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SI7116DN-T1-GE3

SI7116DN-T1-GE3
Mfr. #:
SI7116DN-T1-GE3
Hersteller:
Vishay
Beschreibung:
MOSFET N-CH 40V 10.5A 1212-8
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SI7116DN-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
VISHAY
Produktkategorie
FETs - Einzeln
Serie
SI71xxDx
Verpackung
Spule
Teil-Aliasnamen
SI7116DN-GE3
Montageart
SMD/SMT
Handelsname
TrenchFET/PowerPAK
Paket-Koffer
PowerPAK-1212-8
Technologie
Si
Anzahl der Kanäle
1 Channel
Aufbau
Single
Transistor-Typ
1 N-Channel
Pd-Verlustleistung
3.8 W
Maximale-Betriebstemperatur
+ 150 C
Mindest-Betriebstemperatur
- 55 C
Abfallzeit
10 ns
Anstiegszeit
10 ns
Vgs-Gate-Source-Spannung
20 V
ID-Dauer-Drain-Strom
16.4 A
Vds-Drain-Source-Breakdown-Voltage
40 V
Rds-On-Drain-Source-Widerstand
7.8 mOhms
Transistor-Polarität
N-Kanal
Typische-Ausschaltverzögerungszeit
36 ns
Typische-Einschaltverzögerungszeit
10 ns
Kanal-Modus
Erweiterung
Tags
SI7116DN-T, SI7116D, SI7116, SI711, SI71, SI7
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 40 V 1.5 W 23 nC Silicon Surface Mount Mosfet - POWERPAK-1212-8
***ical
Trans MOSFET N-CH 40V 10.5A 8-Pin PowerPAK 1212 T/R
***ark
Transistor Polarity:n Channel; Continuous Drain Current Id:10.5A; Drain Source Voltage Vds:40V; On Resistance Rds(On):0.0065Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V; Power Dissipation Pd:1.5W; No. Of Pins:8Pins Rohs Compliant: Yes
Teil # Mfg. Beschreibung Aktie Preis
SI7116DN-T1-GE3
DISTI # SI7116DN-T1-GE3CT-ND		Vishay SiliconixMOSFET N-CH 40V 10.5A 1212-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		8988In Stock
  • 1000:$1.2764
  • 500:$1.5249
  • 100:$1.9390
  • 10:$2.3940
  • 1:$2.6500
SI7116DN-T1-GE3
DISTI # SI7116DN-T1-GE3DKR-ND		Vishay SiliconixMOSFET N-CH 40V 10.5A 1212-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		8988In Stock
  • 1000:$1.2764
  • 500:$1.5249
  • 100:$1.9390
  • 10:$2.3940
  • 1:$2.6500
SI7116DN-T1-GE3
DISTI # SI7116DN-T1-GE3TR-ND		Vishay SiliconixMOSFET N-CH 40V 10.5A 1212-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		6000In Stock
  • 3000:$1.1588
SI7116DN-T1-GE3
DISTI # SI7116DN-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 40V 10.5A 8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SI7116DN-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 3000:$0.5689
  • 6000:$0.5519
  • 12000:$0.5289
  • 18000:$0.5149
  • 30000:$0.5009
SI7116DN-T1-GE3Vishay IntertechnologiesTrans MOSFET N-CH 40V 10.5A 8-Pin PowerPAK 1212 T/R - Tape and Reel
RoHS: Compliant
Container: Reel		Americas - 0
    SI7116DN-T1-GE3
    DISTI # 84R8072    		Vishay IntertechnologiesN CHANNEL MOSFET,Transistor Polarity:N Channel,Continuous Drain Current Id:10.5A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.0065ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.5V,Power Dissipation Pd:1.5W RoHS Compliant: Yes0
    • 1000:$1.2800
    • 500:$1.3400
    • 250:$1.4300
    • 100:$1.5200
    • 50:$1.7500
    • 25:$1.9700
    • 1:$2.3700
    SI7116DN-T1-GE3.
    DISTI # 15AC0302    		Vishay IntertechnologiesTransistor Polarity:N Channel,Continuous Drain Current Id:10.5A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.0065ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.5V,Power Dissipation Pd:1.5W,No. of Pins:8Pins RoHS Compliant: Yes0
    • 1:$1.2700
    • 3000:$1.2700
    SI7116DN-T1-GE3
    DISTI # 781-SI7116DN-T1-GE3    		Vishay IntertechnologiesMOSFET 40V 16.4A 3.8W 7.8mohm @ 10V
    RoHS: Compliant    		2880
    • 1:$2.3600
    • 10:$1.9600
    • 100:$1.5200
    • 500:$1.3300
    SI7116DN-T1-GE3Vishay Intertechnologies 107
      SI7116DN-T1-GE3Vishay IntertechnologiesMOSFET 40V 16.4A 3.8W 7.8mohm @ 10VAmericas -
      • 3000:$0.5850
      • 6000:$0.5560
      • 12000:$0.5380
      • 18000:$0.5240
      Bild Teil # Beschreibung
      SI7116DN-T1-GE3

      Mfr.#: SI7116DN-T1-GE3

      OMO.#: OMO-SI7116DN-T1-GE3

      		 MOSFET 40V 16.4A 3.8W 7.8mohm @ 10V
      SI7116DN-T1-E3

      Mfr.#: SI7116DN-T1-E3

      OMO.#: OMO-SI7116DN-T1-E3

      		 MOSFET 40V 16.4A 3.8W 7.8mohm @ 10V
      SI7116DN-T1-E3-CUT TAPE

      Mfr.#: SI7116DN-T1-E3-CUT TAPE

      OMO.#: OMO-SI7116DN-T1-E3-CUT-TAPE-1190

      		 Neu und Original
      SI7116DN

      Mfr.#: SI7116DN

      OMO.#: OMO-SI7116DN-1190

      		 Neu und Original
      SI7116DN-T1-E3

      Mfr.#: SI7116DN-T1-E3

      OMO.#: OMO-SI7116DN-T1-E3-VISHAY

      		 MOSFET N-CH 40V 10.5A 1212-8
      SI7116DN-T1-GE3

      Mfr.#: SI7116DN-T1-GE3

      OMO.#: OMO-SI7116DN-T1-GE3-VISHAY

      		 MOSFET N-CH 40V 10.5A 1212-8
      SI7116DN-T1-GE3 7116

      Mfr.#: SI7116DN-T1-GE3 7116

      OMO.#: OMO-SI7116DN-T1-GE3-7116-1190

      		 Neu und Original
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      4500
      Menge eingeben:
      Der aktuelle Preis von SI7116DN-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      0,75 $
      0,75 $
      10
      0,71 $
      7,14 $
      100
      0,68 $
      67,62 $
      500
      0,64 $
      319,30 $
      1000
      0,60 $
      601,10 $
      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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