STGD6NC60HDT4

Mfr. #:: STGD6NC60HDT4
Hersteller:: STMicroelectronics
Beschreibung:: IGBT Transistors PowerMESH&#34 IGBT
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: STGD6NC60HDT4 Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: STGD6NC60HDT4 Datasheet STGD6NC60HDT4 Datasheet (P4-P6)STGD6NC60HDT4 Datasheet (P7-P9)STGD6NC60HDT4 Datasheet (P10-P12)STGD6NC60HDT4 Datasheet (P13-P15)
ECAD Model:
Mehr Informationen:: STGD6NC60HDT4 Mehr Informationen STGD6NC60HDT4 Product Details

Produkteigenschaft
Attributwert

Hersteller:: STMicroelectronics

Produktkategorie:: IGBT-Transistoren

RoHS:: Y

Technologie:: Si

Paket / Koffer:: DPAK-3

Montageart:: SMD/SMT

Aufbau:: Single

Kollektor- Emitterspannung VCEO Max:: 600 V

Kollektor-Emitter-Sättigungsspannung:: 1.9 V

Maximale Gate-Emitter-Spannung:: 20 V

Pd - Verlustleistung:: 50 W

Minimale Betriebstemperatur:: - 55 C

Maximale Betriebstemperatur:: + 150 C

Serie:: STGD6NC60HDT4

Verpackung:: Spule

Kontinuierlicher Kollektorstrom Ic Max:: 15 A

Höhe:: 2.4 mm

Länge:: 6.6 mm

Breite:: 6.2 mm

Marke:: STMicroelectronics

Kontinuierlicher Kollektorstrom:: 6 A

Gate-Emitter-Leckstrom:: 100 nA

Produktart:: IGBT-Transistoren

Werkspackungsmenge:: 2500

Unterkategorie:: IGBTs

Gewichtseinheit:: 0.012346 oz

Tags: STGD6NC60HD, STGD6NC60H, STGD6NC60, STGD6NC, STGD6N, STGD6, STGD, STG

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

STGD6NC60HDT4 Beschreibung

***ical: Trans IGBT Chip N-CH 600V 15A 56000mW 3-Pin(2+Tab) DPAK T/R

***icroelectronics: N-channel 600 V, 7 A very fast IGBT

***roFlash: Insulated Gate Bipolar Transistor, 15A I(C), 600V V(BR)CES, N-Channel, TO-252AA

***ser: IGBTs Insulated Gate Bipolar Transistor PowerMESH" IGBT

***icroelectronics SCT: Short-circuit rugged IGBT, DPAK, Tape and Reel

***ment14 APAC: IGBT, SINGLE, 600V, 15A, TO-252-3

*** Electronic Components: IGBT Transistors PowerMESH" IGBT

***ponent Stockers USA: 15 A 600 V N-CHANNEL IGBT TO-252AA

*** Stop Electro: Insulated Gate Bipolar Transistors

***nell: IGBT, SINGLE, 600V, 15A, TO-252-3; DC Collector Current: 15A; Collector Emitter Saturation Voltage Vce(on): 1.9V; Power Dissipation Pd: 56W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: PowerMESH Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018)

***ical: Trans IGBT Chip N-CH 600V 15A 62000mW 3-Pin(2+Tab) DPAK T/R

***icroelectronics: New short circuit rugged "K" series

***r Electronics: Insulated Gate Bipolar Transistor, 15A I(C), 600V V(BR)CES, N-Channel

***ser: Power MOSFET Transistors N Ch 55V 6.5mohm 80A Pwr MOSFET

***nell: IGBT, SINGLE, 600V, 15A, TO-252; DC Collector Current: 15A; Collector Emitter Saturation Voltage Vce(on): 2.2V; Power Dissipation Pd: 62W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: PowerMESH Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018)

***ical: Trans IGBT Chip N-CH 600V 16A 56000mW 3-Pin(2+Tab) DPAK T/R

*** Electronics: ON SEMICONDUCTOR NGTB05N60R2DT4G IGBT Single Transistor, 16 A, 1.65 V, 56 W, 600 V, TO-252, 3 Pins

*** Stop Electro: Insulated Gate Bipolar Transistor, 16A I(C), 600V V(BR)CES, N-Channel

***ment14 APAC: IGBT, SINGLE, 600V, 16A, TO-252-3

***nell: IGBT, SINGLE, 600V, 16A, TO-252-3; DC Collector Current: 16A; Collector Emitter Saturation Voltage Vce(on): 1.65V; Power Dissipation Pd: 56W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)

