GS81302S36GE-333I

GS81302S36GE-333I
Mfr. #:
GS81302S36GE-333I
Hersteller:
GSI Technology
Beschreibung:
SRAM 1.8 or 1.5V 4M x 36 144M
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
GS81302S36GE-333I Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
GS81302S36GE-333I Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
GSI-Technologie
Produktkategorie:
SRAM
RoHS:
Y
Speichergröße:
144 Mbit
Organisation:
4 M x 36
Maximale Taktfrequenz:
333 MHz
Oberflächentyp:
Parallel
Versorgungsspannung - Max.:
1.9 V
Versorgungsspannung - Min.:
1.7 V
Versorgungsstrom - Max.:
1.01 A
Minimale Betriebstemperatur:
- 40 C
Maximale Betriebstemperatur:
+ 85 C
Montageart:
SMD/SMT
Paket / Koffer:
BGA-165
Verpackung:
Tablett
Speichertyp:
DDR-II
Serie:
GS81302S36GE
Typ:
SigmaSIO DDR-II
Marke:
GSI-Technologie
Feuchtigkeitsempfindlich:
ja
Produktart:
SRAM
Werkspackungsmenge:
10
Unterkategorie:
Speicher & Datenspeicherung
Handelsname:
SigmaSIO DDR-II
Tags
GS81302S36GE-3, GS81302S36G, GS81302S3, GS81302S, GS81302, GS8130, GS813, GS81, GS8
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
SRAM Chip Sync Dual 1.8V 144M-Bit 4M x 36 0.45ns 165-Pin FBGA Tray
DDR SRAMs
GSI Technology SigmaDDR™ SRAMs are synchronous memories with a common read and write data bus that combine capacity and performance with transaction rates unequaled by competitors. SigmaDDR SRAMs "DDR" refers to their ability to transfer 2 beats of data on the data bus in a single clock cycle. SigmaDDR memories are ideal for applications that alternate between read and write operations infrequently, at operating speeds of 250 MHz and above. GSI’s SigmaDDR devices are compatible with all competitor Double Data Rate SRAMs.
Bild Teil # Beschreibung
GS81302S18E-250I

Mfr.#: GS81302S18E-250I

OMO.#: OMO-GS81302S18E-250I

SRAM 1.8 or 1.5V 8M x 18 144M
GS81302S09GE-300

Mfr.#: GS81302S09GE-300

OMO.#: OMO-GS81302S09GE-300

SRAM 1.8 or 1.5V 16M x 9 144M
GS81302S08E-250I

Mfr.#: GS81302S08E-250I

OMO.#: OMO-GS81302S08E-250I

SRAM 1.8 or 1.5V 16M x 8 144M
GS81302S18GE-300

Mfr.#: GS81302S18GE-300

OMO.#: OMO-GS81302S18GE-300

SRAM 1.8 or 1.5V 8M x 18 144M
GS81302S36AGD-333

Mfr.#: GS81302S36AGD-333

OMO.#: OMO-GS81302S36AGD-333

SRAM SigmaSIO DDR-II, 144Mb, x36, 333MHz, Commercial Temp
GS81302S09E-333I

Mfr.#: GS81302S09E-333I

OMO.#: OMO-GS81302S09E-333I

SRAM 1.8 or 1.5V 16M x 9 144M
GS81302S18AGD-333I

Mfr.#: GS81302S18AGD-333I

OMO.#: OMO-GS81302S18AGD-333I

SRAM SigmaSIO DDR-II, 144Mb, x18, 333MHz, Industrial Temp
GS81302S18GE-375I

Mfr.#: GS81302S18GE-375I

OMO.#: OMO-GS81302S18GE-375I

SRAM 1.8 or 1.5V 8M x 18 144M
GS81302S08GE-375I

Mfr.#: GS81302S08GE-375I

OMO.#: OMO-GS81302S08GE-375I

SRAM 1.8 or 1.5V 16M x 8 144M
GS81302S36AGD-375I

Mfr.#: GS81302S36AGD-375I

OMO.#: OMO-GS81302S36AGD-375I

SRAM SigmaSIO DDR-II, 144Mb, x36, 375MHz, Industrial Temp
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
3500
Menge eingeben:
Der aktuelle Preis von GS81302S36GE-333I dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
10
157,15 $
1 571,50 $
30
145,93 $
4 377,90 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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