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FDMD8680

FDMD8680
Mfr. #:
FDMD8680
Hersteller:
ON Semiconductor / Fairchild
Beschreibung:
MOSFET 80V Dual N Chnl PowerTrench MOSFET
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FDMD8680 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
Power-33-8
Handelsname:
PowerTrench
Verpackung:
Spule
Höhe:
0.8 mm
Länge:
3.3 mm
Serie:
FDMD8680
Breite:
3.3 mm
Marke:
ON Semiconductor / Fairchild
Produktart:
MOSFET
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Gewichtseinheit:
0.003455 oz
Tags
FDMD86, FDMD, FDM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***emi
Dual N-Channel PowerTrench® MOSFET 60V, 66A, 4.7mΩ
***ure Electronics
Dual N-Channel PowerTrench MOSFET, 80V, 66A. 8-PQFN PACK
***r Electronics
Power Field-Effect Transistor, 66A I(D), 80V, 0.0047ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
***rchild Semiconductor
This package integrates two N-Channel devices connected internally in common-source configuration. This enables very low package parasitics and optimized thermal path to the common source pad on the bottom. Provides a very small footprint (5 x 6 mm) for higher power density.
***ark
MOSFET Transistor, N Channel, 80 A, 80 V, 0.0095 ohm, 10 V, 3 V
***ure Electronics
N-Channel 80 V 80 A 11 mOhm Surface Mount StripFET II Power Mosfet - D2PAK
***ical
Trans MOSFET N-CH 80V 80A 3-Pin(2+Tab) D2PAK T/R
***r Electronics
Power Field-Effect Transistor, 80A I(D), 80V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***nell
MOSFET, N-CH, 80V, 80A, D2PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 80A; Drain Source Voltage Vds: 80V; On Resistance Rds(on): 0.0095ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 300W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015); Operating Temperature Min: -55°C
***ure Electronics
Single N-Channel 80 V 5.4 mOhm 52 nC OptiMOS™ Power Mosfet - D2PAK
***ow.cn
Trans MOSFET N-CH 80V 80A Automotive 3-Pin(2+Tab) D2PAK T/R
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 80A I(D), 80V, 0.0054ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***ment14 APAC
MOSFET, N CH, 80A, 80V, PG-TO263-3; Transistor Polarity:N Channel; Drain Source Voltage Vds:80V; On Resistance Rds(on):4.6mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:150W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-263; No. of Pins:3; Current Id Max:80A; Power Dissipation Pd:150W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
***ineon
OptiMOS is the market leader in highly efficient solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle). | Summary of Features: Optimized technology for DC-DC converters; Excellent gate charge x R DS(ON) product (FOM); Superior thermal resistance; Dual sided cooling; Low parasitic inductance; Low profile (<0,7mm); N-channel, normal level; 100% avalanche tested; Pb-free plating; RoHS compliant | Target Applications: Solar; Consumer; Telecom; Server; PC power; DC-DC; AC-DC; Adapter; SMPS; LED; Motor control
***ical
Trans MOSFET N-CH 80V 80A 3-Pin(2+Tab) D2PAK
***el Electronic
Multilayer Ceramic Capacitors MLCC - SMD/SMT 0402 1.6pF 100volts C0G +/-0.25pF
***ment14 APAC
MOSFET, N CH, 80A, 80V, PG-TO263-3; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:80V; On Resistance Rds(on):5.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.8V; Power Dissipation Pd:136W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-263; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:80A; Power Dissipation Pd:136W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
***ineon
OptiMOS is the market leader in highly efficient solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle). | Summary of Features: Optimized technology for DC-DC converters; Excellent gate charge x R DS(ON) product (FOM); Superior thermal resistance; Dual sided cooling; Low parasitic inductance; Low profile (<0,7mm); N-channel, normal level; 100% avalanche tested; Pb-free plating; RoHS compliant | Target Applications: Solar; Consumer; Telecom; Server; PC power; DC-DC; AC-DC; Adapter; SMPS; LED; Motor control
***ark
MOSFET, N CH, 80V, 0.0026OHM, 76A, POWER 56-8; Transistor Polarity:N Channel; Co
***emi
N-Channel PowerTrench® MOSFET, Dual CoolTM 56, 80V, 110A, 3.1mΩ
***ure Electronics
Dual N-Channel 80 V 5 mOhm 84 nC 125 W PowerTrench SMT Mosfet - PQFN-8
*** Stop Electro
Power Field-Effect Transistor, 24A I(D), 80V, 0.0031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process. Advancements in both silicon and Dual Cool™ package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance.
