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STP38N65M5

STP38N65M5
Mfr. #:
STP38N65M5
Hersteller:
STMicroelectronics
Beschreibung:
MOSFET N-Ch 650V 0.076 Ohm 30 A MDmesh M5
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
STP38N65M5 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
STP38N65M5 Mehr Informationen STP38N65M5 Product Details
Produkteigenschaft
Attributwert
Hersteller:
STMicroelectronics
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-220-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
650 V
Id - Kontinuierlicher Drainstrom:
30 A
Rds On - Drain-Source-Widerstand:
95 mOhms
Vgs th - Gate-Source-Schwellenspannung:
3 V
Vgs - Gate-Source-Spannung:
25 V
Qg - Gate-Ladung:
71 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
190 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
MDmesh
Verpackung:
Rohr
Serie:
STP38N65M5
Marke:
STMicroelectronics
Abfallzeit:
9 ns
Produktart:
MOSFET
Anstiegszeit:
9 ns
Werkspackungsmenge:
1000
Unterkategorie:
MOSFETs
Gewichtseinheit:
0.011640 oz
Tags
STP38N, STP38, STP3, STP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***icroelectronics
N-channel 650 V, 0.073 Ohm typ., 30 A MDmesh m5 Power MOSFET in TO-220 package
***ure Electronics
N-Channel 650 V 95 mOhm Flange Mount MDmesh™ V Power Mosfet - TO-220
***ical
Trans MOSFET N-CH 650V 30A 3-Pin(3+Tab) TO-220AB Tube
***nell
MOSFET, N-CH, 650V, 30A, TO-220AB; Transistor Polarity: N Channel; Continuous Drain Current Id: 30A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.073ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Po
***r Electronics
Power Field-Effect Transistor, 30A I(D), 650V, 0.095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***icroelectronics
N-channel 650 V, 0.067 Ohm, 35 A MDmesh M5 Power MOSFET in TO-220 package
***ark
Power Mosfet, N Channel, 35 A, 650 V, 0.067 Ohm, 10 V, 4 V Rohs Compliant: Yes
***ical
Trans MOSFET N-CH 650V 35A 3-Pin(3+Tab) TO-220AB Tube
***nell
MOSFET, N CH, 650V, 35A, TO220; Transistor Polarity: N Channel; Continuous Drain Current Id: 35A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.067ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power
***r Electronics
Power Field-Effect Transistor, 35A I(D), 650V, 0.078ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***icroelectronics
N-channel 550 V, 0.06 Ohm typ., 33 A MDmesh M5 Power MOSFET in TO-220 package
***ical
Trans MOSFET N-CH 550V 33A 3-Pin(3+Tab) TO-220AB Tube
***ure Electronics
Single N-Channel 600 V 190 W 62 nC Silicon Through Hole Mosfet - TO-220-3
***r Electronics
Power Field-Effect Transistor, 33A I(D), 550V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ark
MOSFET, N-CH, 550V, 33A, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:550V; Continuous Drain Current Id:33A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
***icroelectronics
N-channel 650 V, 0.070 Ohm, 33 A MDmesh(TM) V Power MOSFET in TO-220
***ure Electronics
STP42N65M5 Series N-Channel 650 V 79 mOhm MDmesh™ V Power MosFet - TO-220
***ical
Trans MOSFET N-CH Si 650V 33A 3-Pin(3+Tab) TO-220AB Tube
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 33A I(D), 650V, 0.079ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ark
N CH POWER MOSFET, MDmesh, 710V, 33A, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:33A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
*** Electronic Components
MOSFET 650V CoolMOS CFD2 is Infineon's second generation of market leading high voltage CoolMOS
*** Stop Electro
Power Field-Effect Transistor, 31.2A I(D), 650V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ineon SCT
Replacement for 650V CoolMOS™ CFD2 is 600V CoolMOS™ CFD7, PG-TO220-3, RoHS
***el Electronic
Ceramic Capacitors 82pF 0603 (1608 Metric) ±1% C0G NP0 Tape & Reel (TR) 1 (Unlimited) General Purpose Surface Mount, MLCC -55°C~125°C Cap Ceramic 82pF 50V C0G 1% SMD 0603 125°C Paper T/R
***ark
MOSFET, N-CH, 650V, 31.2A, 277.8W; Channel Type:N Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:31.2A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
