FCU600N65S3R0

FCU600N65S3R0
Mfr. #:
FCU600N65S3R0
Hersteller:
ON Semiconductor
Beschreibung:
SUPERFET3 650V IPAK PKG
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FCU600N65S3R0 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
FCU600N65S3R0 Mehr Informationen
Produkteigenschaft
Attributwert
Tags
FCU
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Semiconductor
N-Channel Power MOSFET, SUPERFET® III, Easy Drive, 650 V, 6 A, 600 mΩ, IPAK
***et
SUPERFET III Easy‐Drive MOSFET Single N‐Channel 650V 6A 600m Ohm 3-Pin IPAK Tube
***ical
Trans MOSFET N-CH 650V 6A 3-Pin(3+Tab) IPAK Tube
***Components
SUPERFET3 650V IPAK PKG
***ark
Mosfet, N-Ch, 650V, 6A, To-251; Transistor Polarity:n Channel; Continuous Drain Current Id:6A; Drain Source Voltage Vds:650V; On Resistance Rds(On):0.493Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4.5V; Power Dissipationrohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 650V, 6A, TO-251; Transistor Polarity:N Channel; Continuous Drain Current Id:6A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.493ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4.5V; Power Dissipation Pd:54W; Transistor Case Style:TO-251; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:SuperFET III Series; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (15-Jan-2018)
***nell
MOSFET, CA-N, 650V, 6A, TO-251; Polarità Transistor:Canale N; Corrente Continua di Drain Id:6A; Tensione Drain Source Vds:650V; Resistenza di Attivazione Rds(on):0.493ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:4.5V; Dissipazione di Potenza Pd:54W; Modello Case Transistor:TO-251; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:SuperFET III Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):-; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (15-Jan-2018)
SuperFET® III MOSFETs
ON Semiconductor SuperFET® III MOSFETs are high voltage (700V at TJ = 150ºC) super-junction (SJ) MOSFETs with charge balance technology. This technology provides outstanding low on-resistance (59mΩ or 62mΩ RDS(on) typical) and lower gate charge performance (78nC Qg typical). SuperFET III MOSFETs are designed to minimize conduction loss, offer superior switching performance, and withstand extreme rise rate of the drain-source voltage (dv/dt). Fairchild SuperFET III is ideal for various power systems for miniaturization and higher efficiency.
Teil # Mfg. Beschreibung Aktie Preis
FCU600N65S3R0
DISTI # V99:2348_21690178
ON SemiconductorN-Channel MOSFET1800
  • 2550:$0.4648
  • 525:$0.6388
  • 150:$0.7217
  • 75:$0.9187
  • 10:$1.0308
  • 1:$1.1986
FCU600N65S3R0
DISTI # V36:1790_21690178
ON SemiconductorN-Channel MOSFET0
  • 1800000:$0.3932
  • 900000:$0.3958
  • 180000:$0.6269
  • 18000:$1.0320
  • 1800:$1.1000
FCU600N65S3R0
DISTI # FCU600N65S3R0OS-ND
ON SemiconductorSUPERFET3 650V IPAK PKG
RoHS: Not compliant
Min Qty: 1
Container: Tube
1790In Stock
  • 5400:$0.4713
  • 3600:$0.4961
  • 1800:$0.5316
  • 100:$0.8151
  • 25:$0.9924
  • 10:$1.0450
  • 1:$1.1700
FCU600N65S3R0
DISTI # 31283977
ON SemiconductorN-Channel MOSFET10800
  • 1800:$1.1000
FCU600N65S3R0
DISTI # 31315867
ON SemiconductorN-Channel MOSFET1800
  • 14:$1.1986
FCU600N65S3R0
DISTI # FCU600N65S3R0
ON SemiconductorSUPERFET III Easy‐Drive MOSFET Single N‐Channel 650V 6A 600m Ohm 3-Pin IPAK Tube - Rail/Tube (Alt: FCU600N65S3R0)
RoHS: Compliant
Min Qty: 1800
Container: Tube
Americas - 0
  • 18000:$0.4159
  • 9000:$0.4269
  • 5400:$0.4319
  • 3600:$0.4379
  • 1800:$0.4409
FCU600N65S3R0
DISTI # 62AC6867
ON SemiconductorMOSFET, N-CH, 650V, 6A, TO-251,Transistor Polarity:N Channel,Continuous Drain Current Id:6A,Drain Source Voltage Vds:650V,On Resistance Rds(on):0.493ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4.5V,Power DissipationRoHS Compliant: Yes1795
  • 10000:$0.4360
  • 2500:$0.4520
  • 1000:$0.5110
  • 500:$0.6470
  • 100:$0.7320
  • 10:$0.9530
  • 1:$1.1100
FCU600N65S3R0
DISTI # 863-FCU600N65S3R0
ON SemiconductorMOSFET SUPERFET3 650V 6A 600 mOhm
RoHS: Compliant
1656
  • 1:$1.1000
  • 10:$0.9440
  • 100:$0.7250
  • 500:$0.6410
  • 1000:$0.5060
  • 2500:$0.4480
  • 10000:$0.4320
FCU600N65S3R0
DISTI # 2895718
ON SemiconductorMOSFET, N-CH, 650V, 6A, TO-251
RoHS: Compliant
1790
  • 5000:$0.7490
  • 1000:$0.7940
  • 500:$0.8590
  • 250:$1.0500
  • 100:$1.2800
  • 25:$1.8800
  • 5:$2.1900
FCU600N65S3R0
DISTI # 2895718
ON SemiconductorMOSFET, N-CH, 650V, 6A, TO-2511790
  • 500:£0.4650
  • 250:£0.4950
  • 100:£0.5250
  • 10:£0.7370
  • 1:£0.9110
Bild Teil # Beschreibung
FCU600N65S3R0

Mfr.#: FCU600N65S3R0

OMO.#: OMO-FCU600N65S3R0

MOSFET SUPERFET3 650V 6A 600 mOhm
FCU600N60Z

Mfr.#: FCU600N60Z

OMO.#: OMO-FCU600N60Z-1190

Neu und Original
FCU600N65S3R0

Mfr.#: FCU600N65S3R0

OMO.#: OMO-FCU600N65S3R0-ON-SEMICONDUCTOR

SUPERFET3 650V IPAK PKG
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
2000
Menge eingeben:
Der aktuelle Preis von FCU600N65S3R0 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
0,69 $
0,69 $
10
0,65 $
6,51 $
100
0,62 $
61,65 $
500
0,58 $
291,15 $
1000
0,55 $
548,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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