***ical: Trans IGBT Chip N-CH 600V 20A 62000mW 3-Pin(2+Tab) DPAK T/R

***icroelectronics: 10 A, 600 V short-circuit rugged IGBT

***SIT Distribution GmbH: Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel

*** Electronic Components: IGBT Transistors N Ch 600V 10A

***ark: Ptd High Voltage Rohs Compliant: Yes

***nell: IGBT, D-PAK; DC Collector Current: 20A; Collector Emitter Saturation Voltage Vce(on): 2V; Power Dissipation Pd: 60W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temper

***ical: Trans IGBT Chip N-CH 600V 20A 72000mW 3-Pin(2+Tab) DPAK T/R

*** Electronics: ON SEMICONDUCTOR NGTB10N60R2DT4G IGBT Single Transistor, 20 A, 1.7 V, 72 W, 600 V, TO-252, 3 Pins

***r Electronics: Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel

***ment14 APAC: IGBT, SINGLE, 600V, 20A, TO-252-3

***nell: IGBT, SINGLE, 600V, 20A, TO-252-3; DC Collector Current: 20A; Collector Emitter Saturation Voltage Vce(on): 1.7V; Power Dissipation Pd: 72W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)

***ical: Trans IGBT Chip N-CH 600V 9A 49000mW 3-Pin(2+Tab) DPAK T/R

***el Electronic: ON SEMICONDUCTOR NGTB03N60R2DT4G IGBT Single Transistor, 9 A, 1.7 V, 49 W, 600 V, TO-252, 3 Pins

***r Electronics: Insulated Gate Bipolar Transistor, 9A I(C), 600V V(BR)CES, N-Channel

***ment14 APAC: IGBT, SINGLE, 600V, 9A, TO-252-3

***nell: IGBT, SINGLE, 600V, 9A, TO-252-3; DC Collector Current: 9A; Collector Emitter Saturation Voltage Vce(on): 1.7V; Power Dissipation Pd: 49W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)

***ical: Trans IGBT Chip N-CH 600V 7.5A 38000mW 3-Pin(2+Tab) DPAK T/R

***icroelectronics: 4.5 A, 600 V very fast IGBT with Ultrafast diode

***ment14 APAC: 3/4.5 A, 600 V VERY FAST IGBT; DC Collector Current:7.5A; Emitter Saturation Voltage Vce(on):2.45V; Power Dissipation Pd:38W;

***nell: IGBT, W DIODE, 600V, 7.5A, 38W, DPAK; Transistor Type:IGBT; DC Collector Current:7.5A; Collector Emitter Voltage Vces:600V; Power Dissipation Pd:38W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-252; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Power Dissipation Pd:38W

