA1
      DISTI # IPB180N08S402ATMA1DKR-ND      		Infineon Technologies AGMOSFET N-CH TO263-7
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®      		146In Stock
      • 500:$3.4845
      • 100:$4.0933
      • 10:$4.9960
      • 1:$5.5600
      IPB180N08S402ATMA1
      DISTI # IPB180N08S402ATMA1TR-ND      		Infineon Technologies AGMOSFET N-CH TO263-7
      RoHS: Compliant
      Min Qty: 1000
      Container: Tape & Reel (TR)      		Temporarily Out of Stock
      • 2000:$2.7105
      • 1000:$2.8532
      IPB180N08S402ATMA1
      DISTI # IPB180N08S402ATMA1      		Infineon Technologies AGTrans MOSFET N-CH 80V 180A 7-Pin TO-263 T/R - Bulk (Alt: IPB180N08S402ATMA1)
      RoHS: Compliant
      Min Qty: 145
      Container: Bulk      		Americas - 0
        IPB180N08S402ATMA1
        DISTI # IPB180N08S402ATMA1        		Infineon Technologies AGTrans MOSFET N-CH 80V 180A 7-Pin TO-263 T/R - Tape and Reel (Alt: IPB180N08S402ATMA1)
        RoHS: Compliant
        Min Qty: 1000
        Container: Reel        		Americas - 0
        • 6000:$2.2900
        • 10000:$2.2900
        • 4000:$2.3900
        • 2000:$2.4900
        • 1000:$2.5900
        IPB180N08S402ATMA1
        DISTI # SP000983458        		Infineon Technologies AGTrans MOSFET N-CH 80V 180A 7-Pin TO-263 T/R (Alt: SP000983458)
        RoHS: Compliant
        Min Qty: 1000
        Container: Tape and Reel        		Europe - 0
        • 10000:€1.9900
        • 6000:€2.1900
        • 4000:€2.3900
        • 2000:€2.4900
        • 1000:€2.5900
        IPB180N08S402ATMA1
        DISTI # 13AC9028        		Infineon Technologies AGMOSFET, AEC-Q101, N-CH, 80V, TO-263,Transistor Polarity:N Channel,Continuous Drain Current Id:180A,Drain Source Voltage Vds:80V,On Resistance Rds(on):0.0018ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power RoHS Compliant: Yes0
        • 500:$3.1000
        • 250:$3.4500
        • 100:$3.6500
        • 50:$3.8300
        • 25:$4.0200
        • 10:$4.2000
        • 1:$4.9500
        IPB180N08S4-02
        DISTI # 726-IPB180N08S4-02        		Infineon Technologies AGMOSFET N-CHANNEL 75/80V
        RoHS: Compliant        		743
        • 1:$4.9000
        • 10:$4.1600
        • 100:$3.6100
        • 250:$3.4200
        • 500:$3.0700
        • 1000:$2.5900
        • 2000:$2.4600
        IPB180N08S402ATMA1
        DISTI # 726-IPB180N08S402ATM        		Infineon Technologies AGMOSFET N-CHANNEL 75/80V
        RoHS: Compliant        		10
        • 1:$4.9000
        • 10:$4.1600
        • 100:$3.6100
        • 250:$3.4200
        • 500:$3.0700
        • 1000:$2.5900
        • 2000:$2.4600
        IPB180N08S402ATMA1
        DISTI # 2725841        		Infineon Technologies AGMOSFET, AEC-Q101, N-CH, 80V, TO-263
        RoHS: Compliant        		0
        • 500:$5.2900
        • 100:$6.5300
        • 10:$7.9600
        • 1:$8.9100
        IPB180N08S402ATMA1
        DISTI # 2725841        		Infineon Technologies AGMOSFET, AEC-Q101, N-CH, 80V, TO-2630
        • 500:£2.4100
        • 250:£2.6900
        • 100:£2.8400
        • 10:£3.2600
        • 1:£4.2800
        Bild Teil # Beschreibung
        SN65HVD379DR

        Mfr.#: SN65HVD379DR

        OMO.#: OMO-SN65HVD379DR

        		 RS-422/RS-485 Interface IC 3.3 V Full-Duplex RS-485/RS-422
        3660

        Mfr.#: 3660

        OMO.#: OMO-3660

        		 Fiber Optic Connectors SLANT TOP BOX (3660)
        7448680140

        Mfr.#: 7448680140

        OMO.#: OMO-7448680140

        		 Common Mode Chokes / Filters WE-LPCC CM Pwr Choke 230uH 16A 3.6mOhms
        RC0603FR-0733KL

        Mfr.#: RC0603FR-0733KL

        OMO.#: OMO-RC0603FR-0733KL

        		 Thick Film Resistors - SMD 33K OHM 1%
        SN65HVD379DR

        Mfr.#: SN65HVD379DR

        OMO.#: OMO-SN65HVD379DR-TEXAS-INSTRUMENTS

        		 RS-422/RS-485 Interface IC 3.3 V Full-Duplex RS-485/RS-422
        3660

        Mfr.#: 3660

        OMO.#: OMO-3660-ADAFRUIT

        		 Adafruit BME680 - Temperature Humidity Pressure and Gas Senso
        UCC21520AQDWRQ1

        Mfr.#: UCC21520AQDWRQ1

        OMO.#: OMO-UCC21520AQDWRQ1-TEXAS-INSTRUMENTS

        		 Isolated Dual-Channel Gate Driver for Automotive
        RC0603FR-0733KL

        Mfr.#: RC0603FR-0733KL

        OMO.#: OMO-RC0603FR-0733KL-YAGEO

        		 Thick Film Resistors - SMD 33K OHM 1%
        RC0603FR-0775KL

        Mfr.#: RC0603FR-0775KL

        OMO.#: OMO-RC0603FR-0775KL-YAGEO

        		 Thick Film Resistors - SMD 75K OHM 1%
        RC0603FR-0716KL

        Mfr.#: RC0603FR-0716KL

        OMO.#: OMO-RC0603FR-0716KL-YAGEO

        		 Thick Film Resistors - SMD 16K OHM 1%
        Verfügbarkeit
        Aktie:
        19
        Auf Bestellung:
        2002
        Menge eingeben:
        Der aktuelle Preis von IPB180N08S402ATMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
        Referenzpreis (USD)
        Menge
        Stückpreis
        ext. Preis
        1
        4,90 $
        4,90 $
        10
        4,16 $
        41,60 $
        100
        3,61 $
        361,00 $
        250
        3,42 $
        855,00 $
        500
        3,07 $
        1 535,00 $
        Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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