OMO ElectronicOMO Electronic
Expand menu
Hallo, melde dich anMein Konto
0 Wagen

IPP65R310CFDXKSA1

IPP65R310CFDXKSA1
Mfr. #:
IPP65R310CFDXKSA1
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET N-Ch 650V 11.4A TO220-3 CoolMOS CFD2
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPP65R310CFDXKSA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
IPP65R310CFDXKSA1 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-220-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
650 V
Id - Kontinuierlicher Drainstrom:
11.4 A
Rds On - Drain-Source-Widerstand:
280 mOhms
Vgs th - Gate-Source-Schwellenspannung:
3.5 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
41 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
104.2 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
CoolMOS
Verpackung:
Rohr
Höhe:
15.65 mm
Länge:
10 mm
Serie:
CoolMOS CFD2
Transistortyp:
1 N-Channel
Breite:
4.4 mm
Marke:
Infineon-Technologien
Abfallzeit:
7 ns
Produktart:
MOSFET
Anstiegszeit:
7.5 ns
Werkspackungsmenge:
500
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
45 ns
Typische Einschaltverzögerungszeit:
11 ns
Teil # Aliase:
IPP65R310CFD IPP65R31CFDXK SP000745028
Gewichtseinheit:
0.211644 oz
Tags
IPP65R31, IPP65R3, IPP65, IPP6, IPP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
In a Tube of 500, N-Channel MOSFET, 11 A, 700 V, 3-Pin TO-220 Infineon IPP65R310CFDXKSA1
***ure Electronics
Single N-Channel 650 V 310 mOhm 41 nC CoolMOS™ Power Mosfet - TO-220-3
***ical
Trans MOSFET N-CH 700V 11.4A Automotive 3-Pin(3+Tab) TO-220 Tube
***p One Stop Japan
Trans MOSFET N-CH 700V 11.4A 3-Pin(3+Tab) TO-220
***et
Trans MOSFET N-CH 650V 11.4A 3-Pin TO-220 Tube
***ronik
N-CH 650V 11,4A 280mOhm TO220-3 RoHSconf
***i-Key
LOW POWER_LEGACY
***ark
Mosfet, N-Ch, 650V, 11.4A, To-220-3; Transistor Polarity:n Channel; Continuous Drain Current Id:11.4A; Drain Source Voltage Vds:650V; On Resistance Rds(On):0.28Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 650V, 11.4A, TO-220-3; Transistor Polarity:N Channel; Continuous Drain Current Id:11.4A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.28ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:104.2W; Transistor Case Style:TO-220; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:CoolMOS CFD2 Series; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, CA-N, 650V, 11,4A, TO-220-3; Polarità Transistor:Canale N; Corrente Continua di Drain Id:11.4A; Tensione Drain Source Vds:650V; Resistenza di Attivazione Rds(on):0.28ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:4V; Dissipazione di Potenza Pd:104.2W; Modello Case Transistor:TO-220; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:CoolMOS CFD2 Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):-; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
650V CoolMOS CFD2 is Infineon's second generation of market leading high voltage CoolMOS MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation behavior and therefore better EMI behavior gives this product a clear advantage in comparison with competitor parts. | Summary of Features: 650V technology with integrated fast body diode; Limited voltage overshoot during hard commutation; Significant Q g reduction compared to 600V CFD technology; Tighter R DS(ON) max to R DS(on) typ window; Easy to design-in; Lower price compared to 600V CFD technology | Benefits: Low switching losses due to low Q rr at repetitive commutation on body diode; Self limiting di/dt and dv/dt; Low Q oss; Reduced turn on and turn of delay times; Outstanding CoolMOS quality | Target Applications: Telecom; Server; Solar; HID lamp ballast; LED lighting; eMobility
