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IGLD60R070D1AUMA1

IGLD60R070D1AUMA1
Mfr. #:
IGLD60R070D1AUMA1
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET 600V CoolGaN Power Transistor
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IGLD60R070D1AUMA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
IGLD60R070D1AUMA1 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
GaN
Montageart:
SMD/SMT
Paket / Koffer:
PG-LSON-8
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
600 V
Id - Kontinuierlicher Drainstrom:
15 A
Rds On - Drain-Source-Widerstand:
70 mOhms
Vgs th - Gate-Source-Schwellenspannung:
0.9 V
Vgs - Gate-Source-Spannung:
10 V
Qg - Gate-Ladung:
5.8 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
114 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
CoolGaN
Verpackung:
Spule
Transistortyp:
1 N-Channel
Marke:
Infineon-Technologien
Abfallzeit:
13 ns
Produktart:
MOSFET
Anstiegszeit:
9 ns
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
15 ns
Typische Einschaltverzögerungszeit:
15 ns
Teil # Aliase:
SP001705420
Tags
IGL
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
CoolGaN™ Gallium Nitride HEMTs
Infineon CoolGaN™ Gallium Nitride HEMTs offer excellent advantages including ultimate efficiency, reliability, power density, and highest quality over silicon. CoolGaN transistors are built with the most reliable technology, designed for the highest efficiency and power density in switch mode power supplies. The devices work similar to conventional silicon MOSFETs with enhancement mode gate drive bias using a p-GaN gate structure.
Teil # Mfg. Beschreibung Aktie Preis
IGLD60R070D1AUMA1
DISTI # V72:2272_22710689		Infineon Technologies AGIGLD60R070D1AUMA12918
  • 1000:$15.1500
  • 500:$15.6300
  • 250:$16.1200
  • 100:$16.6000
  • 50:$17.3700
  • 25:$18.9300
  • 10:$19.1900
  • 1:$21.3500
IGLD60R070D1AUMA1
DISTI # IGLD60R070D1AUMA1TR-ND		Infineon Technologies AGIC GAN FET 600V 60A 8SON
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		On Order
  • 3000:$15.1523
IGLD60R070D1AUMA1
DISTI # IGLD60R070D1AUMA1CT-ND		Infineon Technologies AGIC GAN FET 600V 60A 8SON
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 500:$17.0033
  • 100:$18.7282
  • 10:$21.9320
  • 1:$23.7800
IGLD60R070D1AUMA1
DISTI # IGLD60R070D1AUMA1DKR-ND		Infineon Technologies AGIC GAN FET 600V 60A 8SON
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 500:$17.0033
  • 100:$18.7282
  • 10:$21.9320
  • 1:$23.7800
IGLD60R070D1AUMA1
DISTI # 32436883		Infineon Technologies AGIGLD60R070D1AUMA12918
  • 1000:$15.1500
  • 500:$15.6300
  • 250:$16.1200
  • 100:$16.6000
  • 50:$17.3700
  • 25:$18.9300
  • 10:$19.1900
  • 1:$21.3500
IGLD60R070D1AUMA1
DISTI # IGLD60R070D1AUMA1		Infineon Technologies AGGAN HV - Tape and Reel (Alt: IGLD60R070D1AUMA1)
RoHS: Compliant
Min Qty: 3000
Container: Reel		Americas - 0
    IGLD60R070D1AUMA1
    DISTI # SP001705420    		Infineon Technologies AGGAN HV (Alt: SP001705420)
    RoHS: Compliant
    Min Qty: 3000    		Europe - 0
    • 30000:€13.2900
    • 18000:€13.8900
    • 12000:€14.5900
    • 6000:€14.7900
    • 3000:€15.2900
    IGLD60R070D1AUMA1
    DISTI # 84AC1768    		Infineon Technologies AGMOSFET, N-CH, 600V, 15A, 150DEG C, 114W,Transistor Polarity:N Channel,Continuous Drain Current Id:15A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.055ohm,Rds(on) Test Voltage Vgs:-,Threshold Voltage Vgs:1.2V,Power RoHS Compliant: Yes167
    • 1000:$13.8200
    • 500:$15.8900
    • 250:$16.6900
    • 100:$17.4900
    • 50:$18.5300
    • 25:$19.5600
    • 10:$20.4800
    • 1:$22.2100
    IGLD60R070D1AUMA1
    DISTI # 726-IGLD60R070D1AUMA    		Infineon Technologies AGMOSFET 600V CoolGaN Power Transistor
    RoHS: Compliant    		158
    • 1:$21.9900
    • 5:$21.7600
    • 10:$20.2800
    • 25:$19.3700
    • 100:$17.3200
    • 250:$16.5200
    • 500:$15.7300
    • 1000:$13.6800
    IGLD60R070D1AUMA1
    DISTI # 2981535    		Infineon Technologies AGMOSFET, N-CH, 600V, 15A, 150DEG C, 114W
    RoHS: Compliant    		167
    • 3000:$22.8000
    • 500:$25.2600
    • 100:$26.1000
    • 50:$28.4700
    • 1:$31.3200
    • 10:$31.3200
    IGLD60R070D1AUMA1
    DISTI # 2981535    		Infineon Technologies AGMOSFET, N-CH, 600V, 15A, 150DEG C, 114W147
    • 100:£12.5600
    • 50:£13.3000
    • 10:£14.0400
    • 5:£15.7700
    • 1:£15.9400
    Bild Teil # Beschreibung
    STL3N65M2

