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IRF3703PBF

IRF3703PBF
Mfr. #:
IRF3703PBF
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET 30V 1 N-CH HEXFET 2.8mOhms 209nC
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IRF3703PBF Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRF3703PBF DatasheetIRF3703PBF Datasheet (P4-P6)IRF3703PBF Datasheet (P7-P9)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-220-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
30 V
Id - Kontinuierlicher Drainstrom:
210 A
Rds On - Drain-Source-Widerstand:
2.8 mOhms
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
209 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Pd - Verlustleistung:
230 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Rohr
Höhe:
15.65 mm
Länge:
10 mm
Transistortyp:
1 N-Channel
Typ:
Smps-MOSFET
Breite:
4.4 mm
Marke:
Infineon-Technologien
Abfallzeit:
24 ns
Produktart:
MOSFET
Anstiegszeit:
123 ns
Werkspackungsmenge:
1000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
53 ns
Typische Einschaltverzögerungszeit:
18 ns
Teil # Aliase:
SP001574662
Gewichtseinheit:
0.211644 oz
Tags
IRF3703, IRF370, IRF37, IRF3, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 2.3Milliohms;ID 210A;TO-220AB;PD 230W;-55de
***ineon SCT
30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
***ure Electronics
Single N-Channel 30 V 2.8 mOhm 209 nC HEXFET® Power Mosfet - TO-220-3
***Yang
Trans MOSFET N-CH 30V 210A 3-Pin(3+Tab) TO-220AB - Rail/Tube
*** Electronics
IRF3703PBF MOSFET N-CH 30V 210A TO-220A RoHS
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 75A I(D), 30V, 0.0039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:210A; On Resistance Rds(On):0.0028Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Product Range:-Rohs Compliant: Yes
***ment14 APAC
MOSFET, N, 30V, 210A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:210A; Drain Source Voltage Vds:30V; On Resistance Rds(on):2.8mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:230W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:210A; Junction to Case Thermal Resistance A:0.65°C/W; On State resistance @ Vgs = 10V:2.8ohm; Package / Case:TO-220AB; Power Dissipation Pd:230W; Power Dissipation Pd:230W; Pulse Current Idm:1000A; Termination Type:Through Hole; Voltage Vds Typ:30V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 210 / Drain-Source Voltage (Vds) V = 30 / ON Resistance (Rds(on)) mOhm = 2.8 / Gate-Source Voltage V = 20 / Fall Time ns = 24 / Rise Time ns = 123 / Turn-OFF Delay Time ns = 53 / Turn-ON Delay Time ns = 18 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-220 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Power Dissipation (Pd) W = 230
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 2.4Milliohms;ID 260A;TO-220AB;PD 290W;-55de
***ineon SCT
30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature
***Yang
Trans MOSFET N-CH 30V 260A 3-Pin(3+Tab) TO-220AB - Rail/Tube
***el Electronic
Power Field-Effect Transistor, 260A I(D), 30V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
***ark
Mosfet IC; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:75A; On Resistance, Rds(on):2.4mohm; Rds(on) Test Voltage, Vgs:20V; Package/Case:3-TO-220; No. of Pins:3 ;RoHS Compliant: Yes
***ure Electronics
Single N-Channel 30 V 1.95 mOhm 57 nC HEXFET® Power Mosfet - TO-220-3
***ineon SCT
30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 260A I(D), 30V, 0.00195ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ment14 APAC
MOSFET, N CH, 30V, 190A, TO220; Transistor Polarity:N Channel; Continuous Drain Current Id:260A; Drain Source Voltage Vds:30V; On Resistance Rds(on):1.6mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.9V; Power Dissipation Pd:230W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Cont Current Id @ 100°C:190A; Cont Current Id @ 25°C:260A; Current Id Max:260A; Package / Case:TO-220AB; Power Dissipation Pd:230W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:30V; Voltage Vgs Max:1.9V; Voltage Vgs Rds on Measurement:10V
