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SPA11N60CFD

SPA11N60CFD
Mfr. #:
SPA11N60CFD
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET N-Ch 600V 11A TO220FP CoolMOS CFD
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SPA11N60CFD Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-220FP-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
600 V
Id - Kontinuierlicher Drainstrom:
11 A
Rds On - Drain-Source-Widerstand:
440 mOhms
Vgs - Gate-Source-Spannung:
20 V
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
33 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
CoolMOS
Verpackung:
Rohr
Höhe:
16.15 mm
Länge:
10.65 mm
Serie:
CoolMOS-CFD
Transistortyp:
1 N-Channel
Breite:
4.85 mm
Marke:
Infineon-Technologien
Abfallzeit:
7 ns
Produktart:
MOSFET
Anstiegszeit:
18 ns
Werkspackungsmenge:
500
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
43 ns
Typische Einschaltverzögerungszeit:
34 ns
Teil # Aliase:
SP000216317 SPA11N60CFDXKSA1 SPA11N6CFDXK
Gewichtseinheit:
0.211644 oz
Tags
SPA11N60CF, SPA11N60C, SPA11N60, SPA11N6, SPA11N, SPA11, SPA1, SPA
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 600V 11A Automotive 3-Pin(3+Tab) TO-220FP Tube
***p One Stop Japan
Trans MOSFET N-CH 600V 11A 3-Pin(3+Tab) TO-220FP Tube
***et
Trans MOSFET N-CH 600V 11A 3-Pin(3+Tab) TO-220FP
***et Europe
Trans MOSFET N-CH 600V 11A 3-Pin TO-220FP Tube
***ark
Mosfet, N Channel, 600V, 11A, To-220-3
***i-Key
MOSFET N-CH 600V 11A TO220-3
***ment14 APAC
MOSFET, N, TO-220
***nell
MOSFET, N, TO-220; Biegunowość tranzystora:Kanał N; Prąd ciągły Id drenu:11A; Napięcie drenu / źródła Vds:600V; Rezystancja przewodzenia Rds(on):0.38ohm; Napięcie Vgs pomiaru Rds(on):10V; Napięcie progowe Vgs:4V; Straty mocy Pd:33W; Rodzaj obudowy tranzystora:TO-220; Liczba pinów:3piny/-ów; Temperatura robocza, maks.:150°C; Asortyment produktów:-; Kwalifikacja motoryzacyjna:-; Wskaźnik wrażliwości na wilgoć MSL:-; Substancje SVHC:No SVHC (27-Jun-2018); Maks. prąd Id:11A; Napięcie Vds, typ.:600V; Napięcie Vgs pomiaru Rds on:10V; Napięcie Vgs, maks.:20V; Rodzaj tranzystora:Mocy MOSFET; Temperatura robocza, min.:-55°C; Typ zakończenia:Przewlekane; Zakres temperatury roboczej:-55°C do +150°C
***ineon
CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. 600V CoolMOS CFD series combines the experience of the leading SJ MOSFET supplier with high class innovation. | Summary of Features: Fourth series of CoolMOS market entry in 2004; Fast Body Diode, Q rr 1/10th of C3 series, V th 4 V, g fs high, R g low; Specific for phase-shift ZVS and DC-AC power applications | Benefits: Improved efficiency; More efficient, more compact, lighter and cooler; Outstanding reliability with proven CoolMOS quality combined with high body diode ruggedness | Target Applications: Solar; Adapter; PC power; Consumer; Server; Telecom
Teil # Mfg. Beschreibung Aktie Preis
SPA11N60CFD
DISTI # 30577182		Infineon Technologies AGTrans MOSFET N-CH 600V 11A 3-Pin(3+Tab) TO-220FP
RoHS: Compliant		36
  • 10:$2.0655
  • 7:$3.9780
SPA11N60CFDXKSA1
DISTI # SPA11N60CFDXKSA1-ND		Infineon Technologies AGMOSFET N-CH 600V 11A TO220-3
RoHS: Compliant
Min Qty: 500
Container: Tube		Limited Supply - Call
  • 500:$2.1295
SPA11N60CFD
DISTI # C1S322000119556		Infineon Technologies AGTrans MOSFET N-CH 600V 11A 3-Pin(3+Tab) TO-220FP Tube
RoHS: Compliant		36
  • 10:$1.6200
  • 1:$3.1200
SPA11N60CFDXK
DISTI # SPA11N60CFDXKSA1		Infineon Technologies AGTrans MOSFET N-CH 600V 11A 3-Pin(3+Tab) TO-220FP - Rail/Tube (Alt: SPA11N60CFDXKSA1)
RoHS: Compliant
Min Qty: 500
Container: Tube		Americas - 0
  • 500:$1.5900
  • 1000:$1.5900
  • 2000:$1.4900
  • 3000:$1.4900
  • 5000:$1.3900
SPA11N60CFDXKSA1Infineon Technologies AGPower Field-Effect Transistor, 11A I(D), 600V, 0.44ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
RoHS: Compliant		9379
  • 1000:$1.7500
  • 500:$1.8400
  • 100:$1.9200
  • 25:$2.0000
  • 1:$2.1500
SPA11N60CFD
DISTI # 726-SPA11N60CFD		Infineon Technologies AGMOSFET N-Ch 600V 11A TO220FP CoolMOS CFD
RoHS: Compliant		368
  • 1:$2.7600
  • 10:$2.3500
  • 100:$2.0400
  • 250:$1.9300
SPA11N60CFDXKSA1
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    Verfügbarkeit
    Aktie:
    47
    Auf Bestellung:
    2030
    Menge eingeben:
    Der aktuelle Preis von SPA11N60CFD dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    2,76 $
    2,76 $
    10
    2,35 $
    23,50 $
    100
    2,04 $
    204,00 $
    250
    1,93 $
    482,50 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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