***nell
MOSFET, N CH, 80V, 76A, POWER 56-8; Transistor Polarity:N Channel; Continuous Drain Current Id:76A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0.0026ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.3V; Power Dissipation Pd:125W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:-; SVHC:No SVHC (20-Jun-2013)
***icroelectronics
N-Channel 100V - 0.012Ohm - 80A - D2PAK LOW GATE CHARGE STripFET(TM) MOSFET
***ure Electronics
N-Channel 100 V 0.015 O 135 nC Surface Mount STripFET™ II Power MosFet- D2PAK
***ical
Trans MOSFET N-CH 100V 80A 3-Pin(2+Tab) D2PAK T/R
***r Electronics
Power Field-Effect Transistor, 80A I(D), 100V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***ment14 APAC
MOSFET, N CH, 100V, 80A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:100V; On Resistance Rds(on):12mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:300W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:80A; Package / Case:D2-PAK; Power Dissipation Pd:300W; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:100V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
***icroelectronics
N-channel 100V - 0.019Y - 80A - TO-220 - D2PAK - I2PAK
***et
Trans MOSFET N-CH 100V 80A 3-Pin(2+Tab) D2PAK T/R
***ure Electronics
N-Channel 100 V 0.023 O Surface Mount STripFET II Power MosFet - D2PAK
***r Electronics
Power Field-Effect Transistor, 80A I(D), 100V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***nell
MOSFET, N CH, 100V, 80A, D2PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 40A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.019ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power
Teil # Mfg. Beschreibung Aktie Preis
FDMD8680
DISTI # V79:2366_23246347		ON Semiconductor80V DUAL N-CHANNEL POWERTRENCH1500
  • 9000:$0.9697
  • 6000:$0.9986
  • 3000:$1.0327
  • 1000:$1.0814
  • 500:$1.2889
  • 100:$1.4902
  • 10:$2.0882
  • 1:$2.7625
FDMD8680
DISTI # V72:2272_16917425		ON Semiconductor80V DUAL N-CHANNEL POWERTRENCH1480
  • 1000:$1.1126
  • 500:$1.2652
  • 250:$1.4258
  • 100:$1.4788
  • 25:$1.7710
  • 10:$1.9678
  • 1:$2.7743
FDMD8680
DISTI # V36:1790_16917425		ON Semiconductor80V DUAL N-CHANNEL POWERTRENCH0
  • 3000000:$1.0110
  • 1500000:$1.0120
  • 300000:$1.0920
  • 30000:$1.2110
  • 3000:$1.2300
FDMD8680
DISTI # FDMD8680OSTR-ND		ON SemiconductorMOSFET 2 N-CH 80V 66A 8-PQFN
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		On Order
  • 6000:$1.1845
  • 3000:$1.2301
FDMD8680
DISTI # FDMD8680OSCT-ND		ON SemiconductorMOSFET 2 N-CH 80V 66A 8-PQFN
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 1000:$1.3609
  • 500:$1.6424
  • 100:$1.9991
  • 10:$2.4870
  • 1:$2.7700
FDMD8680
DISTI # FDMD8680OSDKR-ND		ON SemiconductorMOSFET 2 N-CH 80V 66A 8-PQFN
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 1000:$1.3609
  • 500:$1.6424
  • 100:$1.9991
  • 10:$2.4870
  • 1:$2.7700
FDMD8680
DISTI # 32380432		ON Semiconductor80V DUAL N-CHANNEL POWERTRENCH1500
  • 8:$2.7625
FDMD8680
DISTI # 25924843		ON Semiconductor80V DUAL N-CHANNEL POWERTRENCH1480
  • 6:$2.7743
FDMD8680
DISTI # FDMD8680		ON SemiconductorDual N-Channel PowerTrench MOSFET 80V Drain to Source Voltage 66A Continuous Drain Current 39W Power Dissipation Surface Mount 8-Pin PQFN T/R - Tape and Reel (Alt: FDMD8680)
RoHS: Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 30000:$1.0709
  • 18000:$1.0979
  • 12000:$1.1119
  • 6000:$1.1269
  • 3000:$1.1339
FDMD8680
DISTI # 96Y9209		ON SemiconductorMOSFET, DUAL N-CH, 80V, 66A, PQFN-8,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:66A,Drain Source Voltage Vds:80V,On Resistance Rds(on):0.0033ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power RoHS Compliant: Yes2549
  • 1000:$1.0100
  • 500:$1.1700
  • 250:$1.2600
  • 100:$1.3400
  • 50:$1.4500
  • 25:$1.5700
  • 10:$1.6800
  • 1:$1.9700
FDMD8680
DISTI # 512-FDMD8680		ON SemiconductorMOSFET 80V Dual N Chnl PowerTrench MOSFET
RoHS: Compliant		759
  • 1:$2.5500
  • 10:$2.1700
  • 100:$1.7300
  • 500:$1.5100
  • 1000:$1.2500
  • 3000:$1.1700
  • 6000:$1.1200
FDMD8680
DISTI # 2617742		ON SemiconductorMOSFET, DUAL N-CH, 80V, 66A, PQFN-82549
  • 500:£0.7940
  • 250:£0.8510
  • 100:£0.9090
  • 10:£1.1700
  • 1:£1.5200
FDMD8680
DISTI # 2617742		ON SemiconductorMOSFET, DUAL N-CH, 80V, 66A, PQFN-8
RoHS: Compliant		2549
  • 100:$3.3800
  • 10:$4.2100
  • 1:$4.6600
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Verfügbarkeit
Aktie:
594
Auf Bestellung:
2577
Menge eingeben:
Der aktuelle Preis von FDMD8680 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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