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 2.6Milliohms;ID 260A;TO-220AB;PD 330W;-55de
***ineon SCT
30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
***ure Electronics
Single N-Channel 30 V 4 mOhm 110 nC HEXFET® Power Mosfet - TO-220-3
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Fully Avalanche Rated; Logic Level
***p One Stop
Trans MOSFET N-CH 30V 260A 3-Pin(3+Tab) TO-220AB Tube
***ment14 APAC
MOSFET, N, 30V, 200A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:200A; Drain Source Voltage Vds:30V; On Resistance Rds(on):3mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.5V; Power Dissipation Pd:200W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:260A; Junction to Case Thermal Resistance A:0.75°C/W; On State resistance @ Vgs = 10V:3mohm; Package / Case:TO-220AB; Power Dissipation Pd:200W; Power Dissipation Pd:200W; Pulse Current Idm:1040A; Termination Type:Through Hole; Voltage Vds Typ:30V; Voltage Vgs Max:2.5V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.5V
***emi
N-Channel PowerTrench® MOSFET 30V, 80A, 2.5mΩ
***Yang
Trans MOSFET N-CH 30V 80A 3-Pin(3+Tab) TO-220AB Tube - Rail/Tube
***ure Electronics
N-Channel 30 V 2.5 mOhm PowerTrench Mosfet - TO-220
***r Electronics
Power Field-Effect Transistor, 80A I(D), 30V, 0.0029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:80A; On Resistance Rds(On):0.0025Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:1.6V; Threshold Voltage Vgs:20V; Msl:- Rohs Compliant: Yes
***rchild Semiconductor
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(on) and fast switching speed.
***ment14 APAC
MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:30V; On Resistance Rds(on):2.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.6V; Power Dissipation Pd:254W; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:SOT-78B; Capacitance Ciss Typ:9200pF; Current Id Max:80A; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; Junction to Case Thermal Resistance A:0.59°C/W; On State Resistance Max:2.5mohm; On State Resistance Typ:1.9mohm; Package / Case:TO-220; Pin Configuration:G(1),D(2)S(3); Power Dissipation Pd:254W; Power Dissipation Pd:254W; Pulse Current Idm:556A; Termination Type:Through Hole; Voltage Vds Typ:30V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.5V; Voltage Vgs th Min:1V
***essParts.Net
FAIRCHILD ISL9N302AP3 / MOSFET N-CH PWM 30V 75A TO-220
***et
TO-220AB,SINGLE,NCH,30V,0.0023 OHM LOGIC LEVEL DENSE TRENCH
***ser
MOSFETs N-Channel PWM Logic Level
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:75A; On Resistance, Rds(on):2.5mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-220AB ;RoHS Compliant: Yes
***ure Electronics
N-Channel 30 V 4.1 mOhm Flange Mount PowerTrench® Mosfet - TO-220
***emi
N-Channel PowerTrench® MOSFET 30V, 156A, 4.1mΩ
***ical
Trans MOSFET N-CH 30V 19A 3-Pin (3+Tab) TO-220AB Rail
*** Stop Electro
Power Field-Effect Transistor, 19A I(D), 30V, 0.0046ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***rchild Semiconductor
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.
Teil # Mfg. Beschreibung Aktie Preis
IRF3703PBF
DISTI # C1S322000480029		Infineon Technologies AGTrans MOSFET N-CH 30V 210A 3-Pin(3+Tab) TO-220AB Tube
RoHS: Compliant		1
  • 1:$4.2100
IRF3703PBF
DISTI # IRF3703PBF-ND		Infineon Technologies AGMOSFET N-CH 30V 210A TO-220AB
RoHS: Compliant
Min Qty: 1
Container: Tube		3209In Stock
  • 1000:$1.6555
  • 500:$1.9630
  • 100:$2.4241
  • 10:$2.9560
  • 1:$3.3100
IRF3703PBF
DISTI # SP001574662		Infineon Technologies AGTrans MOSFET N-CH 30V 210A 3-Pin(3+Tab) TO-220AB (Alt: SP001574662)
RoHS: Compliant
Min Qty: 1		Europe - 2750
  • 1:€1.9900
  • 10:€1.9900
  • 25:€1.9900
  • 50:€1.9900
  • 100:€1.6900
  • 500:€1.4900
  • 1000:€1.1900
IRF3703PBF
