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Teil # | Mfg. | Beschreibung | Aktie | Preis |
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1N5402G R0G DISTI # V36:1790_16934747 | Taiwan Semiconductor | 3A,200V,GLASS PASSIVATED RECTIFIER | 0 |
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1N5402G R0G DISTI # 1N5402GR0G-ND | Taiwan Semiconductor Manufacturing Company Limited | DIODE GEN PURP 200V 3A DO201AD Min Qty: 1250 Container: Tape & Reel (TR) | 3750In Stock |
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1N5402G R0 DISTI # 1N5402G R0 | Taiwan Semiconductor | - Tape and Reel (Alt: 1N5402G R0) RoHS: Compliant Min Qty: 3750 Container: Reel | Americas - 0 |
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1N5402G R0 DISTI # 99AC4626 | Taiwan Semiconductor | STANDARD RECOVERY RECT, 3A, 200V, AXIAL,Repetitive Reverse Voltage Vrrm Max:200V,Forward Current If(AV):3A,Diode Configuration:Single,Forward Voltage VF Max:1V,Reverse Recovery Time trr Max:-,Forward Surge Current Ifsm RoHS Compliant: Yes RoHS: Compliant | 0 |
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1N5402G R0 DISTI # 2677328 | Taiwan Semiconductor | STANDARD RECOVERY RECT, 3A, 200V, AXIAL RoHS: Compliant | 0 |
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1N5402G R0 DISTI # 2677328 | Taiwan Semiconductor | STANDARD RECOVERY RECT, 3A, 200V, AXIAL RoHS: Compliant | 0 |
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1N5402G R0 DISTI # 1N5402G | Taiwan Semiconductor | Si-Rectifier 200V 3A DO201AD RoHS: Compliant | 3000 |
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Bild | Teil # | Beschreibung |
---|---|---|
Mfr.#: 1N5404T-G OMO.#: OMO-1N5404T-G |
Rectifiers 3A 400V Rectifier Diode | |
Mfr.#: 1N5408-E3/51 OMO.#: OMO-1N5408-E3-51-VISHAY |
DIODE GEN PURP 1KV 3A DO201AD | |
Mfr.#: 1N5407G A0G |
1N5407G A0G | |
Mfr.#: 1N5401+ OMO.#: OMO-1N5401--1190 |
RECTIFIER, SINGLE, 100V, 3A, DO-201AD | |
Mfr.#: 1N5404-E3 OMO.#: OMO-1N5404-E3-1190 |
1N5404-E3 | |
Mfr.#: 1N5401TR OMO.#: OMO-1N5401TR-1190 |
Neu und Original | |
Mfr.#: 1N5408G-04 XO OMO.#: OMO-1N5408G-04-XO-1190 |
Neu und Original | |
Mfr.#: 1N5407T-G OMO.#: OMO-1N5407T-G-109 |
Diodes - General Purpose, Power, Switching VRRM=800V, IAV=3A | |
Mfr.#: 1N5401G-T OMO.#: OMO-1N5401G-T-DIODES |
DIODE GEN PURP 100V 3A AXIAL | |
Mfr.#: 1N5404RLG-CUT TAPE OMO.#: OMO-1N5404RLG-CUT-TAPE-1190 |
Neu und Original |