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    OMO.#: OMO-STL3N65M2

    		 MOSFET N-channel 650 V, 1.6 Ohm typ., 2.3 A MDmesh M2 Power MOSFET in a PowerFLAT 3.3 x 3.3 HV package
    GS61004B-E01-MR

    Mfr.#: GS61004B-E01-MR

    OMO.#: OMO-GS61004B-E01-MR

    		 MOSFET 100V 45A E-Mode GaN
    GS66502B-E01-MR

    Mfr.#: GS66502B-E01-MR

    OMO.#: OMO-GS66502B-E01-MR

    		 MOSFET 650V Enhancement Mode Transistor
    LMG1020YFFT

    Mfr.#: LMG1020YFFT

    OMO.#: OMO-LMG1020YFFT

    		 Gate Drivers 5V, 7A/5A low side GaN driver with 60MHz/1ns speed 6-DSBGA -40 to 125
    CRD-5FF0912P

    Mfr.#: CRD-5FF0912P

    OMO.#: OMO-CRD-5FF0912P

    		 Power Management IC Development Tools Gate Driver Evaluation Board
    STL20N6F7

    Mfr.#: STL20N6F7

    OMO.#: OMO-STL20N6F7

    		 MOSFET N-channel 60 V, 0.0046 Ohm typ., 20 A STripFET F7 Power MOSFET in a PowerFLAT 3.3x3.3 package
    LMG1020YFFR

    Mfr.#: LMG1020YFFR

    OMO.#: OMO-LMG1020YFFR

    		 Gate Drivers 5V, 7A/5A low side GaN driver with 60MHz/1ns speed 6-DSBGA -40 to 125
    LMG1020YFFT

    Mfr.#: LMG1020YFFT

    OMO.#: OMO-LMG1020YFFT-TEXAS-INSTRUMENTS

    		 LMG1020YFFR BEARCAT 6-PIN WCSP
    GS66502B-E01-MR

    Mfr.#: GS66502B-E01-MR

    OMO.#: OMO-GS66502B-E01-MR-1190

    		 MOSFET 650V Enhancement Mode Transisto
    STL20N6F7

    Mfr.#: STL20N6F7

    OMO.#: OMO-STL20N6F7-STMICROELECTRONICS

    		 MOSFET N-CH 60V 100A
    Verfügbarkeit
    Aktie:
    149
    Auf Bestellung:
    2132
    Menge eingeben:
    Der aktuelle Preis von IGLD60R070D1AUMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    21,99 $
    21,99 $
    5
    21,76 $
    108,80 $
    10
    20,28 $
    202,80 $
    25
    19,37 $
    484,25 $
    100
    17,32 $
    1 732,00 $
    250
    16,52 $
    4 130,00 $
    500
    15,73 $
    7 865,00 $
    1000
    13,68 $
    13 680,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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