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SIHB12N65E-GE3

SIHB12N65E-GE3
Mfr. #:
SIHB12N65E-GE3
Hersteller:
Vishay / Siliconix
Beschreibung:
MOSFET 650V Vds 30V Vgs D2PAK (TO-263)
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SIHB12N65E-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIHB12N65E-GE3 Datasheet
ECAD Model:
Mehr Informationen:
SIHB12N65E-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Vishay
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-220FP-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
700 V
Id - Kontinuierlicher Drainstrom:
12 A
Rds On - Drain-Source-Widerstand:
380 mOhms
Vgs th - Gate-Source-Schwellenspannung:
4 V
Vgs - Gate-Source-Spannung:
30 V
Qg - Gate-Ladung:
35 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
156 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Schüttgut
Serie:
E
Marke:
Vishay / Siliconix
Abfallzeit:
18 ns
Produktart:
MOSFET
Anstiegszeit:
19 ns
Werkspackungsmenge:
1000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
35 ns
Typische Einschaltverzögerungszeit:
16 ns
Gewichtseinheit:
0.050717 oz
Tags
SIHB12N6, SIHB12N, SIHB12, SIHB1, SIHB, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
E Series N-Channel 650 V 380 mO 35 nC Surface Mount Power Mosfet - D2PAK
***ical
Trans MOSFET N-CH 650V 12A 3-Pin(2+Tab) D2PAK
***nell
MOSFET, N CH, 650V, 12A, TO-263-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 12A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.33ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: -; Powe
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
Teil # Mfg. Beschreibung Aktie Preis
SIHB12N65E-GE3
DISTI # V36:1790_09219044		Vishay IntertechnologiesTrans MOSFET N-CH 650V 12A 3-Pin(2+Tab) D2PAK
RoHS: Compliant		0
  • 1000000:$1.2910
  • 500000:$1.2950
  • 100000:$1.7320
  • 10000:$2.5750
  • 1000:$2.7200
SIHB12N65E-GE3
DISTI # SIHB12N65E-GE3-ND		Vishay SiliconixMOSFET N-CH 650V 12A D2PAK
Min Qty: 1
Container: Tube		3000In Stock
  • 5000:$1.2594
  • 2500:$1.2783
  • 1000:$1.3730
  • 500:$1.6571
  • 100:$2.0169
  • 10:$2.5090
  • 1:$2.7900
SIHB12N65E-GE3
DISTI # SIHB12N65E-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 650V 12A 3-Pin D2PAK - Tape and Reel (Alt: SIHB12N65E-GE3)
RoHS: Not Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 4000:$1.1900
  • 6000:$1.1900
  • 10000:$1.1900
  • 1000:$1.2900
  • 2000:$1.2900
SIHB12N65E-GE3
DISTI # SIHB12N65E-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 650V 12A 3-Pin D2PAK (Alt: SIHB12N65E-GE3)
Min Qty: 1		Europe - 0
    SIHB12N65E-GE3
    DISTI # 99W9446    		Vishay IntertechnologiesN-CHANNEL 650V
    RoHS: Not Compliant    		0
    • 1000:$1.6300
    • 500:$1.7400
    • 250:$1.8700
    • 100:$2.0400
    • 1:$2.4900
    SIHB12N65E-GE3
    DISTI # 78-SIHB12N65E-GE3    		Vishay IntertechnologiesMOSFET 650V Vds 30V Vgs D2PAK (TO-263)
    RoHS: Compliant    		2000
    • 1:$2.7900
    • 10:$2.3600
    • 100:$1.9400
    • 500:$1.8100
    • 1000:$1.3700
    • 2000:$1.2700
    • 5000:$1.2500
    SIHB12N65E-GE3Vishay IntertechnologiesMOSFET 650V Vds 30V Vgs D2PAK (TO-263)
    RoHS: Compliant    		Americas -
      SIHB12N65E-GE3
      DISTI # 2400357      		Vishay IntertechnologiesMOSFET, N CH, 650V, 12A, TO-263-3
      RoHS: Compliant      		289
      • 5000:$1.9400
      • 3000:$2.0100
      • 1000:$2.1600
      • 100:$3.1700
      • 25:$3.7200
      • 10:$3.9500
      • 1:$4.3800
      SIHB12N65E-GE3
      DISTI # 2400357      		Vishay IntertechnologiesMOSFET, N CH, 650V, 12A, TO-263-3
      RoHS: Compliant      		289
      • 1000:£1.0400
      • 500:£1.3500
      • 250:£1.4400
      • 100:£1.5400
      • 10:£1.9900
      • 1:£2.7200
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      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      1985
      Menge eingeben:
      Der aktuelle Preis von SIHB12N65E-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      2,94 $
      2,94 $
      10
      2,44 $
      24,40 $
      100
      1,89 $
      189,00 $
      500
      1,65 $
      825,00 $
      1000
      1,37 $
      1 370,00 $
      2000
      1,27 $
      2 540,00 $
      5000
      1,23 $
      6 150,00 $
      10000
      1,18 $
      11 800,00 $
      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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