***ineon
650V CoolMOS CFD2 is Infineon's second generation of market leading high voltage CoolMOS MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation behavior and therefore better EMI behavior gives this product a clear advantage in comparison with competitor parts. | Summary of Features: 650V technology with integrated fast body diode; Limited voltage overshoot during hard commutation; Significant Q g reduction compared to 600V CFD technology; Tighter R DS(ON) max to R DS(on) typ window; Easy to design-in; Lower price compared to 600V CFD technology | Benefits: Low switching losses due to low Q rr at repetitive commutation on body diode; Self limiting di/dt and dv/dt; Low Q oss; Reduced turn on and turn of delay times; Outstanding CoolMOS quality | Target Applications: Telecom; Server; Solar; HID lamp ballast; LED lighting; eMobility
***ical
Trans MOSFET N-CH 650V 24A 3-Pin(3+Tab) TO-220
***ark
MOSFET, N-CH, 650V, 24A, 150DEG C, 128W; Channel Type:N Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:24A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.5V RoHS Compliant: Yes
*** Stop Electro
Power Field-Effect Transistor, 24A I(D), 650V, 0.095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ineon SCT
Infineon’s CoolMOS™ C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worlds’s lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range, PG-TO220-3, RoHS
***ineon
Infineons new CoolMOS C7 series is a revolutionary step forward in technology, providing the worldss lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. | Summary of Features: 650V voltage; Revolutionary best-in-class R DS(on)/package; Reduced energy stored in output capacitance (Eoss); Lower gate charge Qg; Space saving through use of smaller packages or reduction of parts; 12 years manufacturing experience in superjunction technology | Benefits: Improved safety margin and suitable for both SMPS and solar inverter applications; Lowest conduction losses/package; Low switching losses; Better light load efficiency; Increasing power density; Outstanding CoolMOS quality | Target Applications: Telecom; Server; Solar; PC power
***ical
Trans MOSFET N-CH 650V 31.2A Automotive 3-Pin(3+Tab) TO-220 Tube
***ark
MOSFET, AEC-Q101, N-CH, 650V, TO-220-3; Transistor Polarity:N Channel; Continuous Drain Current Id:31.2A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.099ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power RoHS Compliant: Yes
*** Stop Electro
Power Field-Effect Transistor, 31.2A I(D), 650V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ineon SCT
650V CoolMOS™ CFDA Superjunction (SJ) MOSFET is Infineon's second generation of market leading automotive qualified high voltage CoolMOS™ power MOSFETs, PG-TO220-3, RoHS
***ineon
650V CoolMOS CFDA is Infineon's second generation of market leading automotive qualified high voltage CoolMOS MOSFET. In addition to the well-known attributes of high quality and reliability required by the automotive industry, the new CoolMOS CFDA series provides now also an integrated fast body diode. | Summary of Features: First 650V automotive qualified technology with integrated fast body diode on the market; Limited voltage overshoot during hard commutation self limiting di/dt and dv/dt; Low gate charge value Q g; Low Q rr at repetitive commutation on body diode & lowQ oss; Reduced turn on and turn of delay times; Compliant to AEC Q101 standard | Benefits: Increased safety margin due to higher breakdown voltage; Reduced EMI appearance and easy to design in; Better light load efficiency; Lower switching losses; Higher switching frequency and/or higher duty cycle possible; High quality and reliability | Target Applications: Unidirectional and bidirectional DC-DC converter; Battery charger; HID lighting
Standard Products
STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discrete and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of design aids, including SPICE, IBIS models and simulation tools, are available to make adding to a design-in easy.
N-channel MDmesh V Power MOSFET
STMicroelectronics 550 and 650V MDmesh M5 series of super-junction Power MOSFETs offer outstanding RDS(on) values to significantly reduce losses in line-voltage PFC circuits and power supplies. This in turn enables new generations of electronic products offering greater energy savings, superior power density, and more compact applications. This new technology will help product designers tackle emerging challenges such as the high-efficiency targets of new eco-design directives, and will also benefit the renewable energy sector by saving vital watts normally lost in power-control modules. 
STM MDmeshV Power MOSFETs - Thru-Hole
Teil # Mfg. Beschreibung Aktie Preis
STP38N65M5
DISTI # 30993128		STMicroelectronicsTrans MOSFET N-CH 650V 30A 3-Pin(3+Tab) TO-220 Tube
RoHS: Compliant		1000
  • 3:$8.8000
STP38N65M5
DISTI # 497-13112-5-ND		STMicroelectronicsMOSFET N-CH 650V 30A TO-220
RoHS: Compliant
Min Qty: 1000
Container: Tube		Temporarily Out of Stock
  • 1000:$4.5190
STP38N65M5
DISTI # C1S730200703813		STMicroelectronicsTrans MOSFET N-CH 650V 30A 3-Pin(3+Tab) TO-220 Tube
RoHS: Compliant		1000
  • 1000:$4.7200
  • 500:$5.0500
  • 100:$5.7100
  • 50:$5.7700
  • 10:$6.3400
  • 1:$7.0400
STP38N65M5
DISTI # V36:1790_06564716		STMicroelectronicsTrans MOSFET N-CH 650V 30A 3-Pin(3+Tab) TO-220 Tube
RoHS: Compliant		0
  • 1000:$3.7140
STP38N65M5
DISTI # STP38N65M5		STMicroelectronicsTrans MOSFET N-CH 650V 30A 3-Pin(3+Tab) TO-220 Tube (Alt: STP38N65M5)
RoHS: Compliant
Min Qty: 1
Container: Tube		Europe - 300
  • 1000:€1.9900
  • 500:€2.0900
  • 100:€2.1900
  • 50:€2.2900
  • 25:€2.3900
  • 10:€2.4900
  • 1:€2.6900
STP38N65M5
DISTI # STP38N65M5		STMicroelectronicsTrans MOSFET N-CH 650V 30A 3-Pin(3+Tab) TO-220 Tube - Rail/Tube (Alt: STP38N65M5)
RoHS: Compliant
Min Qty: 1000
Container: Tube		Americas - 0
  • 10000:$3.9900
  • 6000:$4.0900
  • 4000:$4.2900
  • 2000:$4.4900
  • 1000:$4.6900
STP38N65M5
DISTI # 45AC7721		STMicroelectronicsTrans MOSFET N-CH 650V 30A 3-Pin(3+Tab) TO-220 Tube - Bulk (Alt: 45AC7721)
RoHS: Compliant
Min Qty: 1
Container: Bulk		Americas - 0
  • 1:$4.7300
STP38N65M5
DISTI # 45AC7721		STMicroelectronicsMOSFET, N-CH, 650V, 30A, TO-220AB,Transistor Polarity:N Channel,Continuous Drain Current Id:30A,Drain Source Voltage Vds:650V,On Resistance Rds(on):0.073ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V RoHS Compliant: Yes234
  • 1:$2.9700
  • 10:$2.9700
  • 25:$2.9700
  • 50:$2.9700
  • 100:$2.9700
  • 250:$2.9700
  • 500:$2.9700
STP38N65M5
DISTI # 511-STP38N65M5		STMicroelectronicsMOSFET N-Ch 650V 0.076 Ohm 30 A MDmesh M5
RoHS: Compliant		0
  • 1:$7.5800
  • 10:$6.8500
  • 25:$6.5300
  • 100:$5.6700
  • 250:$5.4200
  • 500:$4.9400
  • 1000:$4.3000
STP38N65M5STMicroelectronics 4000
    STP38N65M5
    DISTI # 7832974P    		STMicroelectronicsMOSFET N-CHANNEL 650V 30A TO-220, TU134
    • 200:£3.4800
    • 100:£3.7500
    • 50:£4.0200
    • 10:£4.3900
    STP38N65M5
    DISTI # 7832974    		STMicroelectronicsMOSFET N-CHANNEL 650V 30A TO-220, EA18
    • 200:£3.4800
    • 100:£3.7500
    • 50:£4.0200
    • 10:£4.3900
    • 1:£5.3600
    STP38N65M5
    DISTI # TMOSP12773    		STMicroelectronicsN-CH 650V 30A95mOhm TO220-3
    RoHS: Compliant    		Stock DE - 0Stock HK - 0Stock US - 0
    • 1000:$2.5500
    STP38N65M5
    DISTI # 2807296    		STMicroelectronicsMOSFET, N-CH, 650V, 30A, TO-220AB208
    • 500:£3.8500
    • 250:£4.2100
    • 100:£4.4000
    • 10:£5.0800
    • 1:£6.4300
    STP38N65M5
    DISTI # 2807296    		STMicroelectronicsMOSFET, N-CH, 650V, 30A, TO-220AB
    RoHS: Compliant    		166
    • 1000:$3.6700
    • 500:$3.9400
    • 250:$4.4200
    • 100:$4.9200
    • 10:$5.5500
    • 1:$6.3700
    STP38N65M5
    DISTI # XSKDRABS0019630    		STMicroelectronicsPower Field-EffectTransistor,17AI(D),650V,0.19ohm,1-Element,N-Channel,Silicon,Metal-oxideSemiconductor FET,TO-220AB
    RoHS: Compliant    		250 in Stock0 on Order
    • 250:$3.0900
    • 200:$3.3100
    Bild Teil # Beschreibung
    STP38N65M5

    Mfr.#: STP38N65M5

    OMO.#: OMO-STP38N65M5

    		 MOSFET N-Ch 650V 0.076 Ohm 30 A MDmesh M5
    STP38N65M5 38N65M5

    Mfr.#: STP38N65M5 38N65M5

    OMO.#: OMO-STP38N65M5-38N65M5-1190

    		 Neu und Original
    STP381

    Mfr.#: STP381

    OMO.#: OMO-STP381-1190

    		 Neu und Original
    STP38N06,38N06

    Mfr.#: STP38N06,38N06

    OMO.#: OMO-STP38N06-38N06-1190

    		 Neu und Original
    STP38N65M5

    Mfr.#: STP38N65M5

    OMO.#: OMO-STP38N65M5-STMICROELECTRONICS

    		 MOSFET N-CH 650V 30A TO-220
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    1000
    Menge eingeben:
    Der aktuelle Preis von STP38N65M5 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    7,58 $
    7,58 $
    10
    6,85 $
    68,50 $
    25
    6,53 $
    163,25 $
    100
    5,67 $
    567,00 $
    250
    5,42 $
    1 355,00 $
    500
    4,94 $
    2 470,00 $
    1000
    4,30 $
    4 300,00 $
    2000
    4,14 $
    8 280,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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