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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| FDC2612 DISTI # FDC2612CT-ND | ON Semiconductor | MOSFET N-CH 200V 1.1A SSOT-6 Min Qty: 1 Container: Cut Tape (CT) | 2849In Stock |
|
| FDC2612 DISTI # FDC2612DKR-ND | ON Semiconductor | MOSFET N-CH 200V 1.1A SSOT-6 Min Qty: 1 Container: Digi-Reel® | 2849In Stock |
|
| FDC2612 DISTI # FDC2612TR-ND | ON Semiconductor | MOSFET N-CH 200V 1.1A SSOT-6 Min Qty: 3000 Container: Tape & Reel (TR) | On Order |
|
| FDC2612_F095 DISTI # FDC2612_F095-ND | ON Semiconductor | MOSFET N-CH 200V 1.1A 6-SSOT Min Qty: 3000 Container: Tape & Reel (TR) | Limited Supply - Call | |
| FDC2612 DISTI # FDC2612 | ON Semiconductor | Trans MOSFET N-CH 200V 1.1A 6-Pin SuperSOT T/R - Tape and Reel (Alt: FDC2612) RoHS: Compliant Min Qty: 3000 Container: Reel | Americas - 0 |
|
| FDC2612 DISTI # FDC2612 | ON Semiconductor | Trans MOSFET N-CH 200V 1.1A 6-Pin SuperSOT T/R (Alt: FDC2612) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel | Asia - 0 |
|
| FDC2612 DISTI # 82C2439 | ON Semiconductor | MOSFET Transistor, N Channel, 1.1 A, 200 V, 0.605 ohm, 10 V, 4 V RoHS Compliant: Yes RoHS: Compliant | 0 |
|
| FDC2612 DISTI # 31Y1343 | ON Semiconductor | MOSFET, N CH, 200V, 1.1A, SOT-23-6,Transistor Polarity:N Channel,Continuous Drain Current Id:1.1A,Drain Source Voltage Vds:200V,On Resistance Rds(on):0.605ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V RoHS Compliant: Yes RoHS: Compliant | 0 |
|
| FDC2612 DISTI # 512-FDC2612 | ON Semiconductor | MOSFET 200V NCh PowerTrench RoHS: Compliant | 0 |
|
| FDC2612_F095 DISTI # 512-FDC2612_F095 | ON Semiconductor | MOSFET 200V 1.1A N-CH POWERTRENCH RoHS: Compliant | 0 | |
| FDC2612 DISTI # FDC2612 | ON Semiconductor | Transistor: N-MOSFET,unipolar,200V,1.1A,1.6W,SuperSOT-6 | 14 |
|
| FDC2612 DISTI # 2454150 | ON Semiconductor | MOSFET, N CH, 200V, 1.1A, SOT-23-6 RoHS: Compliant | 0 |
|
| FDC2612 DISTI # 2454150RL | ON Semiconductor | MOSFET, N CH, 200V, 1.1A, SOT-23-6 RoHS: Compliant | 0 |
|
| FDC2612 DISTI # 2454150RL | ON Semiconductor | MOSFET, N CH, 200V, 1.1A, SOT-23-6 RoHS: Compliant | 0 |
|
| FDC2612 DISTI # 2454150 | ON Semiconductor | MOSFET, N CH, 200V, 1.1A, SOT-23-6 RoHS: Compliant | 0 |
|
| Bild | Teil # | Beschreibung |
|---|---|---|
|
Mfr.#: FDC2212DNTT OMO.#: OMO-FDC2212DNTT |
Proximity Sensors Two channel, 28 bit noise-immune capacitive sensing solution for proximity sensing 12-WSON -40 to 125 |
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Mfr.#: FDC2212DNTR OMO.#: OMO-FDC2212DNTR |
Proximity Sensors Two channel, 28 bit noise-immune capacitive sensing solution for proximity sensing 12-WSON -40 to 125 |
|
Mfr.#: FDC2114RGHT OMO.#: OMO-FDC2114RGHT |
Proximity Sensors Four channel, 12 bit noise-immune capacitive sensing solution for proximity sensing 16-WQFN -40 to 125 |
|
Mfr.#: FDC2214PROXSEN-EVM OMO.#: OMO-FDC2214PROXSEN-EVM |
Touch Sensor Development Tools FDC2214PROXSEN-EVM |
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Mfr.#: FDC20-24S33W OMO.#: OMO-FDC20-24S33W-1190 |
Neu und Original |
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Mfr.#: FDC20-24T0515 OMO.#: OMO-FDC20-24T0515-1190 |
Neu und Original |
|
Mfr.#: FDC2114RGHR |
IC CAPACITIVE SENSING |
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Mfr.#: FDC2114RGHT |
IC CAPACITIVE SENSING |
|
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Mfr.#: FDC2214RGHR |
IC CAPACITIVE SENSING |
|
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Mfr.#: FDC2512-CUT TAPE OMO.#: OMO-FDC2512-CUT-TAPE-1190 |
Neu und Original |