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2N6341G

2N6341G
Mfr. #:
2N6341G
Hersteller:
ON Semiconductor
Beschreibung:
Bipolar Transistors - BJT 25A 150V 200W NPN
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
2N6341G Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
2N6341G Datasheet
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
Bipolartransistoren - BJT
RoHS:
Y
Montageart:
Durchgangsloch
Paket / Koffer:
TO-204-2
Polarität des Transistors:
NPN
Aufbau:
Single
Kollektor- Emitterspannung VCEO Max:
150 V
Kollektor- Basisspannung VCBO:
180 V
Emitter- Basisspannung VEBO:
6 V
Kollektor-Emitter-Sättigungsspannung:
1.8 V
Maximaler DC-Kollektorstrom:
25 A
Bandbreitenprodukt fT gewinnen:
40 MHz
Minimale Betriebstemperatur:
- 65 C
Maximale Betriebstemperatur:
+ 150 C
Serie:
2N6341
Höhe:
8.51 mm
Länge:
39.37 mm
Verpackung:
Tablett
Breite:
26.67 mm
Marke:
ON Semiconductor
Kontinuierlicher Kollektorstrom:
25 A
DC-Kollektor/Basisverstärkung hfe Min:
50
Pd - Verlustleistung:
200 W
Produktart:
BJTs - Bipolartransistoren
Werkspackungsmenge:
100
Unterkategorie:
Transistoren
Gewichtseinheit:
0.056438 oz
Tags
2N6341, 2N634, 2N63, 2N6
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***emi
25 A, 150 V NPN Bipolar Power Transistor
***ical
Trans GP BJT NPN 150V 25A 200000mW 3-Pin(2+Tab) TO-3 Tray
***ure Electronics
2N Series 180 V 25 A Screw Mount High-Power NPN Silicon Transistor - TO-204AA
***ark
Transistor Polarity:npn; Collector Emitter Voltage V(Br)Ceo:150V; Dc Collector Current:25A; Power Dissipation Pd:200W; Transistor Mounting:through Hole; No. Of Pins:2Pins; Transition Frequency Ft:40Mhz; Dc Current Gain Hfe:40Hfe Rohs Compliant: Yes
Teil # Mfg. Beschreibung Aktie Preis
2N6341G
DISTI # 25632800		ON SemiconductorTrans GP BJT NPN 150V 25A 3-Pin(2+Tab) TO-3 Tray
RoHS: Compliant		100
  • 300:$7.3201
  • 200:$7.4165
  • 100:$7.5141
2N6341G
DISTI # 2N6341GOS-ND		ON SemiconductorTRANS NPN 150V 25A TO-3
RoHS: Compliant
Min Qty: 1
Container: Tray		2In Stock
  • 1:$13.3300
2N6341G
DISTI # V36:1790_07304829		ON SemiconductorTrans GP BJT NPN 150V 25A 3-Pin(2+Tab) TO-3 Tray
RoHS: Compliant		0
    2N6341G
    DISTI # 2N6341G    		ON SemiconductorTrans GP BJT NPN 150V 25A 3-Pin(2+Tab) TO-204 Tray - Trays (Alt: 2N6341G)
    RoHS: Compliant
    Min Qty: 100
    Container: Tray    		Americas - 35
    • 1000:$6.9499
    • 500:$7.1215
    • 300:$7.3018
    • 200:$7.4914
    • 100:$7.5900
    2N6341G
    DISTI # 2N6341G    		ON SemiconductorTrans GP BJT NPN 150V 25A 3-Pin(2+Tab) TO-204 Tray - Bulk (Alt: 2N6341G)
    RoHS: Compliant
    Min Qty: 40
    Container: Bulk    		Americas - 0
    • 400:$7.8900
    • 200:$8.0900
    • 120:$8.1900
    • 40:$8.2900
    • 80:$8.2900
    2N6341G
    DISTI # 50AC7727    		ON SemiconductorTRANSISTOR, NPN, 150V, 25A, TO-204,Transistor Polarity:NPN,Collector Emitter Voltage V(br)ceo:150V,Transition Frequency ft:40MHz,Power Dissipation Pd:200W,DC Collector Current:25A,DC Current Gain hFE:12hFE,Transistor Case RoHS Compliant: Yes37
    • 500:$7.4600
    • 250:$7.7100
    • 100:$8.7700
    • 50:$9.3100
    • 25:$10.3200
    • 10:$10.6200
    • 1:$11.3600
    2N6341G.
    DISTI # 15AC5406    		ON SemiconductorTransistor Polarity:NPN,Collector Emitter Voltage V(br)ceo:150V,Transition Frequency ft:40MHz,Power Dissipation Pd:200W,DC Collector Current:25A,DC Current Gain hFE:40hFE,No. of Pins:2Pins,Operating Temperature Max:200°C RoHS Compliant: Yes0
    • 1000:$7.0200
    • 500:$7.2000
    • 202:$7.3800
    • 102:$7.5700
    • 1:$7.6700
    2N6341G
    DISTI # 863-2N6341G    		ON SemiconductorBipolar Transistors - BJT 25A 150V 200W NPN
    RoHS: Compliant    		100
    • 1:$12.1100
    • 10:$11.1400
    • 20:$10.6800
    • 100:$9.4100
    • 200:$8.9500
    • 500:$8.3700
    • 1000:$7.6800
    2N6341GON SemiconductorPower Bipolar Transistor, 25A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin
    RoHS: Compliant    		1370
    • 1000:$8.4300
    • 500:$8.8800
    • 100:$9.2400
    • 25:$9.6400
    • 1:$10.3800
    2N6341GON SemiconductorINSTOCK20
      2N6341G
      DISTI # 2845278      		ON SemiconductorTRANSISTOR, NPN, 150V, 25A, TO-204
      RoHS: Compliant      		33
      • 1:$20.2000
      2N6341G
      DISTI # 2845278      		ON SemiconductorTRANSISTOR, NPN, 150V, 25A, TO-20453
      • 100:£6.5500
      • 50:£7.1900
      • 10:£7.8200
      • 5:£8.8700
      • 1:£9.3800
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      Verfügbarkeit
      Aktie:
      100
      Auf Bestellung:
      2083
      Menge eingeben:
      Der aktuelle Preis von 2N6341G dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      12,11 $
      12,11 $
      10
      11,14 $
      111,40 $
      20
      10,68 $
      213,60 $
      100
      9,41 $
      941,00 $
      200
      8,95 $
      1 790,00 $
      500
      8,37 $
      4 185,00 $
      1000
      7,68 $
      7 680,00 $
      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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