BSC889N03LSG

Mfr. #:: BSC889N03LSG
Hersteller:: Rochester Electronics, LLC
Beschreibung:: Power Field-Effect Transistor, 13A I(D), 30V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: BSC889N03LSG Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Produkteigenschaft
Attributwert

Hersteller: INFINEON

Produktkategorie: FETs - Einzeln

Tags: BSC889N03LSG, BSC889N03L, BSC889, BSC8, BSC

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

BSC889N03LSG Beschreibung

***et: Trans MOSFET N-CH 30V 13A 8-Pin TDSON EP

***i-Key: N-CHANNEL POWER MOSFET

***ure Electronics: Single N-Channel 50 V 3.5 Ohm 300 mW Silicon Surface Mount Mosfet - SOT-23

***ical: Trans MOSFET N-CH 50V 0.2A Automotive 3-Pin SOT-23 T/R

***nell: MOSFET, AEC-Q101, N CH, 50V, 0.2A, 0.3W; Transistor Polarity: N Channel; Continuous Drain Current Id: 200mA; Drain Source Voltage Vds: 50V; On Resistance Rds(on): 1.4ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.2V; Power Dissipation Pd: 300mW; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)

***p One Stop Global: Trans MOSFET N-CH 60V 0.2A Automotive 3-Pin SOT-23 T/R

***ark: Mosfet, Aec-Q101, N-Ch, 60V, Sot-23-3 Rohs Compliant: Yes

***nell: MOSFET, AEC-Q101, N-CH, 60V, SOT-23-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 200mA; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 2.5ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.4

***et: Trans MOSFET N-CH 60V 0.2A 3-Pin SOT-23 T/R

***ark: Mosfet, N-Ch, 60V, 0.2A, Sot-23-3 Rohs Compliant: Yes

***nell: MOSFET, N-CH, 60V, 0.2A, SOT-23-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 200mA; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 2.5ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.4V; P

***ure Electronics: N-Channel 60 V 0.5 W 100 mOhm 10 nC SMT PowerTrench Mosfet - SSOT-3

***emi: N-Channel PowerTrench® MOSFET 60V, 1.7A, 100mΩ

***ment14 APAC: MOSFET, N, SMD, SSOT-3; Transistor Polarity:N Channel; Continuous Drain Current Id:1.7A; Drain Source Voltage Vds:60V; On Resistance Rds(on):100mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.4V; Power Dissipation Pd:500mW; Transistor Case Style:SuperSOT; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:1.7A; Package / Case:SuperSOT-3; Power Dissipation Pd:500mW; Termination Type:SMD; Voltage Vds Typ:60V; Voltage Vgs Max:2.4V; Voltage Vgs Rds on Measurement:10V

***rchild Semiconductor: This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. This MOSFET features very low RDS(ON) in a small SOT23 footprint. Fairchild’s PowerTrench technology provides faster switching than other MOSFETs with comparable RDS(ON) specifications. The result is higher overall efficiency with less board space.

***trelec: Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 1.7 / Drain-Source Voltage (Vds) V = 60 / ON Resistance (Rds(on)) mOhm = 83 / Gate-Source Voltage V = 20 / Fall Time ns = 5 / Rise Time ns = 6 / Turn-OFF Delay Time ns = 15 / Turn-ON Delay Time ns = 10 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) mW = 500

***ure Electronics: SQ2362ES Series 60 V 0.068 Ohm 4.3 A SMT Automotive N-Channel Mosfet - SOT-23

***enic: 60V 4.3A 95m´Î@10V4.5A 3W 2.5V@250Ã×A N Channel SOT-23(SOT-23-3) MOSFETs ROHS

***ow.cn: Trans MOSFET N-CH 60V 4.3A Automotive 3-Pin SOT-23 T/R

***ment14 APAC: MOSFET, AUTO, N-CH, 60V, 2.3A, SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:2.3A; Source Voltage Vds:60V; On Resistance