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
STGD6NC60HDT4 DISTI # V36:1790_06560629	STMicroelectronics	Trans IGBT Chip N-CH 600V 15A 3-Pin(2+Tab) DPAK T/R RoHS: Compliant	20000	25000:$0.4659 10000:$0.4790 2500:$0.4963
STGD6NC60HDT4 DISTI # 497-5112-1-ND	STMicroelectronics	IGBT 600V 15A 56W DPAK RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	2496In Stock	1000:$0.6999 500:$0.8665 100:$1.0330 10:$1.3030 1:$1.4500
STGD6NC60HDT4 DISTI # 497-5112-6-ND	STMicroelectronics	IGBT 600V 15A 56W DPAK RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	2496In Stock	1000:$0.6999 500:$0.8665 100:$1.0330 10:$1.3030 1:$1.4500
STGD6NC60HDT4 DISTI # 497-5112-2-ND	STMicroelectronics	IGBT 600V 15A 56W DPAK RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	Temporarily Out of Stock	5000:$0.6121 2500:$0.6391
STGD6NC60HDT4 DISTI # 30529885	STMicroelectronics	Trans IGBT Chip N-CH 600V 15A 3-Pin(2+Tab) DPAK T/R RoHS: Compliant	20000	10000:$0.4790 2500:$0.4963
STGD6NC60HDT4 DISTI # 31038096	STMicroelectronics	Trans IGBT Chip N-CH 600V 15A 3-Pin(2+Tab) DPAK T/R RoHS: Compliant	2500	2500:$0.4466
STGD6NC60HDT4 DISTI # STGD6NC60HDT4	STMicroelectronics	Trans IGBT Chip N-CH 600V 15A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: STGD6NC60HDT4) RoHS: Compliant Min Qty: 2500 Container: Reel	Americas - 0	2500:$0.5769 5000:$0.5499 10000:$0.5249 15000:$0.5009 25000:$0.4909
STGD6NC60HDT4 DISTI # STGD6NC60HDT4	STMicroelectronics	Trans IGBT Chip N-CH 600V 15A 3-Pin(2+Tab) DPAK T/R (Alt: STGD6NC60HDT4) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Europe - 0	2500:€0.6149 5000:€0.5029 10000:€0.4609 15000:€0.4259 25000:€0.3949
STGD6NC60HDT4 DISTI # 51AC9543	STMicroelectronics	IGBT, SINGLE, 600V, 15A, TO-252-3,DC Collector Current:15A,Collector Emitter Saturation Voltage Vce(on):1.9V,Power Dissipation Pd:56W,Collector Emitter Voltage V(br)ceo:600V,Transistor Case Style:TO-252,No. of Pins:3Pins,, RoHS Compliant: Yes	1725	1:$1.0200 10:$0.8760 25:$0.7890 50:$0.7160 100:$0.6010 250:$0.5310 500:$0.4620 1000:$0.4430
STGD6NC60HDT4	STMicroelectronics	STGD6NC60HD Series N-Channel 600 V 7 A Very Fast PowerMESH IGBT - TO-252 RoHS: Compliant	45000Reel	2500:$0.7700
STGD6NC60HDT4 DISTI # 511-STGD6NC60HDT4	STMicroelectronics	IGBT Transistors PowerMESH&#34 IGBT RoHS: Compliant	2518	1:$1.2700 10:$1.0800 100:$0.8280 500:$0.7320 1000:$0.5780 2500:$0.5130 10000:$0.4930
STGD6NC60HDT4	STMicroelectronics		300	4:$1.3125 17:$0.8531 60:$0.4922 205:$0.4200
STGD6NC60HDT4	STMicroelectronics		240	70:$0.5250 15:$0.8750 1:$1.7500
STGD6NC60HDT4 DISTI # STGD6NC60HD	STMicroelectronics	600V 15A 56W TO252 RoHS: Compliant	2490	10:€0.8700 50:€0.5700 200:€0.4200 500:€0.4000
STGD6NC60HDT4 DISTI # TMOSP7949	STMicroelectronics	IGBT600V15A1,9VTO252-3 RoHS: Compliant	Stock DE - 0Stock US - 0	2500:$0.5531 5000:$0.5191 7500:$0.5021 10000:$0.4638
STGD6NC60HDT4 DISTI # 2849653	STMicroelectronics	IGBT, SINGLE, 600V, 15A, TO-252-3 RoHS: Compliant	1725	5:$1.5900 25:$1.3600 100:$1.0300
STGD6NC60HDT4 DISTI # 2849653	STMicroelectronics	IGBT, SINGLE, 600V, 15A, TO-252-3 RoHS: Compliant	1755	5:£1.0300 25:£0.9330 100:£0.7270 250:£0.6640 500:£0.6010
STGD6NC60HDT4 DISTI # C1S730200520779	STMicroelectronics	Trans IGBT Chip N-CH 600V 15A 56000mW 3-Pin(2+Tab) DPAK T/R RoHS: Compliant	20000	10000:$0.4790 2500:$0.4963
STGD6NC60HDT4 DISTI # C1S730200483247	STMicroelectronics	Trans IGBT Chip N-CH 600V 15A 56000mW 3-Pin(2+Tab) DPAK T/R RoHS: Compliant	2500	2500:$0.5460
STGD6NC60HDT4 DISTI # XSFP00000104632	STMicroelectronics	Insulated GateBipolarTransistor,15AI(C),600VV(BR)CES,N-Channel,TO-252AA RoHS: Compliant	30285	2500:$1.5400 30285:$1.4000

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Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 1985
Menge eingeben:

Der aktuelle Preis von STGD6NC60HDT4 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~1,26 $~~; ~~1,26 $~~

10: ~~1,07 $~~; ~~10,70 $~~

100: ~~0,83 $~~; ~~82,80 $~~

500: ~~0,73 $~~; ~~366,00 $~~

1000: ~~0,58 $~~; ~~578,00 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

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STGD6NC60HDT4

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes