SI7629DNT1GE3

SI7629DNT1GE3
Mfr. #:
SI7629DNT1GE3
Hersteller:
Vishay Intertechnologies
Beschreibung:
Power Field-Effect Transistor, 35A I(D), 20V, 0.0046ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SI7629DNT1GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Tags
SI7629, SI762, SI76, SI7
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Teil # Mfg. Beschreibung Aktie Preis
SI7629DN-T1-GE3
DISTI # V72:2272_09215664
Vishay IntertechnologiesTrans MOSFET P-CH 20V 21.3A 8-Pin PowerPAK 1212 T/R
RoHS: Compliant
2723
  • 1000:$0.5107
  • 500:$0.6057
  • 250:$0.6756
  • 100:$0.7034
  • 25:$0.8144
  • 10:$0.9953
  • 1:$1.2078
SI7629DN-T1-GE3
DISTI # V36:1790_09215664
Vishay IntertechnologiesTrans MOSFET P-CH 20V 21.3A 8-Pin PowerPAK 1212 T/R
RoHS: Compliant
0
  • 3000000:$0.4363
  • 1500000:$0.4364
  • 300000:$0.4416
  • 30000:$0.4489
  • 3000:$0.4500
SI7629DN-T1-GE3
DISTI # SI7629DN-T1-GE3CT-ND
Vishay SiliconixMOSFET P-CH 20V 35A 1212-8 PPAK
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
11924In Stock
  • 1000:$0.5191
  • 500:$0.6576
  • 100:$0.7960
  • 10:$1.0210
  • 1:$1.1400
SI7629DN-T1-GE3
DISTI # SI7629DN-T1-GE3DKR-ND
Vishay SiliconixMOSFET P-CH 20V 35A 1212-8 PPAK
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
11924In Stock
  • 1000:$0.5191
  • 500:$0.6576
  • 100:$0.7960
  • 10:$1.0210
  • 1:$1.1400
SI7629DN-T1-GE3
DISTI # SI7629DN-T1-GE3TR-ND
Vishay SiliconixMOSFET P-CH 20V 35A 1212-8 PPAK
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
9000In Stock
  • 15000:$0.4301
  • 6000:$0.4469
  • 3000:$0.4704
SI7629DN-T1-GE3
DISTI # 31638531
Vishay IntertechnologiesTrans MOSFET P-CH 20V 21.3A 8-Pin PowerPAK 1212 T/R
RoHS: Compliant
2723
  • 16:$1.2078
SI7629DN-T1-GE3
DISTI # SI7629DN-T1-GE3
Vishay IntertechnologiesTrans MOSFET P-CH 20V 21.3A 8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SI7629DN-T1-GE3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel
Americas - 0
  • 30000:$0.2839
  • 18000:$0.2919
  • 12000:$0.3009
  • 6000:$0.3129
  • 3000:$0.3229
SI7629DN-T1-GE3
DISTI # 86R3929
Vishay IntertechnologiesP-CHANNEL 20-V (D-S) MOSFET0
  • 10000:$0.4070
  • 6000:$0.4160
  • 4000:$0.4320
  • 2000:$0.4800
  • 1000:$0.5280
  • 1:$0.5510
SI7629DN-T1-GE3.
DISTI # 30AC0202
Vishay IntertechnologiesTransistor Polarity:P Channel,Continuous Drain Current Id:21.3A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.0038ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-1.5V,Power Dissipation Pd:52W,No. of Pins:8Pins RoHS Compliant: No0
  • 10000:$0.4070
  • 6000:$0.4160
  • 4000:$0.4320
  • 2000:$0.4800
  • 1000:$0.5280
  • 1:$0.5510
SI7629DN-T1-GE3
DISTI # 781-SI7629DN-T1-GE3
Vishay IntertechnologiesMOSFET 20V 35A 52W
RoHS: Compliant
4468
  • 1:$1.1100
  • 10:$0.9210
  • 100:$0.7070
  • 500:$0.6080
  • 1000:$0.4790
  • 3000:$0.4470
  • 6000:$0.4250
  • 9000:$0.4090
SI7629DNT1GE3Vishay IntertechnologiesPower Field-Effect Transistor, 35A I(D), 20V, 0.0046ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
RoHS: Compliant
3000
    SI7629DN-T1-GE3Vishay IntertechnologiesMOSFET 20V 35A 52W
    RoHS: Compliant
    Americas -
      Bild Teil # Beschreibung
      SI7629DN-T1-GE3

      Mfr.#: SI7629DN-T1-GE3

      OMO.#: OMO-SI7629DN-T1-GE3

      MOSFET 20V 35A 52W
      SI7629DN-T1-GE3-CUT TAPE

      Mfr.#: SI7629DN-T1-GE3-CUT TAPE

      OMO.#: OMO-SI7629DN-T1-GE3-CUT-TAPE-1190

      Neu und Original
      SI7629DN-T1

      Mfr.#: SI7629DN-T1

      OMO.#: OMO-SI7629DN-T1-1190

      Neu und Original
      SI7629DN-T1-GE3

      Mfr.#: SI7629DN-T1-GE3

      OMO.#: OMO-SI7629DN-T1-GE3-VISHAY

      MOSFET P-CH 20V 35A 1212-8 PPAK
      SI7629DNT1GE3

      Mfr.#: SI7629DNT1GE3

      OMO.#: OMO-SI7629DNT1GE3-1190

      Power Field-Effect Transistor, 35A I(D), 20V, 0.0046ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      2000
      Menge eingeben:
      Der aktuelle Preis von SI7629DNT1GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
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