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SI4497DY-T1-GE3

SI4497DY-T1-GE3
Mfr. #:
SI4497DY-T1-GE3
Hersteller:
Vishay
Beschreibung:
MOSFET P-CH 30V 36A 8-SOIC
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SI4497DY-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
SI4497DY-T1-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Tags
SI449, SI44, SI4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET P-CH 30V 36A 8-Pin SOIC N T/R
***et Europe
Trans MOSFET P-CH 30V 24.8A 8-Pin SOIC T/R
***ponent Sense
P-CHANNEL 30 V D-S MOSFET-TRANSISTOR FET
***ark
MOSFET, P-CH, -30V, -36A, SOIC-8
***ied Electronics & Automation
P-Channel 30-V (D-S) MOSFET Semiconductor
***Components
P-Ch MOSFET SO-8 BWL 30V 3.3mohm @ 10V
***i-Key
MOSFET P-CH 30V 36A 8-SOIC
***ure Electronics
P-CH MOSFET SO-8 BWL 30V 3.3MOHM @ 10V
***
P-CHANNEL 30-V (D-S)
***ment14 APAC
Prices include import duty and tax. MOSFET, P-CH, -30V, -36A, SOIC; Transistor Polarity:P Channel; Continuous Drain Current Id:-36A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.0027ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2.5V; Power Dissipation Pd:7.8W; Transistor Case Style:SOIC; No. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:TrenchFET Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (20-Jun-2016)
***nell
MOSFET, CANALE P, -30V, -36A, SOIC; Polarità Transistor:Canale P; Corrente Continua di Drain Id:-36A; Tensione Drain Source Vds:-30V; Resistenza di Attivazione Rds(on):0.0027ohm; Tensione Vgs di Misura Rds(on):-10V; Tensione di Soglia Vgs:-2.5V; Dissipazione di Potenza Pd:7.8W; Modello Case Transistor:SOIC; No. di Pin:8Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:TrenchFET Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (20-Jun-2016)
Si4 MOSFETs
Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
TrenchFET® P-Channel MOSFETs
Vishay Siliconix TrenchFET® P-Channel MOSFETs feature the newest generation of P-channel silicon technology. This enables these devices to provide industry-best on-resistance specifications like 1.9 milliohms in the PowerPAK® SO-8. The P-channel MOSFETs have on-resistance as low as half the level of the next best devices on the market. These MOSFETs are available in two variants that employ either Generation III or Generation IV technology. The Gen-IV P-channel MOSFETs offer low on-resistance and come in a thermally enhanced compact package.
Teil # Mfg. Beschreibung Aktie Preis
SI4497DY-T1-GE3
DISTI # V72:2272_09215572		Vishay IntertechnologiesTrans MOSFET P-CH 30V 24.8A 8-Pin SOIC N T/R
RoHS: Compliant		16
  • 10:$1.5495
  • 1:$2.0491
SI4497DY-T1-GE3
DISTI # V36:1790_09215572		Vishay IntertechnologiesTrans MOSFET P-CH 30V 24.8A 8-Pin SOIC N T/R
RoHS: Compliant		0
  • 2500000:$0.8290
  • 1250000:$0.8292
  • 250000:$0.8407
  • 25000:$0.8589
  • 2500:$0.8618
SI4497DY-T1-GE3
DISTI # SI4497DY-T1-GE3CT-ND		Vishay SiliconixMOSFET P-CH 30V 36A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		9In Stock
  • 1000:$0.9535
  • 500:$1.1507
  • 100:$1.4006
  • 10:$1.7430
  • 1:$1.9400
SI4497DY-T1-GE3
DISTI # SI4497DY-T1-GE3DKR-ND		Vishay SiliconixMOSFET P-CH 30V 36A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		9In Stock
  • 1000:$0.9535
  • 500:$1.1507
  • 100:$1.4006
  • 10:$1.7430
  • 1:$1.9400
SI4497DY-T1-GE3
DISTI # SI4497DY-T1-GE3TR-ND		Vishay SiliconixMOSFET P-CH 30V 36A 8-SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		On Order
  • 5000:$0.8299
  • 2500:$0.8618
SI4497DY-T1-GE3
DISTI # 30604746		Vishay IntertechnologiesTrans MOSFET P-CH 30V 24.8A 8-Pin SOIC N T/R
RoHS: Compliant		121
  • 11:$2.3125
SI4497DY-T1-GE3
DISTI # 32020721		Vishay IntertechnologiesTrans MOSFET P-CH 30V 24.8A 8-Pin SOIC N T/R
RoHS: Compliant		16
  • 9:$2.0491
SI4497DY-T1-GE3
DISTI # SI4497DY-T1-GE3		Vishay IntertechnologiesTrans MOSFET P-CH 30V 24.8A 8-Pin SOIC T/R (Alt: SI4497DY-T1-GE3)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel		Asia - 0
    SI4497DY-T1-GE3
    DISTI # SI4497DY-T1-GE3    		Vishay IntertechnologiesTrans MOSFET P-CH 30V 24.8A 8-Pin SOIC T/R (Alt: SI4497DY-T1-GE3)
    RoHS: Compliant
    Min Qty: 2500
    Container: Tape and Reel    		Europe - 0
    • 25000:€0.8079
    • 15000:€0.8549
    • 10000:€0.9629
    • 5000:€1.1669
    • 2500:€1.6659
    SI4497DY-T1-GE3
    DISTI # SI4497DY-T1-GE3    		Vishay IntertechnologiesTrans MOSFET P-CH 30V 24.8A 8-Pin SOIC T/R - Tape and Reel (Alt: SI4497DY-T1-GE3)
    RoHS: Compliant
    Min Qty: 2500
    Container: Reel    		Americas - 0
    • 25000:$0.7789
    • 15000:$0.8009
    • 10000:$0.8229
    • 5000:$0.8579
    • 2500:$0.8849
    SI4497DY-T1-GE3
    DISTI # 04X9761    		Vishay IntertechnologiesMOSFET, P CHANNEL, -30V, -36A, SOIC-8,Transistor Polarity:P Channel,Continuous Drain Current Id:-36A,Drain Source Voltage Vds:-30V,On Resistance Rds(on):0.0027ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-1V RoHS Compliant: Yes0
    • 500:$1.1300
    • 250:$1.3200
    • 100:$1.5100
    • 50:$1.6900
    • 25:$1.8800
    • 10:$2.0300
    • 1:$2.1300
    SI4497DY-T1-GE3
    DISTI # 86R3888    		Vishay IntertechnologiesMOSFET, P CHANNEL, -30V, -36A, SOIC-8, FULL REEL,Transistor Polarity:P Channel,Continuous Drain Current Id:-36A,Drain Source Voltage Vds:-30V,On Resistance Rds(on):0.0027ohm,Rds(on) Test Voltage Vgs:-10V,No. of Pins:8Pins RoHS Compliant: Yes0
    • 10000:$0.7600
    • 6000:$0.7910
    • 4000:$0.8210
    • 2000:$0.9120
    • 1000:$0.9610
    • 1:$1.0300
    SI4497DY-T1-GE3
    DISTI # 781-SI4497DY-T1-GE3    		Vishay IntertechnologiesMOSFET -30V Vds 20V Vgs SO-8
    RoHS: Compliant    		773
    • 1:$1.8800
    • 10:$1.5600
    • 100:$1.2100
    • 500:$1.0600
    • 1000:$0.8810
    • 2500:$0.8200
    • 5000:$0.7900
    SI4497DY-T1-GE3
    DISTI # 1807292    		Vishay IntertechnologiesP-CH MOSFET SO-8 BWL 30V 3.3MOHM @ 10V, RL1470
    • 2500:£0.7660
    SI4497DY-T1-GE3Vishay IntertechnologiesMOSFET -30V Vds 20V Vgs SO-8
    RoHS: Compliant    		Americas - 2500
      SI4497DY-T1-GE3
      DISTI # 2646384      		Vishay IntertechnologiesMOSFET, P-CH, -30V, -36A, SOIC
      RoHS: Compliant      		0
      • 500:$1.6000
      • 100:$1.8200
      • 10:$2.3700
      • 1:$2.8300
      SI4497DY-T1-GE3
      DISTI # 2679694      		Vishay IntertechnologiesMOSFET, P-CH, -30V, -36A, SOIC
      RoHS: Compliant      		0
      • 2500:$1.5400
      SI4497DY-T1-GE3
      DISTI # 2646384      		Vishay IntertechnologiesMOSFET, P-CH, -30V, -36A, SOIC0
      • 1000:£0.8450
      • 500:£0.8620
      • 100:£0.8800
      • 50:£1.1400
      • 5:£1.2400
      SI4497DY-T1-GE3
      DISTI # C1S803605074339      		Vishay IntertechnologiesMOSFETs
      RoHS: Compliant      		121
      • 100:$1.1900
      • 50:$1.4000
      • 10:$1.5400
      • 1:$1.8500
      SI4497DY-T1-GE3
      DISTI # XSKDRSA00000181      		 P-CH MOSFET 30V 36A SOIC8
      RoHS: Compliant      		800 in Stock0 on Order
      • 200:$1.8200
      Bild Teil # Beschreibung
      SI4497DY-T1-GE3

      Mfr.#: SI4497DY-T1-GE3

      OMO.#: OMO-SI4497DY-T1-GE3

      		 MOSFET -30V Vds 20V Vgs SO-8
      SI4497DY-T1-E3

      Mfr.#: SI4497DY-T1-E3

      OMO.#: OMO-SI4497DY-T1-E3-1190

      		 Neu und Original
      SI4497DY-T1-GE3

      Mfr.#: SI4497DY-T1-GE3

      OMO.#: OMO-SI4497DY-T1-GE3-VISHAY

      		 MOSFET P-CH 30V 36A 8-SOIC
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      4000
      Menge eingeben:
      Der aktuelle Preis von SI4497DY-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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