DISTI # IRF3703PBF		Infineon Technologies AGTrans MOSFET N-CH 30V 210A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRF3703PBF)
RoHS: Compliant
Min Qty: 3000
Container: Tube		Americas - 0
  • 3000:$1.2389
  • 5000:$1.1939
  • 8000:$1.1509
  • 15000:$1.1119
  • 30000:$1.0919
IRF3703PBF
DISTI # IRF3703PBF		Infineon Technologies AGTrans MOSFET N-CH 30V 210A 3-Pin(3+Tab) TO-220AB (Alt: IRF3703PBF)
RoHS: Compliant
Min Qty: 1000		Asia - 0
    IRF3703PBF
    DISTI # 38K2778    		Infineon Technologies AGMOSFET Transistor, N Channel, 210 A, 30 V, 2.8 mohm, 10 V, 4 V RoHS Compliant: Yes519
    • 1:$2.8500
    • 10:$2.4200
    • 25:$2.3100
    • 50:$2.2100
    • 100:$2.1000
    • 250:$1.9900
    • 500:$1.7900
    IRF3703PBF.
    DISTI # 27AC6868    		Infineon Technologies AGTransistor Polarity:N Channel,Continuous Drain Current Id:210A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0028ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power Dissipation Pd:230W,No. of Pins:3Pins RoHS Compliant: Yes0
    • 1:$2.8500
    • 10:$2.4200
    • 25:$2.3100
    • 50:$2.2100
    • 100:$2.1000
    • 250:$1.9900
    • 500:$1.7900
    IRF3703PBF
    DISTI # 70017482    		Infineon Technologies AGMOSFET,Power,N-Ch,VDSS 30V,RDS(ON) 2.3 Milliohms,ID 210A,TO-220AB,PD 230W,-55de
    RoHS: Compliant    		1861
    • 1:$4.7300
    • 2:$4.6350
    • 5:$4.4940
    • 10:$4.3040
    • 25:$4.0210
    IRF3703PBFInfineon Technologies AGSingle N-Channel 30 V 2.8 mOhm 209 nC HEXFET Power Mosfet - TO-220-3
    RoHS: Compliant    		2810Tube
    • 10:$1.7100
    • 100:$1.5400
    • 500:$1.3400
    IRF3703PBFInfineon Technologies AGPower Field-Effect Transistor, 75A I(D), 30V, 0.0039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
    RoHS: Compliant    		475
    • 1000:$1.4200
    • 500:$1.5000
    • 100:$1.5600
    • 25:$1.6200
    • 1:$1.7500
    IRF3703PBFInternational RectifierPower Field-Effect Transistor, 75A I(D), 30V, 0.0039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
    RoHS: Compliant    		780
    • 1000:$1.4200
    • 500:$1.5000
    • 100:$1.5600
    • 25:$1.6200
    • 1:$1.7500
    IRF3703PBF
    DISTI # 942-IRF3703PBF    		Infineon Technologies AGMOSFET 30V 1 N-CH HEXFET 2.8mOhms 209nC
    RoHS: Compliant    		887
    • 1:$2.8500
    • 10:$2.4200
    • 100:$2.1000
    • 250:$1.9900
    • 500:$1.7900
    • 1000:$1.5100
    IRF3703PBF
    DISTI # IRF3703PBF    		Infineon Technologies AGTransistor: N-MOSFET,unipolar,30V,210A,230W,TO220AB43
    • 1:$2.3600
    • 3:$2.1400
    • 10:$1.7600
    • 100:$1.5700
    IRF3703PBFInternational Rectifier 
    RoHS: Compliant    		Europe - 130
      IRF3703PBF
      DISTI # IRF3703PBF      		Infineon Technologies AGN-Ch 30V 210A 230W 0,0028R TO220AB
      RoHS: Compliant      		480
      • 10:€1.5500
      • 50:€1.2500
      • 200:€1.1500
      • 500:€1.1100
      IRF3703PBFInternational RectifierINSTOCK1113
        IRF3703PBF
        DISTI # 8657580        		Infineon Technologies AGMOSFET, N, 30V, 210A, TO-220
        RoHS: Compliant        		519
        • 1:$4.5100
        • 10:$3.8400
        • 100:$3.3200
        • 250:$3.1500
        • 500:$2.8400
        • 1000:$2.4000
        IRF3703PBF
        DISTI # 8657580        		Infineon Technologies AGMOSFET, N, 30V, 210A, TO-220
        RoHS: Compliant        		519
        • 1:£2.4500
        • 10:£1.8500
        • 100:£1.6100
        • 250:£1.5200
        • 500:£1.3600
        IRF3703PBF
        DISTI # XSKDRABV0021343        		INF 
        RoHS: Compliant        		756
        • 350:$2.5600
        • 756:$2.3400
        IRF3703PBF
        DISTI # XSFP00000002593        		Infineon Technologies AGPower Field-EffectTransistor,57AI(D),100V,0.023ohm,1-Element,N-Channel,Silicon,Metal-oxideSemiconductor FET,TO-220AB
        RoHS: Compliant        		1891
        • 100:$2.2800
        • 1891:$2.1400
        Bild Teil # Beschreibung
        XTR110KU/1K

