BSB056N10NN3 G

BSB056N10NN3 G
Mfr. #:
BSB056N10NN3 G
Hersteller:
Infineon Technologies
Beschreibung:
Trans MOSFET N-CH 100V 9A 7-Pin WDSON
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
BSB056N10NN3 G Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
Infineon-Technologien
Produktkategorie
Transistoren - FETs, MOSFETs - Single
Serie
OptiMOS 3
Verpackung
Spule
Teil-Aliasnamen
BSB056N10NN3GXT BSB056N10NN3GXUMA1 SP000604540
Handelsname
OptiMOS
Paket-Koffer
WDSON-2
Technologie
Si
Anzahl der Kanäle
1 Channel
Transistor-Typ
1 N-Channel
ID-Dauer-Drain-Strom
83 A
Vds-Drain-Source-Breakdown-Voltage
100 V
Rds-On-Drain-Source-Widerstand
5.6 mOhms
Transistor-Polarität
N-Kanal
Tags
BSB056, BSB05, BSB0, BSB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Teil # Mfg. Beschreibung Aktie Preis
BSB056N10NN3 G
DISTI # C1S322000455023
Infineon Technologies AGTrans MOSFET N-CH 100V 9A 7-Pin WDSON
RoHS: Compliant
12
  • 50:$1.1200
BSB056N10NN3GXUMA1
DISTI # BSB056N10NN3GXUMA1CT-ND
Infineon Technologies AGMOSFET N-CH 100V 9A WDSON-2
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
24055In Stock
  • 1000:$1.7588
  • 500:$2.0854
  • 100:$2.5753
  • 10:$3.1410
  • 1:$3.5200
BSB056N10NN3GXUMA1
DISTI # BSB056N10NN3GXUMA1DKR-ND
Infineon Technologies AGMOSFET N-CH 100V 9A WDSON-2
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
24055In Stock
  • 1000:$1.7588
  • 500:$2.0854
  • 100:$2.5753
  • 10:$3.1410
  • 1:$3.5200
BSB056N10NN3GXUMA1
DISTI # BSB056N10NN3GXUMA1TR-ND
Infineon Technologies AGMOSFET N-CH 100V 9A WDSON-2
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)
10000In Stock
  • 5000:$1.5612
BSB056N10NN3G
DISTI # SP000604540
Infineon Technologies AGTrans MOSFET N-CH 100V 9A 7-Pin WDSON-2 T/R (Alt: SP000604540)
RoHS: Compliant
Min Qty: 5000
Container: Tape and Reel
Europe - 0
  • 5000:€2.2900
  • 10000:€1.7900
  • 20000:€1.4900
  • 30000:€1.3900
  • 50000:€1.2900
BSB056N10NN3GXUMA1
DISTI # BSB056N10NN3GXUMA1
Infineon Technologies AGTrans MOSFET N-CH 100V 9A 7-Pin WDSON-2 T/R - Tape and Reel (Alt: BSB056N10NN3GXUMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel
Americas - 0
  • 5000:$1.4900
  • 5002:$1.4900
  • 10002:$1.3900
  • 25000:$1.3900
  • 50000:$1.3900
BSB056N10NN3GXUMA1
DISTI # SP000604540
Infineon Technologies AGTrans MOSFET N-CH 100V 9A 7-Pin WDSON-2 T/R (Alt: SP000604540)
RoHS: Compliant
Min Qty: 5000
Container: Tape and Reel
Europe - 0
  • 5000:€1.7900
  • 10000:€1.4900
  • 20000:€1.2900
  • 30000:€1.1900
  • 50000:€1.1900
BSB056N10NN3GXUMA1
DISTI # 47Y7989
Infineon Technologies AGMOSFET Transistor, N Channel, 83 A, 100 V, 0.005 ohm, 10 V, 2.7 V RoHS Compliant: Yes0
    BSB056N10NN3 G
    DISTI # 726-BSB056N10NN3G
    Infineon Technologies AGMOSFET N-Ch 100V 83A CanPAK3 MN OptiMOS 3
    RoHS: Compliant
    8622
    • 1:$2.9400
    • 10:$2.5000
    • 100:$2.1700
    • 250:$2.0600
    • 500:$1.8500
    • 1000:$1.5600
    • 2500:$1.4800
    • 5000:$1.4200
    BSB056N10NN3 G E8182
    DISTI # N/A
    Infineon Technologies AGMOSFET0
      BSB056N10NN3GInfineon Technologies AGPower Field-Effect Transistor, 9A I(D), 100V, 0.0056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
      RoHS: Compliant
      4793
      • 1000:$1.5000
      • 500:$1.5800
      • 100:$1.6400
      • 25:$1.7100
      • 1:$1.8500
      BSB056N10NN3GXUMA1
      DISTI # 9064393P
      Infineon Technologies AGMOSFET N-CHANNEL 100V 9A OPTIMOS WDSON, RL5
      • 50:£1.7240
      • 100:£1.4900
      Bild Teil # Beschreibung
      BSB056N10NN3 G

      Mfr.#: BSB056N10NN3 G

      OMO.#: OMO-BSB056N10NN3-G

      MOSFET N-Ch 100V 83A CanPAK3 MN OptiMOS 3
      BSB056N10NN3GXUMA1

      Mfr.#: BSB056N10NN3GXUMA1

      OMO.#: OMO-BSB056N10NN3GXUMA1

      MOSFET MV POWER MOS
      BSB056N10NN3 G

      Mfr.#: BSB056N10NN3 G

      OMO.#: OMO-BSB056N10NN3-G-1190

      Trans MOSFET N-CH 100V 9A 7-Pin WDSON
      BSB056N10NN3G

      Mfr.#: BSB056N10NN3G

      OMO.#: OMO-BSB056N10NN3G-1190

      Trans MOSFET N-CH 100V 9A 7-Pin WDSON-2 T/R (Alt: SP000604540)
      BSB056N10NN3GXUMA1

      Mfr.#: BSB056N10NN3GXUMA1

      OMO.#: OMO-BSB056N10NN3GXUMA1-INFINEON-TECHNOLOGIES

      MOSFET N-CH 100V 9A WDSON-2
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      2500
      Menge eingeben:
      Der aktuelle Preis von BSB056N10NN3 G dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      1,68 $
      1,68 $
      10
      1,60 $
      15,96 $
      100
      1,51 $
      151,20 $
      500
      1,43 $
      714,00 $
      1000
      1,34 $
      1 344,00 $
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