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
Teil # Mfg. Beschreibung Aktie Preis
IPP65R310CFDXKSA1
DISTI # V99:2348_06382968		Infineon Technologies AGTrans MOSFET N-CH 700V 11.4A 3-Pin(3+Tab) TO-220 Tube
RoHS: Compliant		500
  • 5000:$1.1057
  • 2500:$1.1232
  • 500:$1.3961
  • 100:$1.5939
  • 25:$1.7892
  • 10:$1.9880
  • 1:$2.5645
IPP65R310CFDXKSA1
DISTI # V36:1790_06382968		Infineon Technologies AGTrans MOSFET N-CH 700V 11.4A 3-Pin(3+Tab) TO-220 Tube
RoHS: Compliant		0
  • 500000:$0.9712
  • 250000:$0.9731
  • 50000:$1.1010
  • 5000:$1.3070
  • 500:$1.3400
IPP65R310CFDXKSA1
DISTI # IPP65R310CFDXKSA1-ND		Infineon Technologies AGMOSFET N-CH 650V 11.4A TO220
RoHS: Compliant
Min Qty: 1
Container: Tube		500In Stock
  • 5000:$1.0938
  • 2500:$1.1358
  • 500:$1.4724
  • 100:$1.7921
  • 25:$2.1036
  • 10:$2.2300
  • 1:$2.4800
IPP65R310CFDXKSA1
DISTI # 33639344		Infineon Technologies AGTrans MOSFET N-CH 700V 11.4A 3-Pin(3+Tab) TO-220 Tube
RoHS: Compliant		500
  • 6:$2.5645
IPP65R310CFDXK
DISTI # IPP65R310CFDXKSA1		Infineon Technologies AGTrans MOSFET N-CH 700V 11.4A 3-Pin(3+Tab) TO-220 - Rail/Tube (Alt: IPP65R310CFDXKSA1)
RoHS: Compliant
Min Qty: 500
Container: Tube		Americas - 0
  • 5000:$1.0179
  • 3000:$1.0359
  • 2000:$1.0719
  • 1000:$1.1119
  • 500:$1.1539
IPP65R310CFDXKSA1
DISTI # 13AC9087		Infineon Technologies AGMOSFET, N-CH, 650V, 11.4A, TO-220-3,Transistor Polarity:N Channel,Continuous Drain Current Id:11.4A,Drain Source Voltage Vds:650V,On Resistance Rds(on):0.28ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power RoHS Compliant: Yes0
  • 1000:$1.1700
  • 500:$1.4100
  • 100:$1.6200
  • 10:$2.0200
  • 1:$2.3700
IPP65R310CFD
DISTI # 726-IPP65R310CFD		Infineon Technologies AGMOSFET N-Ch 650V 11.4A TO220-3 CoolMOS CFD2
RoHS: Compliant		985
  • 1:$2.3500
  • 10:$2.0000
  • 100:$1.6000
  • 500:$1.4000
  • 1000:$1.1600
IPP65R310CFDXKSA1
DISTI # 726-IPP65R310CFDXKSA		Infineon Technologies AGMOSFET N-Ch 650V 11.4A TO220-3 CoolMOS CFD2
RoHS: Compliant		994
  • 1:$2.3500
  • 10:$2.0000
  • 100:$1.6000
  • 500:$1.4000
  • 1000:$1.1600
IPP65R310CFDXKSA1
DISTI # 8576943		Infineon Technologies AGMOSFET N-CH 700V 11A COOLMOS CFD2 TO-220, TU500
  • 5000:£0.9070
  • 2500:£0.9260
  • 500:£0.9450
IPP65R310CFDXKSA1
DISTI # 2726073		Infineon Technologies AGMOSFET, N-CH, 650V, 11.4A, TO-220-30
  • 500:£1.0800
  • 250:£1.1600
  • 100:£1.2300
  • 10:£1.5500
  • 1:£2.0500
IPP65R310CFDXKSA1
DISTI # 2726073		Infineon Technologies AGMOSFET, N-CH, 650V, 11.4A, TO-220-3
RoHS: Compliant		0
  • 5000:$1.7000
  • 2500:$1.7200
  • 500:$2.2200
  • 100:$2.7100
  • 25:$3.1700
  • 10:$3.3700
  • 1:$3.7400
Bild Teil # Beschreibung
MIC5205-5.0YM5-TR

Mfr.#: MIC5205-5.0YM5-TR

OMO.#: OMO-MIC5205-5-0YM5-TR

 LDO Voltage Regulators 150mA 1% Low Noise LDO
MIC5205-5.0YM5-TR

Mfr.#: MIC5205-5.0YM5-TR

OMO.#: OMO-MIC5205-5-0YM5-TR-MICROCHIP-TECHNOLOGY

 IC REG LINEAR 5V 150MA SOT23-5
Verfügbarkeit
Aktie:
994
Auf Bestellung:
2977
Menge eingeben:
Der aktuelle Preis von IPP65R310CFDXKSA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
2,35 $
2,35 $
10
2,00 $
20,00 $
100
1,60 $
160,00 $
500
1,40 $
700,00 $
1000
1,16 $
1 160,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
Beginnen mit
Neueste Produkte
More Newest Products
Top