        Mfr.#: XTR110KU/1K

        OMO.#: OMO-XTR110KU-1K

        		 Sensor Interface Prec Vltg-To-Crnt Cnertr/Trnsmtr
        HFA15TB60PBF

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        OMO.#: OMO-HFA15TB60PBF

        		 Rectifiers 15A 600V Ultrafast diode
        STD12NF06L-1

        Mfr.#: STD12NF06L-1

        OMO.#: OMO-STD12NF06L-1

        		 MOSFET N-Ch 60 Volt 12 Amp
        860040574006

        Mfr.#: 860040574006

        OMO.#: OMO-860040574006

        		 Aluminum Electrolytic Capacitors - Radial Leaded WCAP-ATUL 35V 220uF 20% ESR=90mOhms
        C0805X682K5RAC7800

        Mfr.#: C0805X682K5RAC7800

        OMO.#: OMO-C0805X682K5RAC7800

        		 Multilayer Ceramic Capacitors MLCC - SMD/SMT 50V 6800pF X7R 0805 10%
        CRCW08050000Z0EA

        Mfr.#: CRCW08050000Z0EA

        OMO.#: OMO-CRCW08050000Z0EA

        		 Thick Film Resistors - SMD 1/8watt ZEROohm Jumper
        860040675011

        Mfr.#: 860040675011

        OMO.#: OMO-860040675011

        		 Aluminum Electrolytic Capacitors - Radial Leaded WCAP-ATUL 50V 470uF 20% ESR=48mOhms
        HFA15TB60PBF

        Mfr.#: HFA15TB60PBF

        OMO.#: OMO-HFA15TB60PBF-INFINEON-TECHNOLOGIES

        		 Rectifiers 15A 600V Ultrafast diode
        CRCW08050000Z0EA

        Mfr.#: CRCW08050000Z0EA

        OMO.#: OMO-CRCW08050000Z0EA-VISHAY-DALE

        		 Thick Film Resistors - SMD 1/8watt ZEROohm Jumpe
        XTR110KU/1K

        Mfr.#: XTR110KU/1K

        OMO.#: OMO-XTR110KU-1K-TEXAS-INSTRUMENTS

        		 Sensor Interface Prec Vltg-To-Crnt Cnertr/Trnsmt
        Verfügbarkeit
        Aktie:
        Available
        Auf Bestellung:
        1985
        Menge eingeben:
        Der aktuelle Preis von IRF3703PBF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
        Referenzpreis (USD)
        Menge
        Stückpreis
        ext. Preis
        1
        2,84 $
        2,84 $
        10
        2,41 $
        24,10 $
        100
        2,09 $
        209,00 $
        250
        1,98 $
        495,00 $
        500
        1,78 $
        890,00 $
        1000
        1,50 $
        1 500,00 $
        2000
        1,43 $
        2 860,00 $
        5000
        1,37 $
        6 850,00 $
        Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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