G7N60S3

G7N60S3
Mfr. #:
G7N60S3
Hersteller:
ON Semiconductor
Beschreibung:
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
G7N60S3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Tags
G7N6, G7N
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Teil # Mfg. Beschreibung Aktie Preis
HGTG7N60A4D
DISTI # HGTG7N60A4D-ND
ON SemiconductorIGBT 600V 34A 125W TO247
Min Qty: 450
Container: Tube
Limited Supply - Call
  • 450:$2.0895
HGTG7N60A4D
DISTI # HGTG7N60A4D
ON SemiconductorTrans IGBT Chip N-CH 600V 34A 3-Pin(3+Tab) TO-247 Rail - Bulk (Alt: HGTG7N60A4D)
RoHS: Not Compliant
Min Qty: 179
Container: Bulk
Americas - 0
    HGTG7N60A4D
    DISTI # HGTG7N60A4D
    ON SemiconductorTrans IGBT Chip N-CH 600V 34A 3-Pin(3+Tab) TO-247 Rail - Rail/Tube (Alt: HGTG7N60A4D)
    RoHS: Compliant
    Min Qty: 450
    Container: Tube
    Americas - 0
    • 4500:$1.5556
    • 2700:$1.5949
    • 1800:$1.6154
    • 900:$1.6364
    • 450:$1.6471
    HGTG7N60A4D
    DISTI # 58K1595
    ON SemiconductorSINGLE IGBT, 600V, 34A,DC Collector Current:34A,Collector Emitter Saturation Voltage Vce(on):1.9V,Power Dissipation Pd:125W,Collector Emitter Voltage V(br)ceo:600V,No. of Pins:3Pins,Operating Temperature Max:150°C,MSL:- RoHS Compliant: Yes
    RoHS: Compliant
    0
    • 5000:$1.3000
    • 2500:$1.3400
    • 1000:$1.6600
    • 500:$1.8400
    • 100:$1.9900
    • 10:$2.4800
    • 1:$2.9200
    HGTG7N60A4DFairchild Semiconductor CorporationInsulated Gate Bipolar Transistor, 34A I(C), 600V V(BR)CES, N-Channel, TO-247
    RoHS: Compliant
    52
    • 1000:$1.8400
    • 500:$1.9400
    • 100:$2.0200
    • 25:$2.1000
    • 1:$2.2600
    HGTG7N60A4DHarris Semiconductor75A, 600V, N-CHANNEL IGBT WITH ANTI-PARALLEL HYPERFAST DIODE
    RoHS: Compliant
    269
    • 1000:$1.8400
    • 500:$1.9400
    • 100:$2.0200
    • 25:$2.1000
    • 1:$2.2600
    G7N60A4DIntersil Corporation 550
      Bild Teil # Beschreibung
      G7N60A4D

      Mfr.#: G7N60A4D

      OMO.#: OMO-G7N60A4D-1190

      Neu und Original
      G7N60B3

      Mfr.#: G7N60B3

      OMO.#: OMO-G7N60B3-1190

      Neu und Original
      G7N60B3D

      Mfr.#: G7N60B3D

      OMO.#: OMO-G7N60B3D-1190

      Neu und Original
      G7N60C3

      Mfr.#: G7N60C3

      OMO.#: OMO-G7N60C3-1190

      Neu und Original
      G7N60C30

      Mfr.#: G7N60C30

      OMO.#: OMO-G7N60C30-1190

      Neu und Original
      G7N60C3D    G7N60C3D

      Mfr.#: G7N60C3D G7N60C3D

      OMO.#: OMO-G7N60C3D-G7N60C3D-1190

      Neu und Original
      G7N60C3D , MMBTA44L

      Mfr.#: G7N60C3D , MMBTA44L

      OMO.#: OMO-G7N60C3D-MMBTA44L-1190

      Neu und Original
      G7N60S3

      Mfr.#: G7N60S3

      OMO.#: OMO-G7N60S3-1190

      Neu und Original
      G7NA-30A181G

      Mfr.#: G7NA-30A181G

      OMO.#: OMO-G7NA-30A181G-1190

      Neu und Original
      G7NB-30E3P2(REV:B)

      Mfr.#: G7NB-30E3P2(REV:B)

      OMO.#: OMO-G7NB-30E3P2-REV-B--1190

      Neu und Original
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      1500
      Menge eingeben:
      Der aktuelle Preis von G7N60S3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
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