***nsix Microsemi: Power Field-Effect Transistor, 4.3A I(D), 60V, 0.068ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

***ark: MOSFET, AEC-Q101, N-CH, 60V, 2.3A, SOT-23; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:4.3A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V RoHS Compliant: Yes

***nell: MOSFET, AUTO, N-CH, 60V, 2.3A, SOT-23; Transistor Polarity: N Channel; Continuous Drain Current Id: 2.3A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.125ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 3.3W; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: TrenchFET Series; Automotive Qualification Standard: AEC-Q101; MSL: MSL 3 - 168 hours; SVHC: No SVHC (17-Dec-2015)

***ure Electronics: Single P-Channel 60 V 1 W 6 nC Silicon Surface Mount Mosfet - SOT-23

***emi: P-Channel Power MOSFET, -60V, -1.8A, 250mΩ

***ark: Transistor Polarity:p Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:1.8A; On Resistance Rds(On):0.19Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.6V Rohs Compliant: Yes

*** Stop Electro: Small Signal Field-Effect Transistor, 1.8A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
BSC889N03LSGATMA1 DISTI # BSC889N03LSGATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 30V 45A TDSON-8 RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR)	Limited Supply - Call
BSC889N03LSGATMA1 DISTI # BSC889N03LSGATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 30V 45A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
BSC889N03LSGATMA1 DISTI # BSC889N03LSGATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 30V 45A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
BSC889N03LS G DISTI # 726-BSC889N03LSG	Infineon Technologies AG	MOSFET N-Ch 30V 13A TDSON-8 RoHS: Compliant	0
BSC889N03LSG	Infineon Technologies AG	Power Field-Effect Transistor, 13A I(D), 30V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	329990	1000:$0.2600 500:$0.2800 100:$0.2900 25:$0.3000 1:$0.3200
BSC889N03LSGATMA1	Infineon Technologies AG	Power Field-Effect Transistor, 13A I(D), 30V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	30000	1000:$0.2800 500:$0.2900 100:$0.3000 25:$0.3200 1:$0.3400

Verwandte Produkte

Bild	Teil #	Beschreibung
	Mfr.#: BSC889N03LS OMO.#: OMO-BSC889N03LS-1190	Neu und Original
	Mfr.#: BSC889N03LS G OMO.#: OMO-BSC889N03LS-G-1190	MOSFET N-Ch 30V 13A TDSON-8
	Mfr.#: BSC889N03LSG OMO.#: OMO-BSC889N03LSG-1190	Power Field-Effect Transistor, 13A I(D), 30V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
	Mfr.#: BSC889N03LSG E8178 OMO.#: OMO-BSC889N03LSG-E8178-1190	Neu und Original
	Mfr.#: BSC889N03LSGATMA1 OMO.#: OMO-BSC889N03LSGATMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 30V 45A TDSON-8
	Mfr.#: BSC889N03LSGE8178 OMO.#: OMO-BSC889N03LSGE8178-1190	Neu und Original
	Mfr.#: BSC889N03MS OMO.#: OMO-BSC889N03MS-1190	Neu und Original
	Mfr.#: BSC889N03MS G OMO.#: OMO-BSC889N03MS-G-1190	MOSFET N-Ch 30V 12A TDSON-8
	Mfr.#: BSC889N03MSG OMO.#: OMO-BSC889N03MSG-1190	Power Field-Effect Transistor, 12A I(D), 30V, 0.0091ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
	Mfr.#: BSC889N03MSGATMA1 OMO.#: OMO-BSC889N03MSGATMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 30V 44A TDSON-8

Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 4000
Menge eingeben:

Der aktuelle Preis von BSC889N03LSG dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~0,39 $~~; ~~0,39 $~~

10: ~~0,37 $~~; ~~3,70 $~~

100: ~~0,35 $~~; ~~35,10 $~~

500: ~~0,33 $~~; ~~165,75 $~~

1000: ~~0,31 $~~; ~~312,00 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

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BSC889N03LSG

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes